Sanyo FC154 High-speed switching, high-frequency amp application Datasheet

Ordering number:EN5099
FC154
NPN/PNP Epitaxial Planar Silicon Transistor
High-Speed Switching,
High-Frequency Amp Applications
Features
Package Dimensions
· Composite type with NPN transistor and a PNP
transistor contained in the conventional CP package,
improving the mounting efficiency greatly.
· The FC154 is formed with two chips, being equivalent to the 2SC4270 and the other the 2SA1699,
placed in one package.
unit:mm
2104A
[FC154]
Electrical Connection
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR1 (NPN Tr)]
Collector-to-Base Voltage
VCBO
25
V
Collector-to-Emitter Voltage
VCEO
VEBO
15
V
3
V
Collector Current
IC
50
mA
Collector Dissipation
PC
200
mW
VCBO
VCEO
–20
V
–15
V
VEBO
IC
–3
V
–50
mA
PC
200
mW
Total Dissipation
PT
300
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Emitter-to-Base Voltage
[TR2 (PNPTr)]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
[Common Ratings]
Marking:154
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO (KOTO) TA-0144 No.5099-1/7
FC154
Continued from Preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
[TR1 (NPN Tr)]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
VCB=20V, IE=0
VEB=2V, IC=0
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VCE=10V, IC=5mA
VCE=10V, IC=10mA
Output Capacitance
Cob
VCB=10V, f=1MHz
0.7
Power Gain
PG
12
dB
Noise Figure
NF
VCE=10V, IC=10mA, f=0.9GHz
VCE=10V, IC=3mA, f=0.9GHz
3.0
dB
60
1.5
0.1
µA
10
µA
200
3.0
GHz
1.0
pF
[TR2 (PNPTr)]
Collector Cutoff Current
ICBO
VCB=–15V, IE=0
–0.1
µA
Emitter Cutoff Current
IEBO
–0.1
µA
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VEB=–2V, IC=0
VCE=–10V, IC=–5mA
Output Capacitance
Cob
Forward Transfer Gain
Noise Figure
| S2le | 2
NF
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
VCE=–10V, IC=–5mA, f=0.9GHz
VCE=–10V, IC=–3mA, f=0.9GHz
20
1.5
100
3.0
1.0
5
GHz
1.5
pF
dB
2.0
dB
PG, NF Test Circuit
No.5099-2/7
FC154
No.5099-3/7
FC154
No.5099-4/7
FC154
No.5099-5/7
FC154
No.5099-6/7
FC154
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5099-7/7
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