JIEJIE MICROELECTRONICS CO. , Ltd JST136 Series 4A TRIACs Rev.3.0 DESCRIPTION: 2 JST136 series triacs with low holding and latching current are especially recommended for use on middle and small resistance type power load. JST136F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink complying with UL standards (File ref: E252906). 12 1 3 TO-251 12 12 3 TO-220B Non-Insulated 3 3 TO-252 TO-220C T1(1) MAIN FEATURES G(3) Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 and 800 V 12 3 TO-220F Insulated T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM + 100 V Non repetitive peak reverse voltage VRSM VRRM + 100 V IT(RMS) 4 A ITSM 25 A I2t 3.1 A2s Storage junction temperature range Operating junction temperature range TO-251/ TO-252 (TC=110℃) TO-220B(Non-Ins)/ RMS on-state current TO-220C(TC=107℃) TO-220F(Ins) (TC=90℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) TEL：+86-513-83639777 Ⅰ-Ⅱ-Ⅲ Ⅳ - 1 / 7- 50 dI/dt A/μs 10 http://www.jjwdz.com JST136 Series JieJie Microelectronics CO. , Ltd Peak gate current Average gate power dissipation Peak gate power IGM 2 A PG(AV) 0.5 W PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol Test Condition Quadrant Unit Ⅰ-Ⅱ-Ⅲ IGT Ⅳ VD=12V VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ F 5 10 25 10 25 70 mA ALL MAX 1.5 V ALL MIN 0.2 V 20 30 40 35 45 60 MAX 15 25 30 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 5 50 50 V/μs (dI/dt)c=1.7A/ms Tj=125℃ MIN 0.1 0.5 5 V/μs IG=1.2IGT IH IT=100mA (dV/dt)c E MAX Ⅰ-Ⅲ-Ⅳ IL dV/dt D Ⅱ MAX mA STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=5.5A tp=380μs VD=VDRM VR=VRRM Value(MAX) Unit Tj=25℃ 1.7 V Tj=25℃ 10 μA Tj=125℃ 1 mA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(AC) TEL：+86-513-83639777 TO-251/ TO-252 4.0 TO-220B(Non-Ins)/ TO-220C 3.0 TO-220F(Ins) 3.3 - 2 / 7- ℃/W http://www.jjwdz.com JST136 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION J ST 136 B -600 E T:IGT1-4≤5mA D:IGT1-3≤5mA IGT4≤10mA E:IGT1-3≤10mA IGT4≤25mA C:IGT1-3≤25mA IGT4≤50mA JieJie Microelectronics Co.,Ltd TRIACs IT(RMS):4A C:TO-220C F:TO-220F(Ins) B:TO-220B(Non-Ins) H:TO-251 K:TO-252 600:VDRM/VRRM≥600V 800:VDRM/VRRM≥800V PACKAGE MECHANICAL DATA Dimensions Ref. ax E M A C2 D V1 L3 H JIE C3 L1 Millimeters Min. F Φ mm 3.8 L2 TO-220B Non-Ins TEL：+86-513-83639777 Min. Typ. Max. 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 0.260 H C Max. 4.40 2.54 G B Inches A 28.0 L2 1.14 L3 2.65 V1 - 3 / 7- 0.1 29.8 1.102 3.75 L1 G Typ. 45° 1.173 0.148 1.70 0.045 2.95 0.104 0.067 0.116 45° http://www.jjwdz.com JST136 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. Millimeters A B2 D V1 H V1 L2 C2 V1 L1 L B3 C B A2 2.40 0.086 0.095 A2 0.90 1.20 0.035 0.047 B 0.55 0.65 0.022 0.026 B2 5.10 5.40 0.200 0.213 B3 0.76 0.85 0.030 0.033 Max. C 0.45 0.62 0.018 0.024 C2 0.48 0.62 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.70 0.252 2.30 0.264 0.091 H 16.0 17.0 0.630 0.669 L 8.90 9.40 0.350 0.370 L1 1.80 1.90 