Jinan Jingheng EGP30G Super fast rectifier Datasheet

EGP30A THRU EGP30M
RC
P
G
S E M I C O N D U C T O R
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 400 Volts
Forward Current:3.0Amperes
SILICON
RECTIFIER
R
DO-201AD
FEATURES
GPRC( Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
JF
Low forward voltage drop,High current capability
1.0(25.4)
MIN
High surge current capability
Super fast recovery time
0.210(5.3)
0.190(4.8)
DIA
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026
1.0(25.4)
MIN
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052(1.32)
0.048(1.22)
DIA
Weight: 0.042ounce, 1.18 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead Length at Ta=55 C
I(AV)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
TA=25 C
EGP
30A
EGP
30B
EGP
30D
EGP
30F
EGP
30G
EGP
30J
EGP
30K
EGP
30M
50
100
200
300
400
600
800
1000
35
70
140
210
280
420
480
700
50
100
200
300
400
600
800
1000
115.0
1.0
1.25
Typical Junction Capacitance(Note2)
Operating Junction and Storage Temperature
Range
105.0
Amps
1.7
Volts
5.0
IR
A
100
TA=100 C
Maximum Reverse Recovery Time(Note1)
Volts
Volts
Volts
Amp
3.0
VF
Units
Trr
CJ
50
75
75
TJ
TSTG
-65 to+125
-65 to+150
ns
PF
C
Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.
8-20
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
(+)
50Vdc
(APPROX)
10
NON INDUCTIVE
+0.5A
PULSE
GENERATOR
(NOTE2)
D.U.T.
(-)
1
NON INDUCTIVE
AVERAGE FORWARD CURRENT (A)
FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50
NON INDUCTIVE
Trr
0
-0.25A
OSCILLOSCOPE
(NOTE1)
-1.0A
NOTES:1.Rise Time=7ns max. input impedance=1
megohm 22pF
2.Rise Time=10ns max. source impedance
=50 ohms
2.5
2.0
EGP30A-EGP30G
1.5
EGP30J-EGP30M
1.0
Single Phase Half Wave 60hz
Resistive or Inductive Load
0.375"(9.5mm) Lead Length
0.5
1cm
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT ,(mA)
INSTANTANEOUS FORWARD CURRENT( AMPERES)
3.0
SET TIME BASE FOR 5/10 ns/cm
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
EGP30A-EGP30F
EGP30G
EGP30J-EGP30M
1
TA=25 C
Pulse Width=300 s
1% Duty Cycle
0.1
SILICON
RECTIFIER
RATINGS AND CHARACTERISTIC CURVES EGP30A THRU EGP30M
100
TJ=100 C
10
1.0
TJ=25 C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
FIG.5-MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
FIG.6-TYPICAL JUNCTION CAPACITANCE
140
200
JUNCTION CAPACITANCE(pF)
PEAK FORWARD SURGE
CURRENT(AMPERES)
120
TA=25 C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
100
80
60
40
EGP30A-EGP30G
20
EGP30J-EGP30M
0
1
5
10
50
100
175
150
125
100
75
50
25
NUMBER OF CYCLES AT 60Hz
1
0.1
0.5
1
2
5
10
20
50
100
REVERSE VOLTAGE. (V)
8-21
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
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