HTSEMI MM3Z2V7 Silicon planar zener diode Datasheet

MM3Z2V0~MM3Z75
Silicon Planar Zener Diodes
Features
• Total power dissipation : max. 300 mW
PINNING
PIN
• Small plastic package suitable for
surface mounted design
• Tolerance approximately ± 5%
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
Ptot
300
mW
Tj
150
O
Tstg
- 55 to + 150
O
Symbol
Max.
RθJA
417
VF
0.9
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2V0~MM3Z75
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
MM3Z2V0
MM3Z2V2
MM3Z2V4
MM3Z2V7
MM3Z3V0
MM3Z3V3
MM3Z3V6
MM3Z3V9
MM3Z4V3
MM3Z4V7
MM3Z5V1
MM3Z5V6
MM3Z6V2
MM3Z6V8
MM3Z7V5
MM3Z8V2
MM3Z9V1
MM3Z10
MM3Z11
MM3Z12
MM3Z13
MM3Z15
MM3Z16
MM3Z18
MM3Z20
MM3Z22
MM3Z24
MM3Z27
MM3Z30
MM3Z33
MM3Z36
MM3Z39
MM3Z43
MM3Z47
MM3Z51
MM3Z56
MM3Z62
MM3Z68
MM3Z75
1)
Marking
Code
B0
C0
1C
1D
1E
1F
1H
1J
1K
1M
1N
1P
1R
1X
1Y
1Z
2A
2B
2C
2D
2E
2F
2H
2J
2K
2M
2N
2P
2R
2X
2Y
2Z
3A
3B
3C
3D
3E
3F
3H
for
Dynamic Impedance
Reverse Leakage Current
VZT
ZZT (Max.)
at IZT
IR (Max.)
at VR
Vznom
lZT
V
mA
V
Ω
mA
μA
V
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
100
100
100
110
120
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
35
40
40
45
50
55
60
70
80
80
90
100
130
150
180
180
200
250
300
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
120
120
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
1
1
0.2
0.2
0.2
0.5
0.7
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
VZ is tested with pulses (20 ms).
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2V0~MM3Z75
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Iz
Tj=25o C
3V9
2V7
6V8
4V7
3V3
40
8V2
5V6
30
20
Test current Iz
5mA
10
0
0
1
2
3
4
5
6
8
7
9
10 V
Vz
Breakdown characteristics
Tj = constant (pulsed)
mA
30
Tj=25 oC
10
12
Iz
15
20
18
22
27
Test current Iz
5mA
10
33
0
0
10
20
30
40 V
Vz
Power Dissipation: Ptot (mW)
300
200
100
0
0
25
150
100
Ambient Temperature: Ta ( C)
O
Derating Curve
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2V0~MM3Z75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
A
mm
1.10
0.80
bp
0.40
0.25
C
0.15
0.10
D
1.80
1.60
E
HE
1.35
1.15
2.80
2.30
４
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５