http://www.fujielectric.com/products/semiconductor/ FGW35N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Equivalent circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Pulsed Collector Current Turn-Off Safe Operating Area Symbols VCES VGES IC@25 IC@100 ICP - Short Circuit Withstand Time tSC DC Collector Current Maximum Power Dissipation PD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics Units Remarks 600 V ±20 V 64 A TC =25°C, Tj =150°C 35 A TC =100°C, Tj =150°C 105 A Note *1 105 A VCE ≤600V, Tj ≤175°C VCC ≤300V, VGE=12V 5 μs Tj ≤150°C 230 W TC =25°C -40~+175 °C -55~+175 °C Collector Gate Emitter Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions Collector-Emitter Breakdown Voltage V(BR)CES IC = 250μA, VGE = 0V Zero Gate Voltage Collector Current ICES VCE = 600V, VGE = 0V Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage IGES VGE (th) VCE = 0V, VGE = ±20V VCE = +20V, IC = 35mA Collector-Emitter Saturation Voltage VCE (sat) VGE = +15V, IC = 35A Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres Gate Charge QG Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff VCE=25V VGE=0V f=1MHz VCC = 400V IC = 35A VGE = 15V Tj = 25°C VCC = 400V IC = 35A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD (FDRW15S60L) reverse recovery. Tj = 175°C VCC = 400V IC = 35A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD (FDRW15S60L) reverse recovery. Thermal resistance Items Symbols Thermal Resistance, Junction-Ambient Thermal Resistance Junction to Case Rth(j-a) Rth(j-c) Conditions 1 Tj =25°C Tj =175°C Tj =25°C Tj =175°C Characteristics min. typ. max. 600 250 10 200 4.0 5.0 6.0 1.50 1.95 1.80 2800 140 100 - 210 - - 32 60 200 40 0.90 - - 0.85 - - 33 60 225 50 1.40 - - 1.25 - Characteristics min. typ. max. 50 0.641 Unit V µA mA nA V V pF nC ns mJ ns mJ Unit °C/W FGW35N60H Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Graph.1 DC Collector Current vs T V ≥+15V, T ≤175ºC Graph.2 Collector Current vs. switching frequency V =+15V, T ≤175ºC, V =400V, D=0.5, R =10Ω, T =100ºC C GE j GE C G CC C 180 100 160 140 Switching frequency fs [kHz] Collector current IC [A] 80 Tj≤175℃ 60 40 120 100 20 80 60 40 20 0 0 25 50 75 100 125 150 0 175 10 Case Temperature [°C] 20 30 40 50 60 Collector-Emitter corrent : ICE [A] Graph.3 Typical Output Characteristics (V -I ) T =25ºC CE Graph.4 Typical Output Characteristics (V -I ) T =175ºC C CE j C j 60 60 VGE=20V 50 15V 12V 10V VGE=20V 50 15V 8V 40 40 30 30 12V 10V IC [A] IC [A] 8V 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 VCE [V] 2.0 2.5 3.0 3.5 4.0 150 175 VCE [V] Graph.6 Gate Threshold Voltage vs. T I =35mA, V =20V Graph.5 Typical Transfer Characteristics V =+15V GE C j CE 8 60 7 Gate Threshold Voltage VGE(th) [V] 50 IC [A] 40 30 Tj=175℃ Tj=25℃ 20 max. 6 5 typ. 4 min. 3 2 10 1 0 0 0 2 4 6 8 -50 10 -25 0 25 50 75 Tj [℃] VGE [V] 2 100 125 FGW35N60H Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.8 Typical Gate Charge V =400V, I =35A, T =25ºC Graph.7 Typical Capacitance V =0V, f=1MHz, T =25ºC GE CC j 4 10 C j 20 Cies 3 10 15 Coes 2 VGE [V] C [pF] Vcc=400V 10 Cres 10 1 10 5 0 10 0 -2 -1 10 0 10 B 1 10 10 0 50 100 VCE [V] Graph.9 Typical switching time vs. I T =175ºC, V =400V, L=500µH V =15V,R =10Ω CC C 1000 Switching Times [nsec] td(off) 100 tf td(on) tr 10 td(off) td(on) 100 tf tr 10 1 1 0 10 20 30 40 50 60 0 70 10 20 j CC 60 CC C GE G 4 4 3 3 2 50 G C GE 40 Graph.12 Typical switching losses vs. R T =175ºC, V =400V, I =35A, L=500µH V =15V Graph.11 Typical switching losses vs. I T =175ºC, V =400V, L=500µH V =15V, R =10Ω j 30 Gate Resistor Rg [Ω] Collector Current IC [A] Switching Energy Losses [mJ] Switching Times [nsec] 300 GE G 1000 Switching Energy Losses [mJ] 250 G j CC GE 200 Graph.10 Typical switching time vs. R T =175ºC, V =400V, I =35A, L=500µH V =15V C j 150 Qg [nC] Eon Eoff 1 0 Eoff 2 Eon 1 0 0 10 20 30 40 50 60 70 0 Collector Current IC [A] 10 20 30 40 Gate Resistor Rg [Ω] 3 50 60 FGW35N60H Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.14 Transient thermal resistance of IGBT Graph.13 Reverse biased Safe Operating Area T ≤175ºC, V =+15V/0V, R =10Ω j GE G 101 200 100 Zth(j-c) [℃/W] Collector current IC [A] 150 100 10-1 10-2 50 10-3 10-6 0 0 200 400 600 10-5 10-4 10-3 t [sec] 800 Collector-Emitter voltage : VCE [V] 4 10-2 10-1 100 FGW35N60H Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Outview : TO-247 Package ① ② ③ CONNECTION ① GATE ② COLLECTOR ③ EMITTER ① ② DIMENSIONS ARE IN MILLIMETERS. ③ 5 FGW35N60H Discrete IGBT http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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