JIEJIE JST136C-600D 4a triac Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JST136 Series
4A TRIACs
Rev.3.0
DESCRIPTION:
2
JST136 series triacs with low holding and latching
current are especially recommended for use on
middle and small resistance type power load.
JST136F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
12
1
3
TO-251
12
12
3 TO-220B
Non-Insulated
3
3
TO-252
TO-220C
T1(1)
MAIN FEATURES
G(3)
Symbol
Value
Unit
IT(RMS)
4
A
VDRM/VRRM
600 and 800
V
12
3
TO-220F
Insulated
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage(Tj=25℃)
VDRM
600/800
V
Repetitive peak reverse voltage(Tj=25℃)
VRRM
600/800
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM + 100
V
Non repetitive peak reverse voltage
VRSM
VRRM + 100
V
IT(RMS)
4
A
ITSM
25
A
I2t
3.1
A2s
Storage junction temperature range
Operating junction temperature range
TO-251/ TO-252
(TC=110℃)
TO-220B(Non-Ins)/
RMS on-state current
TO-220C(TC=107℃)
TO-220F(Ins)
(TC=90℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state
current (IG=2×IGT)
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Ⅰ-Ⅱ-Ⅲ
Ⅳ
- 1 / 7-
50
dI/dt
A/μs
10
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JST136 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
Average gate power dissipation
Peak gate power
IGM
2
A
PG(AV)
0.5
W
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
Ⅰ-Ⅱ-Ⅲ
IGT
Ⅳ
VD=12V
VGT
VGD
VD=VDRM Tj=125℃
RL=3.3KΩ
F
5
10
25
10
25
70
mA
ALL
MAX
1.5
V
ALL
MIN
0.2
V
20
30
40
35
45
60
MAX
15
25
30
mA
VD=2/3VDRM Gate Open Tj=125℃
MIN
5
50
50
V/μs
(dI/dt)c=1.7A/ms Tj=125℃
MIN
0.1
0.5
5
V/μs
IG=1.2IGT
IH
IT=100mA
(dV/dt)c
E
MAX
Ⅰ-Ⅲ-Ⅳ
IL
dV/dt
D
Ⅱ
MAX
mA
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=5.5A tp=380μs
VD=VDRM VR=VRRM
Value(MAX)
Unit
Tj=25℃
1.7
V
Tj=25℃
10
μA
Tj=125℃
1
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
junction to case(AC)
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TO-251/ TO-252
4.0
TO-220B(Non-Ins)/
TO-220C
3.0
TO-220F(Ins)
3.3
- 2 / 7-
℃/W
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JST136 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J
ST
136
B
-600
E
T:IGT1-4≤5mA
D:IGT1-3≤5mA IGT4≤10mA
E:IGT1-3≤10mA IGT4≤25mA
C:IGT1-3≤25mA IGT4≤50mA
JieJie Microelectronics Co.,Ltd
TRIACs
IT(RMS):4A
C:TO-220C
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
H:TO-251 K:TO-252
600:VDRM/VRRM≥600V
800:VDRM/VRRM≥800V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
ax
E
M
A
C2
D
V1
L3
H
JIE
C3
L1
Millimeters
Min.
F
Φ
mm
3.8
L2
TO-220B Non-Ins
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Min.
Typ.
Max.
4.60
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.60
10.4
0.378
0.409
F
6.20
6.60
0.244
0.260
H
C
Max.
4.40
2.54
G
B
Inches
A
28.0
L2
1.14
L3
2.65
V1
- 3 / 7-
0.1
29.8
1.102
3.75
L1
G
Typ.
45°
1.173
0.148
1.70
0.045
2.95
0.104
0.067
0.116
45°
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JST136 Series
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PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
A
B2
D
V1
H
V1
L2
C2
V1
L1
L
B3
C
B
A2
2.40
0.086
0.095
A2
0.90
1.20
0.035
0.047
B
0.55
0.65
0.022
0.026
B2
5.10
5.40
0.200
0.213
B3
0.76
0.85
0.030
0.033
Max.
C
0.45
0.62
0.018
0.024
C2
0.48
0.62
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
2.30
0.264
0.091
H
16.0
17.0
0.630
0.669
L
8.90
9.40
0.350
0.370
L1
1.80
1.90
0.071
0.075
L2
1.37
1.50
0.054
4°
V1
TO-251
Typ.
