IXFA14N60P IXFP14N60P IXFH14N60P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600V = 14A Ω ≤ 550mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 14 42 A A IA EAS TC = 25°C TC = 25°C 14 900 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md FC Mounting Torque Mounting Force Weight TO-263 TO-220 TO-247 G TO-247 G BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.0 z z IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved z V 5 μA 500 μA 450 International standard packages Avalanche rated Easy to mount Space savings High power density Applications: ± 100 nA TJ = 125°C D = Drain TAB = Drain Advantages z V 5.5 (TAB) S Features z Characteristic Values Min. Typ. Max. D G = Gate S = Source z Symbol Test Conditions (TJ = 25°C unless otherwise specified) (TAB) D S z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 550 mΩ DS99389F(12/08) IXFA14N60P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 7 VDS= 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 Qgd 13 S 2500 pF 215 pF 13 pF 23 ns 27 ns 70 ns 26 ns 36 nC 16 nC 12 nC TO-220 (IXFP) Outline Pins: 1 - Gate 2 - Drain 0.42 °C/W RthJC RthCH IXFP14N60P IXFH14N60P (TO-220) 0.50 °C/W (TO-247) 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 14 A ISM Repetitive, pulse width limited by TJM 42 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 14A, -di/dt = 100A/μs 200 ns A nC 6.0 0.6 VR = 100V, VGS = 0V TO-247 (IXFH) Outline 1 2 3 ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXFA) Outline Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA14N60P Fig. 1. Output Characteristics @ 25ºC IXFP14N60P IXFH14N60P Fig. 2. Extended Output Characteristics @ 25ºC 30 14 VGS = 10V 9V 12 VGS = 10V 9V 27 24 21 ID - Amperes ID - Amperes 10 8V 8 6 18 8V 15 12 9 4 7V 6 2 3 0 7V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 14 3.2 VGS = 10V 8V VGS = 10V 2.8 RDS(on) - Normalized 12 10 ID - Amperes 12 VDS - Volts VDS - Volts 7V 8 6 4 2.4 I D = 14A 2.0 I D = 7A 1.6 1.2 0.8 2 6V 0.4 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 16 3.4 VGS = 10V 14 3.0 TJ = 125ºC 12 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 1.4 TJ = 25ºC 10 8 6 4 1.0 2 0 0.6 0 3 6 9 12 15 18 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_14N60P(5J)12-22-08-G IXFA14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 45 24 40 21 g f s - Siemens ID - Amperes 35 TJ = 125ºC 25ºC - 40ºC 30 25 IXFP14N60P IXFH14N60P 20 TJ = - 40ºC 25ºC 125ºC 18 15 12 9 15 10 6 5 3 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 VDS = 300V 40 8 35 7 VGS - Volts IS - Amperes I D = 7A 30 25 TJ = 125ºC 20 I G = 10mA 6 5 4 3 15 2 TJ = 25ºC 10 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit Ciss 1,000 100 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 25µs 100µs 10 1ms 10ms 10 TJ = 150ºC Crss TC = 25ºC DC Single Pulse 1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 IXFA14N60P IXFP14N60P IXFH14N60P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08-G