NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.0 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS(on) (TYP) @ 1 A 600 V 4.0 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDP NDD Drain−to−Source Voltage VDSS Continuous Drain Current RqJC ID 2.4 (Note 1) 2.4 2.2 A Continuous Drain Current RqJC TA = 100°C ID 1.6 (Note 1) 1.6 1.4 A IDM 10 (Note 1) 10 9 A Power Dissipation RqJC PD 24 72 57 W Gate−to−Source Voltage VGS 30 V Single Pulse Avalanche Energy, ID = 2.4 A EAS 120 mJ ESD (HBM) (JESD 22−A114) Vesd 2500 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 17) VISO Peak Diode Recovery dv/dt 4.5 (Note 2) V/ns Continuous Source Current (Body Diode) IS 2.4 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Pulsed Drain Current, VGS @ 10 V 600 Unit D (2) G (1) 4500 S (3) 4 V 4 © Semiconductor Components Industries, LLC, 2010 1 2 1 1 3 2 2 3 3 3 DPAK TO−220FP TO−220AB IPAK CASE 221D CASE 221A CASE 369D CASE 369AA STYLE 2 STYLE 1 STYLE 5 STYLE 2 1 2 MARKING AND ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C April, 2010 − Rev. 2 N−Channel V 1 See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Publication Order Number: NDF02N60Z/D NDF02N60Z, NDP02N60Z, NDD02N60Z THERMAL RESISTANCE Parameter Symbol Value Unit NDP02N60Z NDF02N60Z NDD02N60Z RqJC 1.7 5.2 2.2 °C/W (Note 3) NDP02N60Z (Note 3) NDF02N60Z (Note 4) NDD02N60Z (Note 3) NDD02N60Z−1 RqJA 51 51 41 80 Junction−to−Case (Drain) Junction−to−Ambient Steady State 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min VGS = 0 V, ID = 1 mA BVDSS 600 Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current 25°C VDS = 600 V, VGS = 0 V Gate−to−Source Forward Leakage V 0.6 IDSS V/°C 1 150°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 1.0 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 50 mA VGS(th) Forward Transconductance VDS = 15 V, ID = 1.2 A gFS 1.7 S Ciss 274 pF Coss 34 Crss 7.0 Qg 10.1 ±10 mA 4.8 W 4.5 V ON CHARACTERISTICS (Note 5) 4.0 3.0 DYNAMIC CHARACTERISTICS Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDD = 300 V, ID = 2.4 A, VGS = 10 V Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge Plateau Voltage VDD = 300 V, ID = 2.4 A, VOS = 10 V Gate Resistance nC Qgs 2.4 Qgd 5.3 VGP 6.4 V Rg 4.9 W td(on) 9.0 ns tr 7.0 td(off) 15 tf 7.0 RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 300 V, ID = 2.4 A, VGS = 10 V, RG = 5 W Fall Time SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 2.4 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 2.4 A, di/dt = 100 A/ms trr 240 ns Qrr 0.7 mC Reverse Recovery Charge 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 1.6 V NDF02N60Z, NDP02N60Z, NDD02N60Z TYPICAL CHARACTERISTICS 4.0 4.0 3.5 7.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 3.5 3.0 VGS = 10 V 2.5 6.5 V 2.0 6.0 V 1.5 1.0 5.5 V 0.5 0.0 0.0 VDS = 25 V 3.0 2.5 2.0 1.5 TJ = 25°C 1.0 TJ = 150°C 0.5 5.0 V 5.0 10.0 15.0 20.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 25.0 0.0 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 6.00 ID = 1 A TJ = 25°C 5.50 5.25 5.00 4.75 4.50 4.25 4.00 3.75 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 VGS, GATE−TO−SOURCE VOLTAGE (V) BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Region versus Gate−to−Source Voltage 2.50 2.25 2.00 ID = 1 A VGS = 10 V 1.75 1.50 1.25 1.00 0.75 0.50 0.25 −50 −25 0 25 50 75 100 125 10 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 5.75 TJ = −55°C 150 TJ, JUNCTION TEMPERATURE (°C) 5.25 5.00 VGS = 10 V TJ = 25°C 4.75 4.50 4.25 4.00 3.75 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 ID, DRAIN CURRENT (A) Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.15 ID = 1 mA 1.10 1.05 1.00 0.95 0.90 −50 Figure 5. On−Resistance Variation with Temperature −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. BVDSS Variation with Temperature