Data Sheet N0202R R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES Complements to N0202S. VCEO = 20 V IC(DC) = 2.0 A Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0202R-T1-AT Packing Tape 3000p/reel Package Name SOT-23F Package Code PVSF0003ZA-A Mass [TYP.] 0.0126g ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to Base Voltage Symbol VCBO Ratings 20 Unit V VCEO 20 VEBO 6.0 IC(DC) 2.0 IC(pulse) 3.0 Total Power Dissipation PT1 0.2 Total Power Dissipation *2 PT2 1.0 Junction Temperature Tj 150 Storage Temperature Tstg 55 to 150 Note *1. PW 10 ms, Duty Cycle 50% 2 *2. FR-4 board size 2500 mm 1.6 mm, t 5 sec Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) *1 V V A A W W C C ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance Note *1. Pulsed Symbol ICBO IEBO hFE1*1 hFE2*1 VCE(sat)*1 Condition VCB = 16 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 2.0 V, IC = 100 mA VCE = 2.0 V, IC = 2.0 A IC = 1.5 A, IB = 50 mA VBE(sat)* VBE*1 IC = 1.5 A, IB = 50 mA VCE = 6 V, IC = 100 mA fT Cob VCE = 6.0 V, IE = 10 mA VCB = 10.0 V, IE = 0, f = 1.0 MHz 1 MIN. TYP. 135 40 650 Unit nA nA 350 MAX. 100 100 600 0.3 0.5 V 1.05 680 90 55 1.2 750 V mV MHz pF hFE Classification Marking hFE1 ZM 135 to 270 R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 ZL 200 to 400 ZK 300 to 600 Page 1 of 5 N0202R TYPICAL CHARACTERISTICS (Ta = 25C) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA −10 100 IC - Collector Current - (A) dT - Percentage of Rated Power - % 120 SAFE OPERATING AREA 80 60 40 20 Ta = 25˚C 1 ms Single pulse 10 ms −1 100 ms −0.1 −0.01 −1 −10 VCE - Collector to Emitter Voltage - (V) 0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −0.1 −100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −1 −4.0 −100 −90 −80 −0.06 −70 −60 −0.04 −50 −40 −30 −0.02 −10 −0.8 IC - Collector Current - (A) IC - Collector Current - (A) −0.08 −3.0 −2.0 −0.6 IB = −1.0 mA −0.4 −0.2 −20 IB = −10 A 0 −2 −4 −6 −8 VCE - Collector to Emitter Voltage - (V) 0 VCE(sat) - Collector Saturation Voltage - (V) VBE(sat) - Base Saturation Voltage - (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 125˚C hFE - DC Current Gain 0 −10 25˚C 25˚C VCE = −2 V Pulsed 100 −0.001 −0.01 −0.1 −1 IC - Collector Current - (A) R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 −10 −0.4 −0.8 −1.2 −1.6 VCE - Collector to Emitter Voltage - (V) 0 −10 −2 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 30IB −1 VBE(sat) −0.1 VCE(sat) −0.01 −0.001 −0.01 −0.1 −1 IC - Collector Current - (A) −10 Page 2 of 5 N0202R −1 1000 VCE = −6 V Pulsed fT - Gain Bandwidth Product - (MHz) IC - Collector Current - (A) −10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TA = 125˚C 25˚C −0.1 −25˚C −0.01 −0.001 VCE = −1 V 100 10 −1 Cob - Output Capacitance - (pF) 1000 −0.3 −0.6 −0.9 VBE - Base to Emitter Voltage - (V) −1.2 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE IE = 0 f = 1.0 MHz 100 10 1 −0.1 −1 −10 −100 VCB - Collector to Base Voltage - (V) R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 10000 tSW - Switching Time - (ns) −0.0001 −0.0 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT −10 −100 −1000 IC - Collector Current - (mA) −10000 SWITCHING TIME vs. COLLECTOR CURRENT VCE = −10 V IC = 30IB1 = −30IB2 PW = 50 μs ton 1000 tstg 100 tf 10 −10 −100 −1000 IC - Collector Current - (mA) −10000 Page 3 of 5 N0202R PACKAGE DRAWING (Unit: mm) 3 2 1 1: Emitter 2: Base 3: Collector R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 Page 4 of 5 Notice 1. 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