Diode Semiconductor Korea BYW29-100 --- BYW29-200 VOLTAGE RANGE: 100 --- 200 V CURRENT: 8.0 A SUPER FAST RECTIFIERS FEATURES TO-220AC 2.8± 0.1 Low cost Glass passivated junction chips 4.5± 0.2 10.2± 0.2 1.4± 0.2 Low leakage φ 3.8± 0.15 19.0± 0.5 High current capability Easily cleaned with alcohol,Isopropanol and sim ilar solvents 8.9± 0.2 Low forward voltage drop PIN 2 1 MECHANICAL DATA 3.5± 0.3 Case: JEDEC TO-220AC Term inals: Solderable per MIL- STD-202,Method 208 13.8± 0.5 2.6± 0.2 0.9± 0.1 Polarity: Color band denotes cathode 5.0± 0.1 Weight:0.069 ounces,1.96 grams Mounting position: Any 0.5± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYW29 -100 BYW29 -150 BYW29 -200 UNITS Maximum recurrent peak reverse voltage V RRM 100 150 200 V Maximum RMS voltage V RMS 70 105 140 V Maximum DC blocking voltage V DC 100 150 200 V Maximum average forw ard rectif ied current 9.5mm lead length, @TC =120 IF(AV) 8.0 A IFSM 80 A VF 1.05 V Peak forw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=8.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 IR 10 600 Maximum reverse recovery time (Note1) trr 25 ns Typical junction capacitance (Note1) CJ 45 pF Typical thermal resistance (Note2) RθJC 3.0 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to case. A /W www.diode.kr Diode Semiconductor Korea BYW29-100 - - - BYW29-200 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N 1. 50 N 1. +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1 cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . FIG.3 -- TYPICAL JUNCTION CAPACITANCE 1000 100 JUNCTION CAPACITANCE,pF 1000 TJ =25 Pulse Width=300µS 10 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC SET TIME BASE FOR 10 ns/cm 4.0 1.0 0.1 .7 .8 .9 1.0 1.1 1.2 1.3 1.4 300 200 100 40 TJ=25 f=1MHz 20 10 .1 INSTANTANEOUS FORWARD VOLTAGE,VOLTS .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS FIG.4 -- PEAK FORWARD SURGE CURRENT FIG.5 -- FORWARD DERATING CURVE 48 TJ=125 10ms Single Half Sine-Wave 32 16 0 1 2 4 10 20 40 NUMBER OF CYCLES AT 50Hz 100 AVERAGE FORWARD CURRENT AMPERES 54 AMPERES PEAK FORWARD SURGE CURRENT 80 8.0 5.4 4.8 3.2 Single Phase Half Wave 50HZ Resistive or Inductive Load 1.6 0 25 50 75 100 125 150 175 200 CASE TEMPERATURE, www.diode.kr