http://onsemi.com 3 2.5 150 NDF02N60Z, NDP02N60Z, NDD02N60Z TYPICAL CHARACTERISTICS 600 10 550 TJ = 25°C VGS = 0 V f = 1 MHz C, CAPACITANCE (pF) TJ = 150°C 1.0 TJ = 125°C 450 400 350 300 Ciss 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 450 500 550 600 0 5 10 15 20 25 30 35 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current versus Voltage Figure 8. Capacitance Variation VGS, GATE−TO−SOURCE VOLTAGE (V) 0.10 Coss Crss 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 350 QT 300 VDS 250 VGS QGS 200 QGD 150 VDS = 300 V ID = 2.4 A TJ = 25°C 0 1 2 3 4 5 6 7 8 9 10 100 50 0 11 45 50 1.1 1.2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IDSS, LEAKAGE (mA) 500 Qg, TOTAL GATE CHARGE (nC) Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 10.0 1000 IS, SOURCE CURRENT (A) t, TIME (ns) VDD = 300 V ID = 2.4 A VGS = 10 V 100 td(off) tr tf td(on) 10 TJ = 150°C 1.0 125°C 25°C −55°C 1.0 1 10 0.1 0.3 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Resistive Switching Time Variation versus Gate Resistance Figure 11. Diode Forward Voltage versus Current http://onsemi.com 4 NDF02N60Z, NDP02N60Z, NDD02N60Z TYPICAL CHARACTERISTICS 100 VGS v 30 V SINGLE PULSE TC = 25°C 10 100 ms 1 ms 10 ms 1 dc 0.1 0.01 10 ms ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 100 1000 10 VGS v 30 V SINGLE PULSE TC = 25°C 1 ms 10 ms dc 1 0.1 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 ms 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Maximum Rated Forward Biased Safe Operating Area NDD02N60Z Figure 13. Maximum Rated Forward Biased Safe Operating Area NDF02N60Z 10 R(t) (C/W) 1 50% (DUTY CYCLE) 20% 10% 0.1 5% 2% 1% RqJC = 2.2°C/W Steady State SINGLE PULSE 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 PULSE TIME (s) Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z R(t) (C/W) 100 10 50% (DUTY CYCLE) 20% 10% 5.0% 1 2.0% 1.0% 0.1 0.01 1E−06 RqJA = 41°C/W Steady State SINGLE PULSE 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 PULSE TIME (s) Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z http://onsemi.com 5 1E+02 1E+03 NDF02N60Z, NDP02N60Z, NDD02N60Z 10 50% (DUTY CYCLE) R(t) (C/W) 1 20% 10% 5% 2% 0.1 1% RqJC = 5.2°C/W Steady State SINGLE PULSE 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 PULSE TIME (s) Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z LEADS HEATSINK 0.110″ MIN Figure 17. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 1E+02 1E+03 NDF02N60Z, NDP02N60Z, NDD02N60Z ORDERING INFORMATION Package Shipping† NDF02N60ZG TO−220FP (Pb−Free) 50 Units / Rail NDP02N60ZG TO−220AB (Pb−Free) 50 Units / Rail In Development NDD02N60Z−1G IPAK (Pb−Free) 75 Units / Rail NDD02N60ZT4G DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS NDF02N60ZG or NDP02N60ZG AYWW Gate Source 1 2 3 Gate Drain Source Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package http://onsemi.com 7 4 Drain YWW 2N 60ZG YWW 2N 60ZG 4 Drain 2 1 Drain 3 Gate Source NDF02N60Z, NDP02N60Z, NDD02N60Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. S Q A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B TO−220AB CASE 221A−09 ISSUE AE −T− B F T SEATING PLANE C S A U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE Y M INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 DIM A B C D F G H J K L N Q R S U U J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. N http://onsemi.com 8 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NDF02N60Z, NDP02N60Z, NDD02N60Z PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A S 1 2 DIM A B C D E F G H J K R S V Z Z 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T DPAK CASE 369AA−01 ISSUE A −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− NDF02N60Z, NDP02N60Z, NDD02N60Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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