® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Rev. 2.4 Description Initial Issue Revised VIL = 0.6V => 0.8V Revised Package Outline Dimension(TSOP-II) Added LL Spec. Revised Test Condition of ISB1/IDR Added -12ns Spec. Revised ICC and ISB1 Added I grade Revised ABSOLUTE MAXIMUN RATINGS Revised Test Condition of ICC Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Added package type TFBGA Revised ORDERING INFORMATION in page 12 Revised -12ns spec as -10ns spec and related parameter Revised ORDERING INFORMATION in page 11 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Mar.23.2006 Jun.9.2006 Apr.12.2007 Jun.25.2007 Apr.17.2009 May.6.2010 Aug.30.2010 July.03.2013 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 FEATURES GENERAL DESCRIPTION Fast access time : 10/15/20/25ns Low power consumption: Operating current : 215/140/110/100mA(MAX.) Standby current : 15mA(MAX. for 10ns) 3mA(MAX. for 15/20/25ns) 100µA( (MAX. for 15/20/25ns LL version) Single 5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA The LY6125616 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6125616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY6125616 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY6125616 LY6125616(I) LY6125616 LY6125616(E) LY6125616(I) LY6125616(LL) LY6125616(LLI) Operating Temperature 0 ~ 70℃ -40 ~ 85℃ 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ 0 ~ 70℃ -40 ~ 85℃ Vcc Range 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V Speed 10ns 10ns 15/20/25ns 15/20/25ns 15/20/25ns 15/20/25ns 15/20/25ns Power Dissipation Standby(ISB1) Operating(Icc) 15mA(MAX.) 215mA(MAX.) 15mA(MAX.) 215mA(MAX.) 3mA(MAX.) 140/110/100mA(MAX.) 3mA(MAX.) 140/110/100mA(MAX.) 3mA(MAX.) 140/110/100mA(MAX.) 100µA(MAX.) 140/110/100mA(MAX.) 100µA(MAX.) 140/110/100mA(MAX.) Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 PIN DESCRIPTION FUNCTIONAL BLOCK DIAGRAM Vcc Vss A0-A17 DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte CE# WE# OE# LB# UB# SYMBOL DESCRIPTION A0 - A17 Address Inputs DQ0 – DQ15 Data Inputs/Outputs DECODER I/O DATA CIRCUIT 256Kx16 MEMORY ARRAY CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground COLUMN I/O CONTROL CIRCUIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 PIN CONFIGURATION A LB# OE# A0 A1 B DQ8 UB# A3 A4 CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 A17 A7 DQ3 Vcc E Vcc DQ12 NC A16 DQ4 Vss F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 NC A12 A13 WE# DQ7 A10 H NC A8 A9 1 2 3 4 TFBGA A2 NC A11 NC 5 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 6.5 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# OE# H L L L L L L L L X H X L L L X X X WE# LB# X H X H H H L L L X X H L H L L H L I/O OPERATION DQ0-DQ7 DQ8-DQ15 High – Z High – Z High – Z High – Z High – Z High – Z DOUT High – Z DOUT High – Z DOUT DOUT DIN High – Z DIN High – Z DIN DIN UB# X X H H L L H L L SUPPLY CURRENT ISB1 ICC ICC ICC H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -4mA Output Low Voltage VOL IOL = 8mA 10 Cycle time = Min. 15 Average Operating ICC CE# = VIL , II/O = 0mA Power supply Current 20 Others at VIL or VIH 25 10 Standby Power CE# ≧VCC - 0.2V 15/20/25 ISB1 Supply Current Others at 0.2V / VCC-0.2V 15/20/25LL MIN. 4.5 2.2 - 0.3 -1 TYP. 5.0 - *4 MAX. 5.5 VCC+0.3 0.8 1 UNIT V V V µA -1 - 1 µA 2.4 - 100 80 75 0.1 20 0.4 215 140 110 100 15 5 3* 6 100* V V mA mA mA mA mA mA µA Notes: 1. VIH(max) = VCC + 2.0V for pulse width less than 6ns. 2. VIL(min) = VSS - 2.0V for pulse width less than 6ns. 3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. 1mA for special request 6. 