Advance Technical Information IXTF02N450 High Voltage Power MOSFET VDSS ID25 = 4500V = 200mA Ω ≤ 750Ω RDS(on) (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 200 mA IDM TC = 25°C, Pulse Width Limited by TJM 600 mA PD TC = 25°C 78 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 20..120 / 4.5..27 N/lb. 4500 V~ 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 1 5 1 = Gate 2 = Source z z z z z z VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 5 μA 10 μA μA RDS(on) 4.0 Note 2, TJ = 100°C VGS = 10V, ID = 10mA, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved 6.5 25 750 V 5 = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Characteristic Values Min. Typ. Max. Isolated Tab Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) 2 High Voltage Package Easy to Mount Space Savings High Power Density Applications z z z z High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems Ω DS100499(10/12) IXTF02N450 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 60V, ID = 30mA, Note 1 60 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS i4-PakTM (HV) Outline 100 mS 256 pF 19 pF 5.5 pF RGi Gate Input Resistance 76 Ω td(on) Resistive Switching Times 17 ns 48 ns 28 ns 143 ns 10.4 nC 3.4 nC 5.0 nC tr td(off) tf VGS = 10V, VDS = 500V, ID = 100mA RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd Pin Pin Pin Pin 1 2 3 4 = = = = Gate Soure Drain Isolated 1.6 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 mA ISM Repetitive, Pulse Width Limited by TJM 800 mA VSD IF = IS, VGS = 0V, Note 1 trr IF = 200mA, -di/dt = 50A/μs, VR = 100V Notes: 1.5 1.6 V μs 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp IDSS measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF02N450 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 350 VGS = 10V 9V 8V 180 250 140 ID - MilliAmperes ID - MilliAmperes 160 VGS = 10V 9V 8V 300 7V 120 100 80 60 200 7V 150 100 40 50 20 6V 6V 0 0 0 20 40 60 80 100 120 140 0 160 50 100 150 250 300 350 400 Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 200 2.6 VGS = 10V 8V 180 VGS = 10V 2.2 160 7V 140 R DS(on) - Normalized ID - MilliAmperes 200 VDS - Volts VDS - Volts 120 100 80 6V 60 40 I D = 200mA 1.8 I D = 100mA 1.4 1.0 0.6 20 5V 0.2 0 0 50 100 150 200 250 300 -50 350 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 220 2.4 200 VGS = 10V 2.2 TJ = 125ºC 180 2.0 160 ID - MilliAmperes R DS(on) - Normalized -25 VDS - Volts 1.8 1.6 TJ = 25ºC 1.4 140 120 100 80 60 1.2 40 1.0 20 0 0.8 0 50 100 150 200 ID - MilliAmperes © 2012 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTF02N450 Fig. 8. Transconductance Fig. 7. Input Admittance 250 500 200 400 g f s - MilliSiemens ID - MilliAmperes TJ = - 40ºC 150 TJ = 125ºC 25ºC 100 - 40ºC 25ºC 300 125ºC 200 100 50 0 0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 50 100 VGS - Volts 200 250 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 600 VDS = 1000V 9 500 I D = 100mA 8 I G = 1mA 7 400 VGS - Volts IS - MilliAmperes 150 ID - MilliAmperes 300 200 6 5 4 3 TJ = 125ºC 2 100 TJ = 25ºC 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 1 2 VSD - Volts 3 4 5 6 7 8 9 10 11 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1,000 10 1 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 10 0.1 0.01 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTF02N450 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 1ms ID - MilliAmperes ID - MilliAmperes 1ms 100 DC 100 10ms TJ = 150ºC 10 100 10ms TJ = 150ºC 100ms TC = 25ºC Single Pulse 1,000 VDS - Volts © 2012 IXYS CORPORATION, All Rights Reserved DC TC = 75ºC Single Pulse 10,000 10 100 100ms 1,000 10,000 VDS - Volts IXYS REF: T_02N450(H5)10-31-12-A