2.20
G
G
Inches
Min.
A
E
Typ.
Max.
Min.
0.059
4°
Dimensions
Ref.
Millimeters
E
A
C
0.6 M
IN
A2
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V2
D
V1
V1
L1
H
L2
B
V1
G
2.20
2.40
0.086
0.095
A2
0.03
0.23
0.001
0.009
B
0.55
0.65
0.022
0.026
B2
5.10
5.40
0.200
0.213
C
0.45
0.62
0.018
0.024
C2
0.48
0.62
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
0.264
G
4.40
4.70
0.173
0.185
Max.
H
9.35
10.6
0.368
0.417
L1
1.30
1.70
0.051
0.067
L2
1.37
1.50
0.054
4°
V1
TO-252
Typ.
Min.
A
C2
Inches
Max.
Min.
B2
Typ.
V2
- 4 / 7-
0°
0.059
4°
8°
0°
8°
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JST136 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
E
Millimeters
Min.
A
C2
H
D
L3
F
Φ
Ref.
m
.6m
3
x
Ma
L1
C3
L2
TO-220C
Min.
Typ.
Max.
4.60
0.173
0.181
B
0.70
0.90
0.028
0.035
C
0.45
0.60
0.018
0.024
C2
1.23
1.32
0.048
0.052
C3
2.20
2.60
0.087
0.102
D
8.90
9.90
0.350
0.390
E
9.90
10.3
0.390
0.406
F
6.30
6.90
0.248
0.272
29.8
1.102
2.54
28.0
0.1
3.39
L1
C
Max.
4.40
H
B
Inches
A
G
G
Typ.
1.173
0.133
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
Φ
3.6
Ref.
Millimeters
0.142
Dimensions
E
3.
Min.
A
C2
F
L3
Φ
ax
M
m
5m
H
D
V1
L1
C3
L2
A
4.40
B
0.74
TO-220F Ins
TEL:+86-513-83639777
0.83
0.029
Typ.
Max.
0.189
0.031
0.033
0.48
0.75
0.019
0.030
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
29.8
1.102
2.54
28.0
0.1
3.63
L1
L2
G
Min.
0.173
C
H
C
0.80
Max.
4.80
C2
G
B
Typ.
Inches
0.143
1.70
1.14
1.173
0.045
0.067
L3
3.30
0.130
V1
45°
45°
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JST136 Series
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FIG.1 Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
6
IT(RMS) (A)
6
5
5
4
4
3
3
2
2
P(w)
1
0
α=180°
TO-220C/
TO-220B(Non-Ins) TO-251/
TO-252
TO-220F(Ins)
1
IT(RMS) (A)
0
1
2
3
4
Tc (℃)
0
0
5
FIG.3: Surge peak on-state current versus
number of cycles
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
30
28
t=20ms
One cycle
24
Tj=Tjmax
10
20
16
12
1
8
Tj=25℃
4
0
1
10
Number of cycles
100
0.1
0
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms and
corresponding value of I t (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs;
Ⅳ:dI/dt < 10A/μs)
1
2
VTM (V)
3
4
5
FIG.6: Relative variations of gate trigger current
versus junction temperature
2
ITSM (A), I2 t (A2 s)
300
100
IGT(Tj)/IGT(Tj=25℃)
3.5
3.0
ITSM
IGT3
dI/dt(Ⅰ-Ⅱ-Ⅲ)
IGT4
2.5
2.0
dI/dt(Ⅳ)
IGT1
1.5
10
1.0
2
It
1
0.01
0.5
tp(ms)
0.1
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1
10
20
- 6 / 7-
0.0
-40
IGT2
Tj(℃)
-20
0
20
40
60
80
100
120
140
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JST136 Series
JieJie Microelectronics CO. , Ltd
FIG.7: Relative variations of holding current
versus junction temperature
FIG.8: Relative variations of latching current
versus junction temperature
IH(Tj)/IH(Tj=25℃)
3.0
IL(Tj)/IL(Tj=25℃)
3.5
2.5
3.0
IL4
2.5
2.0
2.0
1.5
IH1&IH3
1.5
1.0
0.5
0.0
-40
IL1&IL2&IL3
1.0
0.5
Tj(℃)
-20
0
20
40
60
80
100
120
140
0.0
-40
Tj(℃)
-20
0
20
40
60
80
100
120
140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
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Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 10-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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