Diode Semiconductor Korea MUR105 --- MUR160 VOLTAGE RANGE: 50 --- 600 V CURRENT: 1.0 A SUPER FAST RECT IFIERS FEATURES Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents DO - 41 The plas tic m aterial carries U/L recognition 94V-0 MECHANICAL DATA Cas e:JEDEC DO--41,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces ,0.34 gram s Mounting pos ition: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. MUR MUR MUR MUR MUR 105 110 115 120 130 MUR MUR MUR UNITS 140 150 160 Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage V R MS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 1.0 A IFSM 35.0 A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 1.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF IR 0.875 1.25 2.0 5.0 50 150 25 50 Maximum reverse recovery time (Note1) t rr Typical junction capacitance (Note2) CJ 22 Typical thermal resistance (Note3) Rθ JA 50 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range V A ns pF /W N OTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH z and applied rev erse v oltage of 4.1V D C . 3. Therm al res istanc e f rom junction to am bient. www.diode.kr Diode Semiconductor Korea MUR105 --- MUR160 FIG.2 -- FORWARD DRATING CURVE 1.5 20 AVERAGE FORWARD CURRENT AMPERES M UR130-M UR150 10 6 4 2 M UR105-M UR120 M UR160 1 0.6 0.4 0.2 0.1 0.06 0.04 T J =25 Pulse W idth=300 µ s 0.02 0.01 0.5 0.7 0.9 1.1 1.3 1.5 1.25 1.0 0.75 0.5 0.25 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 25 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 50 75 100 125 150 175 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE. pF INSTANTANEOUS FORWARD CURRENT AMPERES FIG.1 -- TYPICAL FORWARD CHARACTERISTICS 100 60 40 20 10 6 4 2 TJ =25 f=1.0MHz 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr MUR105 --- MUR160 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 40 20 TA=150℃ 10 4 2 TA=100℃ 1 .4 .2 .1 TA=25℃ .04 .02 .01 20 40 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 100 MICRO AMPERES INSTANTANEOUS REVERSE LEAKAGE CURRENT Diode Semiconductor Korea 60 80 60 50 8.3ms Single Half Sine-Wave 40 30 20 10 0 1 2 4 10 20 40 100 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, % NUMBER OF CYCLES AT 60Hz FIG.6 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) PULSE GENERATOR (NOTE2) 1 NONINDUCTIVE 0 -0.25A OSCILLOSCOPE (NOTE 1) -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm www.diode.kr