NSR0620P2T5G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0620P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features 20 V SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop − 350 mV @ 100 mA Low Reverse Current − 2.0 mA @ 10 V Continuous Forward Current − 500 mA Power Dissipation with Minimum Trace − 190 mW Very High Switching Speed − 4.0 ns @ 10 mA Low Capacitance − 12 pF @ 1.0 V This is a Pb−Free Device 1 CATHODE Typical Applications • • • • • 1 SOD−923 CASE 514AB PLASTIC Symbol Value Unit Reverse Voltage VR 20 Vdc Forward Continuous Current (DC) IF 500 mA IFSM 1.0 A ESD Rating: Human Body Model Machine Model 2 ORDERING INFORMATION MAXIMUM RATINGS Non−Repetitive Peak Forward Surge Current 1 MG G F = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Rating MARKING DIAGRAM 2 LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection Markets • • • • • 2 ANODE F • • • • • • • ESD Device Package Shipping† NSR0620P2T5G SOD−923 (Pb−Free) 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 3B Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 0 1 Publication Order Number: NSR0620P2/D NSR0620P2T5G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 520 190 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 175 570 °C/W mW TJ, Tstg −55 to +125 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 2.0 9.0 10 270 350 480 310 390 520 Unit Reverse Leakage (VR = 10 V) (VR = 20 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) VF Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 12 pF Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr 4.0 ns DC Current Source + − 750 mH 50 W Output Pulse Generator 0.1 mF 0V IF tr 10% 90% VR 0.1 mF tp Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time << trr. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 mA mV NSR0620P2T5G IR, REVERSE CURRENT (mA) 10000 100 125°C 85°C 10 25°C −40°C 1 0.1 0 0.1 0.2 0.3 0.4 VF, FORWARD VOLTAGE (V) 0.5 85°C 100 10 25°C 1 0.1 −40°C 0.01 0.001 0.0001 0.6 125°C 1000 0 2 4 6 8 10 12 14 16 VR, REVERSE VOLTAGE (V) Figure 2. Figure 3. 22 Ct, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 VR, REVERSE VOLTAGE (V) Figure 4. http://onsemi.com 3 16 18 20 18 20 NSR0620P2T5G PACKAGE DIMENSIONS SOD−923 CASE 514AB−01 ISSUE B −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.016 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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