IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC 60 RDS(on) (Ω) VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G G D S COMPLIANT DESCRIPTION D TO-220 FULLPAK Available RoHS* S N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRLIZ14GPbF SiHLIZ14G-E3 IRLIZ14G SiHLIZ14G Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VDS VGS VGS at 5.0 V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS PD dV/dt TJ, Tstg LIMIT 60 ± 10 8.0 5.7 32 0.18 39.5 27 4.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, RG = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91315 S09-0896-Rev. B, 25-May-09 www.vishay.com 1 IRLIZ14G, SiHLIZ14G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 5.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 60 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 10 V - - ± 100 VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5.0 V ID = 4.8 Ab - - 0.20 VGS = 4.0 V Ab - - 0.28 3.6 - - - 400 - - 170 - - 42 - - 12 - ID = 4.0 VDS = 25 V, ID = 4.8 Ab µA Ω S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 C Total Gate Charge Qg Gate-Source Charge Qgs f = 1.0 MHz VGS = 5.0 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b - - 8.4 - - 3.5 Gate-Drain Charge Qgd - - 6.0 Turn-On Delay Time td(on) - 9.3 - - 110 - - 17 - - 26 - - 4.5 - - 7.5 - - - 8.0 - - 32 - - 1.6 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 30 V, ID = 10 A, RG = 12 Ω, RD= 2.8 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb V - 65 130 ns - 0.33 0.65 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91315 S09-0896-Rev. B, 25-May-09 IRLIZ14G, SiHLIZ14G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC= 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91315 S09-0896-Rev. B, 25-May-09 www.vishay.com 3 IRLIZ14G, SiHLIZ14G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91315 S09-0896-Rev. B, 25-May-09 IRLIZ14G, SiHLIZ14G Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 5V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - I AS V DD VDS 5V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91315 S09-0896-Rev. B, 25-May-09 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRLIZ14G, SiHLIZ14G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 5V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91315 S09-0896-Rev. B, 25-May-09 IRLIZ14G, SiHLIZ14G Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91315. Document Number: 91315 S09-0896-Rev. B, 25-May-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1