50µA for special request Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 8 10 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM. LY6125616-10 LY6125616-15 LY6125616-20 LY6125616-25 UNIT MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time tRC 10 15 20 25 ns Address Access Time tAA 10 15 20 25 ns Chip Enable Access Time tACE 10 15 20 25 ns Output Enable Access Time tOE 5 7 8 9 ns Chip Enable to Output in Low-Z tCLZ* 2 4 4 4 ns Output Enable to Output in Low-Z tOLZ* 0 0 0 0 ns Chip Disable to Output in High-Z tCHZ* 5 7 8 9 ns Output Disable to Output in High-Z tOHZ* 5 7 8 9 ns Output Hold from Address Change tOH 3 3 3 3 ns LB#, UB# Access Time tBA 5 7 8 9 ns LB#, UB# to High-Z Output tBHZ* 5 7 8 9 ns LB#, UB# to Low-Z Output tBLZ* 2 4 4 4 ns (2) WRITE CYCLE PARAMETER SYM. LY6125616-10 LY6125616-15 LY6125616-20 LY6125616-25 UNIT MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Write Cycle Time tWC 10 15 20 25 ns Address Valid to End of Write tAW 8 12 16 20 ns Chip Enable to End of Write tCW 8 12 16 20 ns Address Set-up Time tAS 0 0 0 0 ns Write Pulse Width tWP 8 10 11 12 ns Write Recovery Time tWR 0 0 0 0 ns Data to Write Time Overlap tDW 6 8 9 10 ns Data Hold from End of Write Time tDH 0 0 0 0 ns Output Active from End of Write tOW* 2 4 5 6 ns Write to Output in High-Z tWHZ* 6 8 9 10 ns LB#, UB# Valid to End of Write tBW 8 12 16 20 ns *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE LB#,UB# tBA OE# tOE tOH tOHZ tBHZ tCHZ tOLZ tBLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE#is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low. 3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tBW LB#,UB# tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6) tWC Address tAW tWR CE# tAS tCW tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.WE#,CE#, LB#, UB# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. VCC for Data Retention VDR CE# ≧ VCC - 0.2V 2.0 10 VCC = 2.0V 15/20/25 Data Retention Current IDR CE# ≧ VCC - 0.2V other pins at 0.2V or VCC-0.2V 15/20/25LL See Data Retention Chip Disable to Data 0 tCDR Waveforms (below) Retention Time Recovery Time tR tRC* tRC* = Read Cycle Time DATA RETENTION WAVEFORM VDR ≧ 2.0V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 TYP. MAX. UNIT 5.5 V 10 mA 0.05 2 mA 10 50 µA - - ns - - ns ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 3 6 0 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY6125616 Rev. 2.4 5V 256K X 16 BIT HIGH SPEED CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 ORDERING INFORMATION Package Type 44Pin(400mil) TSOP-II Access Time (Speed)(ns) 10 Temperature Range(℃) 0℃~70℃ -40℃~85℃ 15 0℃~70℃ Packing Type Lyontek Item No. Tray LY6125616ML-10 Tape Reel LY6125616ML-10T Tray LY6125616ML-10I Tape Reel LY6125616ML-10IT Tray LY6125616ML-15 LY6125616ML-15LL Tape Reel LY6125616ML-15T LY6125616ML-15LLT -20℃~80℃ -40℃~85℃ Tray LY6125616ML-15E Tape Reel LY6125616ML-15ET Tray LY6125616ML-15I LY6125616ML-15LLI Tape Reel LY6125616ML-15IT LY6125616ML-15LLIT 20 Tray 0℃~70℃ LY6125616ML-20 LY6125616ML-20LL Tape Reel LY6125616ML-20T LY6125616ML-20LLT -20℃~80℃ -40℃~85℃ Tray LY6125616ML-20E Tape Reel LY6125616ML-20ET Tray LY6125616ML-20I LY6125616ML-20LLI Tape Reel LY6125616ML-20IT LY6125616ML-20LLIT 25 Tray 0℃~70℃ LY6125616ML-25I LY6125616ML-25LLI Tape Reel LY6125616ML-25IT LY6125616ML-25LLIT -20℃~80℃ -40℃~85℃ Tray LY6125616ML-25E Tape Reel LY6125616ML-25ET Tray LY6125616ML-25I LY6125616ML-25LLI Tape Reel LY6125616ML-25IT LY6125616ML-25LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY6125616 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Rev. 2.4 Package Type 48-ball(6mmx8mm) TFBGA Access Time (Speed)(ns) 10 Temperature Range(℃) 0℃~70℃ -40℃~85℃ 15 0℃~70℃ Packing Type Lyontek Item No. Tray LY6125616GL-10 Tape Reel LY6125616GL-10T Tray LY6125616GL-10I Tape Reel LY6125616GL-10IT Tray LY6125616GL-15 LY6125616GL-15LL Tape Reel LY6125616GL-15T LY6125616GL-15LLT -20℃~80℃ -40℃~85℃ Tray LY6125616GL-15E Tape Reel LY6125616GL-15ET Tray LY6125616GL-15I LY6125616GL-15LLI Tape Reel LY6125616GL-15IT LY6125616GL-15LLIT 20 Tray 0℃~70℃ LY6125616GL-20 LY6125616GL-20LL Tape Reel LY6125616GL-20T LY6125616GL-20LLT -20℃~80℃ -40℃~85℃ Tray LY6125616GL-20E Tape Reel LY6125616GL-20ET Tray LY6125616GL-20I LY6125616GL-20LLI Tape Reel LY6125616GL-20IT LY6125616GL-20LLIT 25 Tray 0℃~70℃ LY6125616GL-25 LY6125616GL-25LL Tape Reel LY6125616GL-25T LY6125616GL-25LLT -20℃~80℃ -40℃~85℃ Tray LY6125616GL-25E Tape Reel LY6125616GL-25ET Tray LY6125616GL-25I LY6125616GL-25LLI Tape Reel LY6125616GL-25IT LY6125616GL-25LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 ® LY6125616 Rev. 2.4 5V 256K X 16 BIT HIGH SPEED CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13