INCHANGE Semiconductor MURF1620CT Ultrafast Rectifier FEATURES ·Very short recovery time ·Soft recovery behaviour ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Antiparallel diode for high frequency switching devices ·Antisaturation diode ·Snubber diode ·Free wheeling diode in converters and motor control circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 16 A IFSM Nonrepetitive Peak Surge Current@45℃ (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 A Junction Temperature -40~150 ℃ Storage Temperature Range -40~150 ℃ TJ Tstg isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MURF1620CT Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 4.2 ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF=8A ;Tj=25℃ IF=8A ;Tj=150℃ 0.975 0.895 V 250 5 μA 25 ns VF* Maximum Instantaneous Forward Voltage IR* Maximum Instantaneous Reverse Current VR= VRWM;Tj=150℃ VR= VRWM trr Maximum Reverse Recovery Time IF =0.5A;IR=1A;Irr=0.25A isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark