BWTECH BCX52 Pnp silicon af transistor Datasheet

BCX51-BCX53
PNP Silicon AF Transistors
Features
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• RoHS compliant package
Mechanical Data
• Case: SOT-89 Molded plastic
• Epoxy: UL94V-O rate flame retardant
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
BCX51-BCX53
PNP Silicon AF Transistors
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
BCX51
BCX52
BCX53
Unit
VCEO
Collector-Emitter Voltage
45
60
80
V
VCBO
Collector-Base Voltage
45
60
100
V
VEBO
Emitter-Base Voltage
5
5
5
V
IC
Collector Current—Continuous
1
A
ICM
Peak collector current, tp ≤ 10
1.5
A
IB
Base current
100
mA
IBM
Peak base current
200
mA
Ptot
Total power dissipation, TS ≤ 120 °C
2
W
TJ
Junction temperature
150
°C
Tstg
Storage temperature
-65~+150
°C
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
RthJS
≤ 15
K/W
Junction - soldering point
DC CHARACTERISTICS
Symbol
Parameter
V(BR)CEO
Collector-Emitter Breakdown V oltage
(Ic=-10mAdc,IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(Ic=-10μAdc,IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10μAdc,Ic=0)
MIN
TYP
MAX
BCX51
45
V
BCX52
60
V
BCX53
80
V
BCX51
45
V
BCX52
60
V
BCX53
100
V
BCX51
5
V
BCX52
5
V
BCX53
5
V
V
Collector Cutoff Current V
ICBO
UNIT
(VCB=-30v)
0.1
uA
(VcB=-30Vdc,TA=150°C)
20
uA
DC Current Gain
(IC = 5 mA, VCE = 2 V)
HFE
(IC = 150 mA, VCE = 2 V)
Publication Order Number: [BCX51-BCX53]
BCX51
25
BCX52
25
BCX53
25
BCX51-53
40
hFE-grp.10
63
100
160
hFE-grp.16
100
160
250
250
© Bruckewell Technology Corporation Rev. A -2014
BCX51-BCX53
PNP Silicon AF Transistors
DC CHARACTERISTICS
Symbol
Parameter
HFE
VCE(sat)
MIN
(IC = 500 mA, VCE = 2 V)
BCX51
25
BCX52
25
BCX53
25
TYP
Collector-Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VBE(on)
Base-Emitter Voltag
(IC = 500 mA, VCE = 2 V)
AC CHARACTERISTICS
Symbol
Parameter
fT
MIN
Current-Gain-Bandwidth Product
125
(Ic= -10mAdc,VCE= -5.0Vdc,f=100MHz)
AC CHARACTERISTICS
Type
TYP
Marking
Pin Configuration
MAX
UNIT
0.5
V
1.0
V
MAX
UNIT
MHz
Package
BCX51
AA
1=B
2=C
3=E
SOT89
BCX51-10
AC
1=B
2=C
3=E
SOT89
BCX51-16
AD
1=B
2=C
3=E
SOT89
BCX52
AE
1=B
2=C
3=E
SOT89
BCX52-10
AG
1=B
2=C
3=E
SOT89
BCX52-16
AM
1=B
2=C
3=E
SOT89
BCX53
AH
1=B
2=C
3=E
SOT89
BCX53-10
AK
1=B
2=C
3=E
SOT89
BCX53-16
AL
1=B
2=C
3=E
SOT89
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
BCX51-BCX53
PNP Silicon AF Transistors
■RATINGS AND CHARACTERISTIC CURVES
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
BCX51-BCX53
PNP Silicon AF Transistors
■RATINGS AND CHARACTERISTIC CURVES
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
BCX51-BCX53
PNP Silicon AF Transistors
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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described in the product specification is suitable for use in a particular application. Parameters
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may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
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