0.071 0.075 L2 1.37 1.50 0.054 4° V1 TO-251 Typ. 2.20 G G Inches Min. A E Typ. Max. Min. 0.059 4° Dimensions Ref. Millimeters E A C 0.6 M IN A2 TEL：+86-513-83639777 V2 D V1 V1 L1 H L2 B V1 G 2.20 2.40 0.086 0.095 A2 0.03 0.23 0.001 0.009 B 0.55 0.65 0.022 0.026 B2 5.10 5.40 0.200 0.213 C 0.45 0.62 0.018 0.024 C2 0.48 0.62 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.70 0.252 0.264 G 4.40 4.70 0.173 0.185 Max. H 9.35 10.6 0.368 0.417 L1 1.30 1.70 0.051 0.067 L2 1.37 1.50 0.054 4° V1 TO-252 Typ. Min. A C2 Inches Max. Min. B2 Typ. V2 - 4 / 7- 0° 0.059 4° 8° 0° 8° http://www.jjwdz.com JST136 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions E Millimeters Min. A C2 H D L3 F Φ Ref. m .6m 3 x Ma L1 C3 L2 TO-220C Min. Typ. Max. 4.60 0.173 0.181 B 0.70 0.90 0.028 0.035 C 0.45 0.60 0.018 0.024 C2 1.23 1.32 0.048 0.052 C3 2.20 2.60 0.087 0.102 D 8.90 9.90 0.350 0.390 E 9.90 10.3 0.390 0.406 F 6.30 6.90 0.248 0.272 29.8 1.102 2.54 28.0 0.1 3.39 L1 C Max. 4.40 H B Inches A G G Typ. 1.173 0.133 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 Φ 3.6 Ref. Millimeters 0.142 Dimensions E 3. Min. A C2 F L3 Φ ax M m 5m H D V1 L1 C3 L2 A 4.40 B 0.74 TO-220F Ins TEL：+86-513-83639777 0.83 0.029 Typ. Max. 0.189 0.031 0.033 0.48 0.75 0.019 0.030 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 29.8 1.102 2.54 28.0 0.1 3.63 L1 L2 G Min. 0.173 C H C 0.80 Max. 4.80 C2 G B Typ. Inches 0.143 1.70 1.14 1.173 0.045 0.067 L3 3.30 0.130 V1 45° 45° - 5 / 7- http://www.jjwdz.com JST136 Series JieJie Microelectronics CO. , Ltd FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 6 IT(RMS) (A) 6 5 5 4 4 3 3 2 2 P(w) 1 0 α=180° TO-220C/ TO-220B(Non-Ins) TO-251/ TO-252 TO-220F(Ins) 1 IT(RMS) (A) 0 1 2 3 4 Tc (℃) 0 0 5 FIG.3: Surge peak on-state current versus number of cycles 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 30 28 t=20ms One cycle 24 Tj=Tjmax 10 20 16 12 1 8 Tj=25℃ 4 0 1 10 Number of cycles 100 0.1 0 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms and corresponding value of I t (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs; Ⅳ:dI/dt < 10A/μs) 1 2 VTM (V) 3 4 5 FIG.6: Relative variations of gate trigger current versus junction temperature 2 ITSM (A), I2 t (A2 s) 300 100 IGT(Tj)/IGT(Tj=25℃) 3.5 3.0 ITSM IGT3 dI/dt(Ⅰ-Ⅱ-Ⅲ) IGT4 2.5 2.0 dI/dt(Ⅳ) IGT1 1.5 10 1.0 2 It 1 0.01 0.5 tp(ms) 0.1 TEL：+86-513-83639777 1 10 20 - 6 / 7- 0.0 -40 IGT2 Tj(℃) -20 0 20 40 60 80 100 120 140 http://www.jjwdz.com JST136 Series JieJie Microelectronics CO. , Ltd FIG.7: Relative variations of holding current versus junction temperature FIG.8: Relative variations of latching current versus junction temperature IH(Tj)/IH(Tj=25℃) 3.0 IL(Tj)/IL(Tj=25℃) 3.5 2.5 3.0 IL4 2.5 2.0 2.0 1.5 IH1&IH3 1.5 1.0 0.5 0.0 -40 IL1&IL2&IL3 1.0 0.5 Tj(℃) -20 0 20 40 60 80 100 120 140 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 10-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 7 / 7- http://www.jjwdz.com