LRC M1MA152WALT1G Common anode silicon dual switching diode Datasheet

LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SOT-23 package which is designed for low
power surface mount applications.
• Fast t rr , < 10 ns
M1MA151WALT1
M1MA152WALT1
SOT-23 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
• Low C D , < 15 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2WALT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WALT3 to order the 13 inch/10,000 unit reel.
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
3
ORDERING INFORMATION
Device
Package
2
Shipping
M1MA151WALT1G
SOT–23
3000/Tape & Reel
M1MA152WALT1G
M1MA151WALT1
M1MA151WALT1
SOT–23
SOT–23
SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
1
SOT-23
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
ANODE
ANODE
1
MAXIMUM RATINGS (T A = 25°C)
Symbol
M1MA151WALT1
VR
M1MA152WALT1
M1MA151WALT1
V RM
M1MA152WALT1
Single
IF
Dual
Single
I FM
Dual
Single
I FSM (1)
Value
40
80
40
80
100
150
225
340
500
Dual
Unit
Vdc
2
3
CATHODE
Vdc
mAdc
mAdc
mAdc
750
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbo
PD
TJ
T stg
lMax
200
150
-55 to +150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current M1MA151WALT1
IR
M1MA152WALT1
Forward Voltage
VF
Reverse Breakdown Voltage
M1MA151WALT1
VR
M1MA152WALT1
Diode Capacitance
CD
Reverse Recovery Time
t rr (2)
Condition
V R = 35 V
V R = 75 V
I F = 100 mA
I R = 100 µA
Min
—
—
—
40
80
V R = 0, f = 1.0 MHz
—
I F = 10 mA, V R = 6.0 V, —
R L = 100Ω, I rr = 0.1 I R
Max
0.1
0.1
1.2
—
—
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
1. t = 1 SEC
2. t rr Test Circuit
M1MA151WALT1-1/3
LESHAN RADIO COMPANY, LTD.
M1MA151WALT1 M1MA152WALT1
OUTPUT PULSE
INPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
t
t
r
p
t
t
I
rr
F
t
10%
R
L
90%
V
R
t p = 2 µs
t r = 0.35 ns
I rr = 0.1 I
R
I F = 10 mA
V R= 6 V
R L = 100 Ω
DEVICE MARKING—EXAMPLE
Marking Symbol
Type No.
Symbol
151WA 152WA
MN
MO
MN X
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
M1MA151WALT1-2/3
LESHAN RADIO COMPANY, LTD.
M1MA151WALT1 M1MA152WALT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
M1MA151WALT1-3/3
Similar pages