DCR3790B42 Phase Control Thyristor DS5809-2 April 2013 (LN30260) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 3790A 53500A 1500V/µs 400A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR3790B42 DCR3790B40 DCR3790B35 DCR3790B30 Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3500 3000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: B (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3790B42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 3790 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 5953 A Continuous (direct) on-state current - 5330 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 53.5 kA VR = 0 14.31 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.007 °C/W Single side cooled Anode DC - 0.0116 °C/W Cathode DC - 0.0181 °C/W Double side - 0.0014 °C/W - 0.0028 °C/W - 125 °C Clamping force 70.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 63.0 77.0 kN 2/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 400 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 700A to 4100A at Tcase = 125°C - 0.83 V Threshold voltage – High level 4100A to 12000A at Tcase = 125°C - 1.0 V On-state slope resistance – Low level 700A to 4100A at Tcase = 125°C - 0.1688 m On-state slope resistance – High level 4100A to 12000A at Tcase = 125°C - 0.1263 m TBD TBD µs 250 500 µs 1500 4500 µC Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES Instantaneous on-state current TI - (A) 7000 min 125°C max 125°C min 25°C max 25°C 6000 5000 4000 3000 2000 1000 0 0.5 1.0 1.5 2.0 Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.348967 B = 0.066851 C = 0.000102 D = 0.003788 these values are valid for Tj = 125°C for IT 500A to 10000A 4/10 www.dynexsemi.com DCR3790B42 11 130 10 120 o Maximum case temperature, Tcase ( C ) Mean power dissipation - (kW) SEMICONDUCTOR 9 8 7 6 5 4 180 3 120 90 2 60 1 30 90 100 60 90 30 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 120 180 110 120 12 90 11 100 60 90 30 80 70 60 50 40 30 20 10 Mean power dissipation - (kW) o 120 110 0 Maximum heatsink temperature, THeatsink - ( C ) 180 10 9 8 7 d.c. 6 180 5 120 4 90 3 60 2 30 1 0 0 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 5000 6000 7000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR3790B42 130 130 Maximum heatsik temperature Theatsink - ( C) d.c. 180 120 90 60 30 120 110 100 90 80 o T - (°C) Maximum permissible case temperature ,case SEMICONDUCTOR 70 60 50 40 30 20 10 0 d.c. 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 7000 0 Mean on-state current, IT(AV) - (A) 1000 2000 3000 4000 5000 6000 7000 Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Thermal Impedance, Zth(j-c) ( °C/kW) 20 18 16 Double Side Cooling Double side cooled Anode Side Cooling Anode side cooled Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) Cathode Sided Cooling Cathode side cooled Ri (°C/kW) Ti (s) 14 Zth = [Ri x ( 1-exp. (t/ti))] 1 0.502 2 1.333 3 2.9559 4 2.2335 0.0137081 0.0548877 0.3311925 1.6905 1.3035 3.138 1.1859 5.9136 0.0251065 0.2410256 1.0806 11.002 1.2616 2.6216 13.3603 0.8304 0.0245837 0.2005035 5.7854 16.765 [1] 12 10 Rth(j-c) Conduction 8 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 6 4 2 0 0.001 0.01 0.1 1 10 100 ° 180 120 90 60 30 15 Double side cooling Zth (z) sine. rect. 0.70 0.48 0.80 0.68 0.90 0.78 1.00 0.89 1.07 1.01 1.10 1.07 ° 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. rect. 0.67 0.47 0.77 0.66 0.87 0.75 0.95 0.86 1.02 0.96 1.05 1.02 Cathode Sided Cooling Zth (z) sine. rect. ° 180 0.67 0.47 120 0.77 0.66 90 0.87 0.76 60 0.95 0.86 30 1.02 0.96 15 1.05 1.02 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 30000 800 Max QS = 5404.7*(di/dt)0.4733 Conditions: Tj = 125ºC, VRpeak ~ 2500V, VRM ~ 1700V snubber as required to control reverse voltages 700 I - (A) Reverse recovery current,RR Stored Charge, QS - (uC) 25000 20000 Min QS = 2246.2*(di/dt)0.5657 15000 10000 Conditions: Tj = 125ºC, VRpeak ~ 2500V, VRM ~ 1700V snubber as required to control reverse voltages 5000 600 IRR max = 62.4*(di/dt)0.7284 500 400 300 IRR min = 36.417*(di/dt)0.8041 200 100 0 0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR5050B22 DCR4590B28 DCR3790B42 DCR3480B52 DCR2880B65 DCR2400B85 Maximum Minimum Thickness Thickness (mm) (mm) 34.565 34.115 34.64 34.19 34.87 34.42 34.99 34.54 35.25 34.8 35.61 35.16 Ø120.0 MAX. Ø84.6 NOM. Ø1.5 CATHODE GATE ANODE Ø84.6 NOM. FOR PACKAGE HEIGHT SEE TABLE Clamping force: 76kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: B Fig.16 Package outline 9/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Provisional Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Some initial development work has been performed. The datasheet represents a view of the end product based on very limited information. Certain details will change. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Dynex Semiconductor Ltd. CUSTOMER SERVICE Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Technical Documentation – Not for resale. 10/10 www.dynexsemi.com