Hanbit HMF1M32F8-90 Flash-rom module 4mbyte (1mx32bit), 100pin-mmc, 5.5v design Datasheet

HANBit
HMF1M32F8
Flash-ROM Module 4MByte (1Mx32Bit), 100Pin-MMC, 5.5V Design
Part No. HMF1M32F8
GENERAL DESCRIPTION
The HMF1M32F8 is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a
x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 100-pin stackable type, double -sided, FR4printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2 , /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and
output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible.
PIN ASSIGNMENT
FEATURES
w Access time: 55, 70, 90, 120ns
w High-density 4MByte design
P1
P2
PIN
Symbol
PIN
w High-reliability, low-power design
1
Vcc
26
w Single + 5V ± 0.5V power supply
2
NC
27
3
/CE_LL1
28
4
/CE_LM1
29
w All in/outputs are TTL-compatible
5
DQ15
w FR4-PCB design
6
DQ14
w 100-pin Designed by
7
8
w Easy memory expansion
50-pin Fine Pitch Connector
Symbol
PIN
Symbol
PIN
Symbol
Vcc
51
Vcc
76
Vcc
/CE_LL2
52
NC
77
/CE_UM2
/CE_LM2
53
/CE_UM1
78
/CE_UU2
A18
54
/CE_UU1
79
DQ22
30
A17
55
DQ31
80
DQ21
31
A16
56
DQ30
81
DQ20
DQ13
32
A15
57
DQ29
82
DQ19
Vss
33
Vss
58
Vss
83
Vss
9
DQ12
34
A14
59
/OE
84
DQ18
10
DQ11
35
A13
60
/WE
85
DQ17
w Sector erases architecture
11
DQ10
36
DQ9
61
NC
86
DQ16
w Sector group protection
12
DQ8
37
DQ7
62
NC
87
NC
w Temporary sector group unprotection
13
Vss
38
Vss
63
Vss
88
Vss
14
DQ6
39
DQ5
64
NC
89
NC
15
DQ4
40
A12
65
NC
90
NC
16
DQ3
41
A11
66
DQ28
91
NC
17
DQ2
42
A10
67
DQ27
92
NC
18
Vss
43
Vss
68
Vss
93
Vss
19
DQ1
44
A9
69
DQ26
94
NC
20
DQ0
45
A8
70
DQ25
95
NC
21
A0
46
A7
71
DQ24
96
NC
22
A1
47
A6
72
DQ23
97
NC
23
A2
48
A5
73
Vss
98
Vss
24
A3
49
A4
74
NC
99
NC
25
Vcc
50
Vcc
75
Vcc
100
Vcc
w Minimum 1,000,000 write/erase cycle
OPTIONS
MARKING
w Timing
55ns access
-55
70ns access
-70
90ns access
-90
120ns access
-120
w Packages
100-pin SMM
URL: www.hbe.co.kr
REV.02 (August,2002)
F
1
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
FUNCTIONAL BLOCK DIAGRAM
32
DQ 0-DQ31
A0-18
19
A0-A18
A0-18
A0-18
DQ0-7
/WE
DQ0-7
DQ0-7
/WE
U1
/OE
DQ0-7
U5
/OE
/CE
/CE
/CE-LL2
/CE-LL1
A0-18
/WE
A0-18
DQ8-15
DQ0-7
/WE
U2
/OE
/CE
/CE-LM2
/CE-LM1
A0-18
A0-18
DQ16-23
DQ0-7
DQ 0-7
/WE
/WE
U3
/OE
/CE
/CE-UM2
/CE-UM1
A0-18
DQ0-7
/WE
U4
/OE
A0-18
DQ24-31
/WE
/OE
URL: www.hbe.co.kr
REV.02 (August,2002)
DQ24-31
DQ0-7
/WE
U8
/OE
/CE
/CE
/CE-UU1
DQ16-23
U7
/OE
/CE
/OE
U6
/OE
/CE
/WE
DQ8-15
DQ0-7
/CE-UU2
2
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Q
ACTIVE
WRITE or ERASE
X
L
L
D
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-2.0V to +7.0V
Voltage with respect to ground Vcc
VCC
-2.0V to +7.0V
Power Dissipation
PD
8W
TSTG
-65oC to +125oC
Voltage with respect to ground all other pins
Storage Temperature
Operating Temperature
TA
-55oC to +125oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the
device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ±5% device Supply Voltages
VCC
4.75V
5.25V
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
5.5V
Ground
VSS
0
PARAMETER
TYP.
