ETL GS411SD The gs411sd is designed for low power rectification Datasheet

CORPORATION
G S 4 11 S D
Description
ISSUED DATE :2005/12/20
REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 5 A
The GS411SD is designed for low power rectification.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at TA = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRMS
28
V
Maximum DC Blocking Voltage
VDC
20
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
3.0
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
20
pF
Maximum Average Forward Rectified Current
Io
0.5
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25
Parameter
Reverse Breakdown Voltage
unless otherwise noted)
Symbol
Min.
Typ.
V(BR)R
40
-
Maximum Instantaneous Forward Voltage
VF
Maximum Average Reverse Current
IR
Max.
Unit
-
-
V
-
300
-
-
500
-
-
30
mV
uA
Test Conditions
IR=100 A
IF1=10mA
IF2=500mA
VR=10V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
GS411SD
Page: 1/2
CORPORATION
ISSUED DATE :2005/12/20
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GS411SD
Page: 2/2
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