LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS(ON) (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ❏ ESD gate protection The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. ❏ Free from secondary breakdown ❏ Low power drive requirement The LND2 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. ❏ Ease of paralleling ❏ Excellent thermal stability ❏ Integral source-drain diode ❏ High input impedance and low CISS Applications ❏ Solid state relays Package Options ❏ Normally-on switches ❏ Converters ❏ Power supply circuits ❏ Constant current sources ❏ Input protection circuits Source Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. ±20V -55°C to +150°C 300°C Gate Drain TO-236AB (SOT-23) top view Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, LND250 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @TA = 25°C °C/W °C/W θja IDR IDRM* 13mA 30mA 0.36W 200 350 13mA 30mA TO-236AB θjc * ID (continuous) is limited by max rated Tf. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Source Breakdown Voltage 500 VGS(OFF) Gate-to-Source OFF Voltage -1.0 Typ Max Unit Conditions V VGS = -10V, ID = 1.0mA -3.0 V VDS = 25V, ID = 100nA ∆VGS(OFF) Change in VGS(OFF) with Temperature 5.0 mV/°C VDS = 25V, ID = 100nA IGSS Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 100 nA VGS = -10V, VDS = 450V 100 µA VGS = -10V, VDS = 0.8V max rating TA =125°C 3.0 mA VGS = 0V, VDS = 25V 1K Ω VGS = 0V, ID = 0.5mA 1.2 %/°C VGS = 0V, ID = 0.5mA Ω VGS = 0V, ID = 1.0mA IDSS Saturated Drain-to-Source Current 1.0 RDS(ON) Static Drain-to-Source ON-State Resistance 850 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance 1.0 2.0 m CISS Input Capacitance 7.5 10 COSS Output Capacitance 2.0 3.5 CRSS Reverse Transfer Capacitance 0.5 1.0 td(ON) Turn-ON Delay Time 0.09 tr Rise Time 0.45 td(OFF) Turn-OFF Delay Time 0.1 tf Fall Time 1.3 VSD Diode Forward Voltage Drop trr Reverse Recovery Time pF VGS = -10V, VDS = 25V f = 1MHz VDD = 25V, ID = 1.0mA, RGEN = 25Ω µs 0.9 200 V VGS = -10V, ISD = 1.0mA ns VGS = -10V, ISD = 1.0mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) VDD td(OFF) RL OUTPUT Rgen t(OFF) tr VDD tF D.U.T. INPUT 10% 10% OUTPUT 0V 90% 90% 12/13/010 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com