CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET MTB060N06I3 BVDSS 60V ID RDSON(MAX)@VGS=10V, ID=10A 16A 35mΩ(typ.) RDSON(MAX)@VGS=5V, ID=8A 40mΩ(typ.) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTB060N06I3 TO-251 G：Gate D：Drain S：Source G D S Ordering Information Device MTB060N06I3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB060N06I3 CYStek Product Specification Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 60 ±20 16 10 30 16 12.8 3.6 20 8 -55~+150 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 6.25 110 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 MTB060N06I3 Min. Typ. Max. Unit Test Conditions 60 1.0 12 - 1.7 10 35 40 3.0 ±100 1 25 50 55 V V S nA μA μA A mΩ mΩ VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =48V, VGS =0 VDS =40V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =5V, ID=8A - 11 2.2 4.2 11.7 5.2 18 - nC ID=10A, VDS=20V, VGS=10V ns VDS=20V, ID=1A, VGS=10V, RG=6Ω CYStek Product Specification CYStech Electronics Corp. tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 6 1165 56 43 2.5 - - 0.87 16 8 12 48 1.3 - Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 3/8 pF VGS=0V, VDS=20V, f=1MHz Ω VGS=15mV, VDS=0, f=1MHz A V ns nC IF=IS, VGS=0V IF=5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTB060N06I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 30 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V, 7V,6V,5V ID, Drain Current (A) 25 VGS=4V 20 15 10 VGS=3V 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 -75 -50 -25 8 2 4 6 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 1000 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10000 VGS=3V VGS=2.5V 100 VGS=4.5V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 400 2.4 360 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 320 280 2 1.6 240 VGS=5V, ID=8A 1.2 200 160 0.8 120 ID=10A ID=8A 80 VGS=10V, ID=10A 0.4 40 0 0 0 MTB060N06I3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 100 C oss Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 0.2 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 50 75 100 125 150 175 Gate Charge Characteristics 100 10 VDS=20V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=5V Pulsed Ta=25°C 8 VDS=50V 6 4 2 ID=10A 0 0.1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 Qg, Total Gate Charge(nC) 16 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 20 100 RDSON Limited 18 10μ s 10 ID, Maximum Drain Current(A) ID, Drain Current (A) 0 100 μs 1ms 1 TC=25°C, Tj=150°C VGS=10V Single Pulse 0.1 10ms 100ms DC 16 14 12 10 8 6 4 VGS=10V 2 0 0.01 0.1 MTB060N06I3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 6/8 Typical Characteristics(Cont.) Typical Transfer Characteristics 30 VDS=5V ID, Drain Current(A) 25 20 15 10 5 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 Transient Thermal Response Curves 10 ZθJC(t), Thermal Response D=0.5 0.2 1 0.1 1.ZθJC(t)=6.25°C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.05 0.02 0.01 0.1 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB060N06I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB060N06I3 CYStek Product Specification Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-251 Dimension Marking: Product Name B060 N06 □□□□ Date Code 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Millimeters Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF 0.60 0.90 DIM A B C D E F Inches Min. Max. 0.252 0.268 0.205 0.217 0.268 0.283 0.283 0.307 0.091 REF 0.024 0.035 DIM G H J K L M Millimeters Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Inches Min. Max. 0.020 0.028 0.087 0.094 0.018 0.022 0.018 0.024 0.035 0.059 0.213 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB060N06I3 CYStek Product Specification