ON NDF02N60Z N-channel power mosfet 600 v, 4.0 Datasheet

NDF02N60Z, NDP02N60Z,
NDD02N60Z
N-Channel Power MOSFET
600 V, 4.0 W
Features
•
•
•
•
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Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
VDSS
RDS(on) (TYP) @ 1 A
600 V
4.0 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
NDF
NDP
NDD
Drain−to−Source Voltage
VDSS
Continuous Drain Current
RqJC
ID
2.4
(Note 1)
2.4
2.2
A
Continuous Drain Current
RqJC TA = 100°C
ID
1.6
(Note 1)
1.6
1.4
A
IDM
10
(Note 1)
10
9
A
Power Dissipation RqJC
PD
24
72
57
W
Gate−to−Source Voltage
VGS
30
V
Single Pulse Avalanche
Energy, ID = 2.4 A
EAS
120
mJ
ESD (HBM)
(JESD 22−A114)
Vesd
2500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 2)
V/ns
Continuous Source Current
(Body Diode)
IS
2.4
A
Maximum Temperature for
Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Pulsed Drain Current, VGS
@ 10 V
600
Unit
D (2)
G (1)
4500
S (3)
4
V
4
© Semiconductor Components Industries, LLC, 2010
1 2
1
1
3
2
2
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
1
2
MARKING AND ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
April, 2010 − Rev. 2
N−Channel
V
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NDF02N60Z/D
NDF02N60Z, NDP02N60Z, NDD02N60Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
NDP02N60Z
NDF02N60Z
NDD02N60Z
RqJC
1.7
5.2
2.2
°C/W
(Note 3) NDP02N60Z
(Note 3) NDF02N60Z
(Note 4) NDD02N60Z
(Note 3) NDD02N60Z−1
RqJA
51
51
41
80
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 1.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 50 mA
VGS(th)
Forward Transconductance
VDS = 15 V, ID = 1.2 A
gFS
1.7
S
Ciss
274
pF
Coss
34
Crss
7.0
Qg
10.1
±10
mA
4.8
W
4.5
V
ON CHARACTERISTICS (Note 5)
4.0
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDD = 300 V, ID = 2.4 A,
VGS = 10 V
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
VDD = 300 V, ID = 2.4 A, VOS = 10 V
Gate Resistance
nC
Qgs
2.4
Qgd
5.3
VGP
6.4
V
Rg
4.9
W
td(on)
9.0
ns
tr
7.0
td(off)
15
tf
7.0
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 2.4 A,
VGS = 10 V, RG = 5 W
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 2.4 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 2.4 A, di/dt = 100 A/ms
trr
240
ns
Qrr
0.7
mC
Reverse Recovery Charge
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF02N60Z, NDP02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
4.0
4.0
3.5
7.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
3.5
3.0
VGS = 10 V
2.5
6.5 V
2.0
6.0 V
1.5
1.0
5.5 V
0.5
0.0
0.0
VDS = 25 V
3.0
2.5
2.0
1.5
TJ = 25°C
1.0
TJ = 150°C
0.5
5.0 V
5.0
10.0
15.0
20.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25.0
0.0
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
6.00
ID = 1 A
TJ = 25°C
5.50
5.25
5.00
4.75
4.50
4.25
4.00
3.75
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 3. On−Region versus Gate−to−Source
Voltage
2.50
2.25
2.00
ID = 1 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
10
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
5.75
TJ = −55°C
150
TJ, JUNCTION TEMPERATURE (°C)
5.25
5.00
VGS = 10 V
TJ = 25°C
4.75
4.50
4.25
4.00
3.75
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
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3
2.5
150
NDF02N60Z, NDP02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
600
10
550
TJ = 25°C
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
TJ = 150°C
1.0
TJ = 125°C
450
400
350
300
Ciss
250
200
150
100
50
0
0
50 100 150 200 250 300 350 400 450 500 550 600
0
5
10
15
20
25
30
35
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
Figure 8. Capacitance Variation
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.10
Coss
Crss
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
350
QT
300
VDS
250
VGS
QGS
200
QGD
150
VDS = 300 V
ID = 2.4 A
TJ = 25°C
0
1
2
3
4
5
6
7
8
9
10
100
50
0
11
45
50
1.1
1.2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
500
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
10.0
1000
IS, SOURCE CURRENT (A)
t, TIME (ns)
VDD = 300 V
ID = 2.4 A
VGS = 10 V
100
td(off)
tr
tf
td(on)
10
TJ = 150°C
1.0
125°C
25°C
−55°C
1.0
1
10
0.1
0.3
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF02N60Z, NDP02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
100
VGS v 30 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
10 ms
1
dc
0.1
0.01
10 ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
dc
1
0.1
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100 ms
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD02N60Z
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF02N60Z
10
R(t) (C/W)
1
50% (DUTY CYCLE)
20%
10%
0.1
5%
2%
1%
RqJC = 2.2°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
R(t) (C/W)
100
10 50% (DUTY CYCLE)
20%
10%
5.0%
1
2.0%
1.0%
0.1
0.01
1E−06
RqJA = 41°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
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5
1E+02
1E+03
NDF02N60Z, NDP02N60Z, NDD02N60Z
10
50% (DUTY CYCLE)
R(t) (C/W)
1
20%
10%
5%
2%
0.1
1%
RqJC = 5.2°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 17. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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6
1E+02
1E+03
NDF02N60Z, NDP02N60Z, NDD02N60Z
ORDERING INFORMATION
Package
Shipping†
NDF02N60ZG
TO−220FP
(Pb−Free)
50 Units / Rail
NDP02N60ZG
TO−220AB
(Pb−Free)
50 Units / Rail
In Development
NDD02N60Z−1G
IPAK
(Pb−Free)
75 Units / Rail
NDD02N60ZT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF02N60ZG
or
NDP02N60ZG
AYWW
Gate
Source
1 2 3
Gate Drain Source
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
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7
4
Drain
YWW
2N
60ZG
YWW
2N
60ZG
4
Drain
2
1 Drain 3
Gate Source
NDF02N60Z, NDP02N60Z, NDD02N60Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
S
Q
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220AB
CASE 221A−09
ISSUE AE
−T−
B
F
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
U
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
N
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8
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NDF02N60Z, NDP02N60Z, NDD02N60Z
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
Z
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
DPAK
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
9
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NDF02N60Z, NDP02N60Z, NDD02N60Z
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NDF02N60Z/D
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