NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. http://onsemi.com V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 m @ 10 V 2.0 A* *Max current limit value is dependent on input condition. Drain Features • • • • • • • Gate Input Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection RG Overvoltage Protection MPWR ESD Protection Temperature Limit Current Limit Current Sense Applications • Lighting • Solenoids • Small Motors Source MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit VDSS 42 V VDGR 42 V Gate−to−Source Voltage VGS 14 V Continuous Drain Current ID Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 M) Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 3) Internally Limited PD 1.1 1.7 8.9 W Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 ) EAS 150 mJ THERMAL RESISTANCE RATINGS Rating Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2) Junction−to−Tab − Steady State (Note 3) Symbol Value Unit RJA RJA RJT 114 72 14 °C/W 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). 3. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 5 1 1 GATE 2 DRAIN ONLYM 5002N Rating SOT−223 CASE 318E Style 3 4 DRAIN 3 SOURCE (Top View) 5002N L YM = Specific Device Code = Location Code = Year, Month ORDERING INFORMATION Device Package Shipping† NIF5002NT1 SOT−223 1000/Tape & Reel NIF5002NT3 SOT−223 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: NIF5002N/D NIF5002N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit TJ = 25°C 42 46 55 V TJ = 150°C 40 45 55 TJ = 25°C 0.25 4.0 TJ = 150°C 1.1 20 50 100 A 1.8 2.2 V OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) Zero Gate Voltage Drain Current Gate Input Current V((BR)DSS ) IDSS VGS = 0 V V, ID = 10 mA VGS = 0 V V, VDS = 32 V IGSSF VDS = 0 V, VGS = 5.0 V VGS(th) VGS = VDS, ID = 150 A A ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(th)/TJ Static Drain−to−Source On−Resistance RDS(on) ( ) VGS = 10 V V, ID = 1 1.7 7A VGS = 5 5.0 0V V, ID = 1 1.7 7A VGS = 5 5.0 0V V, ID = 0 0.5 5A Source−Drain Forward On Voltage 1.3 4.0 6.0 −mV/°C TJ = 25°C 165 200 m TJ = 150°C 305 400 TJ = 25°C 195 230 TJ = 150°C 360 460 TJ = 25°C 190 230 TJ = 150°C 350 460 VSD VGS = 0 V, IS = 7.0 A 1.0 V Turn−on Time td(on) 20 30 Turn−off Time td(off) VGS = 10 V, VDD = 12 V, ID = 2.5 2 5 A, A RL = 4 4.7 7 , (10% Vin to 90% ID) 65 100 Slew Rate On dVDS/dton RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V, 70% to 50% 1.2 Slew−Rate Off dVDS/dtoff RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V, 50% to 70% 0.5 SWITCHING CHARACTERISTICS s Vs SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit ILIM VDS = 10 V V, VGS = 5 5.0 0V VDS = 10 V V, VGS = 10 V TJ = 25°C 3.1 4.7 6.3 TJ = 150°C 2.0 3.2 4.3 TJ = 25°C 3.8 5.7 7.6 2.8 4.3 5.7 Temperature Limit (Turn−off) TLIM(off) VGS = 5.0 V 150 175 200 Temperature Limit (Circuit Reset) TLIM(on) VGS = 5.0 V 135 160 185 Temperature Limit (Turn−off) TLIM(off) VGS = 10 V 150 165 185 Temperature Limit (Circuit Reset) TLIM(on) VGS = 10 V 135 150 170 TJ = 150°C A °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability ESD Human Body Model (HBM) 4000 Machine Model (MM) 400 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. http://onsemi.com 2 V NIF5002N TYPICAL PERFORMANCE CURVES ID, DRAIN CURRENT (AMPS) 8V 4 6V 5V 4V 3.8 V 3 3.6 V 7V 5 3.4 V 2 3.2 V 3.0 V 2.8 V 2.6 V 1 0 2 1 3 2 100°C 1 4 3 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2 3 1.5 3.5 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 1.7 A TJ = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 3 5 4 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 4 0.3 TJ = 25°C 0.25 VGS = 5 V 0.2 0.15 VGS = 10 V 0.1 0.05 0 2 3 4 5 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 10000 2.5 ID = 1.7 A VGS = 5 V VGS = 0 V 2 1000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 25°C 1 1.0 2 VDS ≥ 10 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (AMPS) 9V 6 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 4 TJ = 25°C 10 V 7 1.5 1 TJ = 150°C 100 TJ = 100°C 10 0.5 0 −50 −25 0 25 50 75 100 125 150 1 10 20 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 40 NIF5002N TYPICAL PERFORMANCE CURVES 10 VGS = 0 V TJ = 25°C ID, DRAIN CURRENT (AMPS) IS, SOURCE CURRENT (AMPS) 10 1 0.1 0.01 0.4 0.5 0.6 0.7 0.8 0.9 VGS = 20 V SINGLE PULSE TC = 25°C 1.0 10 ms 0.1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 1 ms 1.0 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Maximum Rated Forward Biased Safe Operating Area Figure 7. Diode Forward Voltage vs. Current r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1.0E−03 0.01 SINGLE PULSE 1.0E−02 1.0E−01 1.0E+00 t, TIME (s) Figure 9. Thermal Response http://onsemi.com 4 1.0E+01 1.0E+02 1.0E+03 NIF5002N PACKAGE DIMENSIONS SOT−223 CASE 318E−04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) H M K http://onsemi.com 5 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NIF5002N HDPlus is registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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