HANBit HMF1M32M8G FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V Part No. HMF1M32M8G GENERAL DESCRIPTION The HMF1M32M8G is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output..When FROM module is disable condition the module is becoming power standby mode, system designer can get low power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES w Access time: 55, 70, 90 and 120ns PIN SYMBOL PIN w High-density 4MByte design 1 Vss w High-reliability, low-power design 2 A3 3 w Single + 5V ± 0.5V power supply SYMBOL PIN SYMBOL 25 Vcc 49 DQ17 26 DQ8 50 DQ18 A2 27 DQ9 51 DQ22 4 A1 28 DQ10 52 DQ21 w Easy memory expansion 5 A0 29 /CE_LM2 53 DQ20 w All inputs and outputs are TTL-compatible 6 Vcc 30 Vcc 54 DQ19 w FR4-PCB design 7 A11 31 /CE_LM1 55 Vcc w Low profile 72-pin SIMM 8 /OE 32 DQ15 56 A15 9 A10 33 DQ14 57 A12 w Minimum 1,000,000 write/erase cycle 10 Vcc 34 DQ13 58 A7 w Sector erases architecture 11 /CE_LL2 35 DQ12 59 Vcc w Sector group protection 12 /CE_LL1 36 DQ11 60 A8 w Temporary sector group unprotection 13 DQ7 37 A18 61 A9 14 DQ0 38 A16 62 DQ24 15 DQ1 39 Vss 63 DQ25 16 DQ2 40 A6 64 DQ26 17 DQ6 41 Vcc 65 /CE_UU2 18 DQ5 42 A5 66 /CE_UU1 19 DQ4 43 A4 67 DQ31 20 DQ3 44 Vcc 68 DQ30 21 /WE 45 /CE_UM2 69 DQ29 22 A17 46 /CE_UM1 70 DQ28 23 A14 47 DQ23 71 DQ27 24 A13 48 DQ16 72 Vss OPTIONS MARKING w Timing 55ns access -55 70ns access -70 90ns access -90 120ns access -120 w Packages 72-pin SIMM URL : www.hbe.co.kr REV.02(August,2002) M 1 72-PIN SIMM TOP VIEW HANBit Electronics Co., Ltd. HANBit HMF1M32M8G FUNCTIONAL BLOCK DIAGRAM DQ 0-DQ31 DQ 32 A0-A18 A19 A0-18 A0-18 A0-18 DQ0-7 DQ0-7 /WE /WE U1 /OE U5 /OE /CE /CE /CE-LL2 /CE-LL1 A0-18 A0-18 DQ8-15 DQ8-15 /WE /WE U2 /OE U6 /OE /CE /CE /CE-LM2 /CE-LM1 A0-18 A0-18 DQ16-23 DQ 16-23 /WE /WE U3 /OE U7 /OE /CE /CE /CE-UM2 /CE-UM1 A0-18 A0-18 DQ24-31 /WE /OE /OE DQ 24-31 /WE /WE /WE /OE U4 /OE U8 /CE /CE /CE-UU2 /CE-UU1 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care URL : www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions ab ove those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 12 mA /CE = VIL, /OE=VIH ICC2 40 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL : www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Byte Programming Time - 7 Excludes system-level µs 300 overhead Excludes system-level Chip Programming Time - 3.6 10.8 sec overhead CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 4 6 pF VOUT = 0 8 12 pF VIN = 0 8 12 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tRC tAVQV tACC TEST SETUP Read Cycle Time -55 -90 UNIT Min 55 90 ns Max 55 90 ns Max 55 90 ns /CE = V IL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 18 20 ns tGHQZ tDF Output Enable to Output High-Z Max 18 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Notes : Test Conditions : Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns , In case of 55ns-5ns Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V Timing measurement reference level URL : www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION -55 -90 UNIT Min 55 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 25 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns JEDEC STANDARD tAVAV tWC Write Cycle Time tAVWL tAS tWLAX tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 30 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Vcc set up time Min 50 50 µs tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL : www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION -55 -90 UNIT Min 55 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 40 45 ns tDVEH tDS Data Setup Time Min 25 45 ns tEHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 0 ns tWLEL tWS /WE Setup Time Min 0 0 ns tEHWH tWH /WE Hold Time Min 0 0 ns tELEH tCP /CE Pulse Width Min 30 45 ns tEHEL tCPH /CE Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 1 1 sec JEDEC STANDARD tAVAV tWC Write Cycle Time tAVEL tAS tELAX Notes : This does not include the preprogramming time. URL : www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G u READ OPERATIONS TIMING u RESET TIMING URL : www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL : www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL : www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL : www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF1M32M8G PACKAGE DIMENSIONS 108mm 3.2 mm 21.59 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm MIN 0.25 mm MAX 1.29±0.08 mm Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF1M32M8G-55 4MByte 1M×32bit 72pin-SIMM HMF1M32M8G-70 4MByte 1M×32bit HMF1M32M8G-90 4MByte HMF1M32M8G-120 4MByte URL : www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 5.0V 55ns 72pin-SIMM 8EA 5.0V 70ns 1M×32bit 72pin-SIMM 8EA 5.0V 90ns 1M×32bit 72pin-SIMM 8EA 5.0V 120ns 11 Number HANBit Electronics Co., Ltd.