MAX
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Load Current
Vcc=Vcc max, VIN= VSS to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= VSS to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
0.45
V
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2)
/CE = VIL, /OE=VIH,
ICC1
30
mA
/CE = VIL, /OE=VIH
ICC2
40
mA
Vcc Standby Current
/CE= VIH
ICC3
1.0
mA
4.2
V
Low Vcc Lock-Out Voltage
URL: www.hbe.co.kr
REV.02 (August,2002)
VLKO
3
2.4
3.2
V
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
MAX.
Sector Erase Time
-
1
8
sec
Byte Programming Time
-
7
300
µs
Chip Programming Time
-
3.6
10.8
sec
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
CAPACITANCE
PARAMETER
DESCRIPTION
PARAMETER
SYMBOL
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
o
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC STANDARD
TAVAV
tRC
Speed Options
TEST SETUP
Read Cycle Time
UNIT
-55
-70
-90
-120
Min
55
70
90
120
ns
Max
55
70
90
120
ns
Max
55
70
90
120
ns
TAVQV
tACC
Address to Output Delay
/CE = VIL
/OE = VIL
TELQV
tCE
Chip Enable to Output Delay
/OE = VIL
TGLQV
tOE
Output Enable to Output Delay
Max
30
30
35
50
ns
TEHQZ
tDF
Chip Enable to Output High-Z
Max
18
20
20
30
ns
TGHQZ
tDF
18
20
20
30
ns
TAXQX
tQH
Output Enable to Output High-Z
Output Hold Time From
Addresses,
/CE or /OE, Whichever Occurs
First
0
0
0
0
ns
Notes
Min
: Test Conditions
Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF
Input rise and fall times : 5 ns, In case of 55ns-5ns
Input pulse levels : 0.45V to 2.4V, In case of 55ns- 0.0V-3.0V
URL: www.hbe.co.kr
REV.02 (August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
Timing measurement reference level
Input : 0.8V, Incase of 55ns-1.5V
Output : 2.0V, In case of 55ns-1.5V
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER
SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
TAVAV
tWC
Write Cycle Time
Min
TAVWL
tAS
Address Setup Time
Min
TWLAX
tAH
Address Hold Time
Min
40
45
45
50
ns
TDVWH
tDS
Data Setup Time
Min
25
30
45
50
ns
TWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recover Time Before
Min
0
ns
TGHWL
-55
-70
-90
-120
55
70
90
120
0
ns
ns
Write
TELWL
tCS
/CE Setup Time
Min
0
ns
TWHEH
tCH
/CE Hold Time
Min
0
ns
TWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
1
sec
Vcc set up time
Min
50
µs
tVCS
URL: www.hbe.co.kr
REV.02 (August,2002)
5
30
35
45
50
ns
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
Notes : 1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER
SYMBOLS
UNIT
DESCRIPTION
JEDEC
STANDARD
-55
-70
-90
-120
ns
tAVAV
tWC
Write Cycle Time
Min
55
70
90
120
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
40
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
25
30
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before
Min
0
ns
0
ns
Write
tWLEL
tWS
/CE Setup Time
Min
0
ns
tEHWH
tWH
/CE Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
30
35
45
50
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note)
Typ
1
sec
Notes : 1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
URL: www.hbe.co.kr
REV.02 (August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
u READ OPERATIONS TIMING
u RESET TIMING
URL: www.hbe.co.kr
REV.02 (August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr
REV.02 (August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr
REV.02 (August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr
REV.02 (August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMF1M32F8
PACKAGE DIMENSIONS
ORDERING INFORMATION
Part Number
Density
Org.
HMF1M32F8-55
4MByte
1Mx 32
HMF1M32F8-70
4MByte
1Mx 32
HMF1M32F8-90
4MByte
1Mx 32
HMF1M32F8-120
4MByte
1Mx 32
URL: www.hbe.co.kr
REV.02 (August,2002)
Package
100 PinSMM
100 PinSMM
100 PinSMM
100 PinSMM
11
Component
Number
Vcc
SPEED
8EA
5.0V
55ns
8EA
5.0V
70ns
8EA
5.0V
90ns
8EA
5.0V
120ns
HANBit Electronics Co., Ltd.
Similar pages