AP4417GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-35V
RDS(ON)
75mΩ
ID
G
▼ RoHS Compliant
BVDSS
-15A
S
Description
G
D S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4417GJ) is
available for low-profile applications.
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-35
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-15
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-9
A
1
IDM
Pulsed Drain Current
-40
A
PD@TC=25℃
Total Power Dissipation
26
W
Linear Derating Factor
0.21
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
4.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200902252
AP4417GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
75
mΩ
VGS=-4.5V, ID=-8A
-
-
110
mΩ
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-8A
-
6
10
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.5
-
nC
VDS=-15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
17
-
ns
tf
Fall Time
RD=1.88Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=-25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
IS=-10A, VGS=0V
-
-
-1.2
V
IS=-8A, VGS=0V,
-
18
-
ns
dI/dt=-100A/µs
-
12
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4417GH/J
35
45
-10V
-7.0V
o
T C = 25 C
-10V
-7.0V
T C = 150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
28
30
-5.0V
-4.5V
15
V G = -3.0 V
-5.0V
21
-4.5V
14
V G = -3.0 V
7
0
0
0
2
4
6
0
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
170
1.8
I D =-10A
V G =-10V
I D = -8 A
T C =25 ℃
Normalized RDS(ON)
140
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
110
80
1.5
1.2
0.9
50
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
Normalized -VGS(th) (V)
1.6
8
-IS(A)
T j =150 o C
T j =25 o C
4
1.2
0.8
0.4
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4417GH/J
f=1.0MHz
12
1000
-VGS , Gate to Source Voltage (V)
V DS =-30V
I D =-8A
C iss
C (pF)
8
C oss
100
C rss
4
10
0
0
2
4
6
8
1
10
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100.0
100us
-ID (A)
10.0
1ms
10ms
100ms
DC
1.0
o
T c =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
QG
20
o
o
T j =25 C
-4.5V
T j =150 C
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4