HAT2187WP Silicon N Channel Power MOS FET Power Switching REJ03G0535-0500 Rev.5.00 Sep.02,2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.5.00, Sep.02,2005, page 1 of 6 Symbol VDSS VGSS ID ID (pulse)Note1 IDR Ratings 200 ±30 17 34 17 Unit V V A A A IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 34 17 19.2 30 4.17 150 –55 to +150 A A mJ W °C/W °C °C HAT2187WP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00, Sep.02,2005, page 2 of 6 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 200 — — 3.0 8 — Typ — — — — 14 0.084 Max — 1 ±0.1 4.5 — 0.094 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 1200 220 19 31 37 69 8 26 7 10 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.9 130 1.4 — V ns Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 8.5 A, VDS = 10 V Note4 ID = 8.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 8.5 A VGS = 10 V RL = 11.8 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 17 A IF = 17 A, VGS = 0 Note4 IF = 17 A, VGS = 0 diF/dt = 100 A/µs HAT2187WP Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 ID (A) 30 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 50 100 150 Case Temperature 1m 10 area is limited by 0.1 RDS(on) 0.01 5.75 V 8 5.5 V 5.25 V 4 6 Drain to Source Voltage 8 12 8 4 3 2 ID = 17 A 8.5 A 5A 0 4 8 12 Gate to Source Voltage Rev.5.00, Sep.02,2005, page 3 of 6 16 20 VGS (V) 2 6 4 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 25°C −25°C Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 4 Tc = 75°C 0 10 VDS (V) 1 VDS (V) 16 VGS = 5 V 2 1000 VDS = 10 V Pulse Test 12 0 300 20 6V 4 100 30 Typical Transfer Characteristics ID (A) 16 DC Operation (Tc = 25°C) Drain to Source Voltage Pulse Test 7V PW = 10 ms (1shot) 0.03 Tc (°C) Drain Current ID (A) Drain Current 10 V µs s 1 0.3 Operation in this Typical Output Characteristics 20 0µ 3 0.003 Ta = 25°C 0.001 1 3 10 200 10 10 s 1 VGS = 10 V 0.5 0.2 0.1 0.05 0.02 Pulse Test 0.01 1 3 10 30 Drain Current 100 300 ID (A) 1000 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.2 VGS = 10 V Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) HAT2187WP Pulse Test 8.5 A 0.16 5A ID = 17 A 0.12 0.08 0.04 0 −25 0 25 50 75 100 Case Temperature 125 150 100 30 Tc = −25°C 10 75°C 3 25°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1000 10000 500 3000 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 100 ID (A) VGS = 0 f = 1 MHz Ciss 1000 300 Coss 100 30 Crss 10 1 1 3 10 30 100 300 1000 Reverse Drain Current 0 IDR (A) 50 12 8 VDS 100 4 VDD = 160 V 100 V 50 V 0 0 8 16 Gate Charge Rev.5.00, Sep.02,2005, page 4 of 6 24 32 Qg (nC) 40 1000 tf Switching Time t (ns) VDD = 50 V 100 V 160 V 300 200 VGS VGS (V) 16 ID = 17 A 150 VDS (V) Switching Characteristics Gate to Source Voltage 400 100 Drain to Source Voltage Dynamic Input Characteristics VDS (V) 30 3 1 Drain to Source Voltage 10 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) 3 Drain Current Tc (°C) Body-Drain Diode Reverse Recovery Time 2 1 VGS = 10 V, VDD = 100 V PW = 5 µs, duty < 1 % RG = 10 Ω td(off) 100 td(on) 10 tr 1 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2187WP Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 20 16 12 10 V 8 5V VGS = 0, -5 V 4 0.4 0.8 1.2 Source to Drain Voltage 1.6 ID = 10 mA 4 1 mA 3 0.1 mA 2 1 Pulse Test 0 VDS = 10 V 0 -25 2.0 VSD (V) 0 25 50 75 100 125 150 Case Temperature Tc (°C) 3 γ s (t) Normalized Transient Thermal Impedance Normalized Transient Thermal Impedance vs. Pulse Width Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 4.17°C/ W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 0.01 10 µ 1s t ho pu D= lse PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 10 Ω Vin 10 V Vin Vout VDD = 100 V 10% 10% 90% td(on) Rev.5.00, Sep.02,2005, page 5 of 6 10% tr 90% td(off) tf HAT2187WP Package Dimensions RENESAS Code Package Name MASS[Typ.] PWSN0008DA-A WPAK 0.085g Unit: mm 0.5 ± 0.15 JEITA Package Code 0.8Max 5.1 ± 0.2 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Ordering Information Part Name HAT2187WP-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00, Sep.02,2005, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0