FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1414-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 1400 2100 mA Transconductance gm VDS = 5V, IDS = 900mA - 1400 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 70mA -0.5 -1.5 -3.0 V -5 - - V 34.0 35.0 - dBm 6.0 6.5 - dB - 900 1100 mA - 27 - % - - ±0.6 dB -44 -46 - dBc Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr ηadd IGS = -70µA VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 14.0 ~ 14.5 GHz, ZS = ZL = 50Ω Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 14.5GHz, ∆f = 10MHz 2-Tone Test Pout = 24.0dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W ∆Tch 10V x Idsr x Rth - - 66 °C Channel Temperature Rise CASE STYLE: IA Edition 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1414-3F Internally Matched Power GaAs FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER Output Power (dBm) 0 50 100 150 31 VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2 - tone test Pout -15 29 -25 27 IM3 25 -35 23 -45 21 -55 18 200 20 22 24 26 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER 36 VDS=10V P1dB 36 Pin=31dBm 35 29dBm 34 27dBm 33 25dBm 32 VDS=10V f = 14.25 GHz 34 Pout 32 30 40 28 30 26 20 ηadd 10 24 18 14.0 14.1 14.2 14.3 14.4 14.5 20 22 24 26 28 Input Power (dBm) Frequency (GHz) 2 IM3 (dBc) 10 33 30 32 ηadd (%) Output Power (S.C.L.) (dBc) 20 Output Power (dBm) Total Power Dissipation (W) 30 FLM1414-3F Internally Matched Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 13.8 GHz 14.7 +j10 14.2 14.0 14.5 14.5 13.8 GHz 13.8 GHz 14.7 14.2 14.5 0 10 25 14.5 14.7 50Ω 100 180° 250 14.2 14.0 +j250 14.0 4 3 2 14.7 1 0° 14.2 -j10 13.8 GHz -j250 14.0 0.1 -j25 -j100 SCALE FOR |S12| SCALE FOR |S21| 0.2 -90° -j50 FREQUENCY S11 (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 900mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 13800 .455 -48.9 2.070 141.1 .075 132.4 .555 71.5 13900 .417 -62.3 2.158 130.4 .081 122.1 .528 63.6 14000 .384 -81.2 2.237 118.7 .086 107.9 .491 55.1 14100 .343 -101.5 2.288 106.8 .092 94.3 .449 47.2 14200 .329 -125.2 2.313 94.4 .097 80.1 .398 39.6 14300 .321 -151.3 2.306 82.3 .099 66.1 .344 33.1 14400 .347 -174.4 2.272 69.9 .102 50.7 .283 28.3 14500 .376 163.7 2.208 58.3 .104 36.6 .223 25.2 14600 .413 147.0 2.130 46.3 .103 25.0 .174 23.7 14700 .454 131.6 2.045 35.1 .103 10.9 .139 26.5 3 FLM1414-3F Internally Matched Power GaAs FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.7±0.15 (0.382) 2-R 1.25±0.15 (0.049) 4 2 3 1.8±0.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.0±0.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.5±0.15 (0.650) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4