MPSA55 -0.5A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Amplification. 1Emitter 2Base 3Collector Collector 3 2 REF. Base A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Rating Unit Collector to Base Voltage Collector to Emitter Voltage Parameter VCBO VCEO -60 -60 V V Emitter to Base Voltage Collector Current - Continuous VEBO IC -4 -0.5 V A Collector Power Dissipation Thermal Resistance From Junction To Ambient PC RθJA 625 200 mW °C / W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage V(BR)CBO V(BR)CEO -60 -60 - - V V IC= -0.1mA, IE=0 IC= -1mA, IB=0 Emitter to Base Breakdown Voltage Collector Cut-Off Current V(BR)EBO ICBO -4 - - -0.1 V µA IE= -0.1mA, IC=0 VCB= -60V, IE=0 Collector cut-off current Emitter Cut-Off Current ICEO IEBO - - -0.1 -0.1 µA µA VCE= -60V, IB=0 VEB= -4V, IC=0 DC Current Gain hFE 100 100 - - VCE(sat) VBE - - -0.25 -1.2 V V fT 50 - - MHz Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency http://www.SeCoSGmbH.com/ 16-Nov-2012 Rev. A Test Condition VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -100mA, IB= -10mA IC= -100mA, VCE= -1V VCE= -1V, IC= -100mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 1