M PL IA NT Features S CO ■ *R oH ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* Protects 4 lines Unidirectional & bidirectional configurations ESD protection > 40 KV ■ ■ ■ ■ Audio/video inputs RS-232, RS-422 & RS-423 data lines Portable electronics Medical sensors CDNBS08-T03~T36C – TVS Diode Array Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection applications, in 8 lead narrow body SOIC package size format. The Transient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. 8 7 6 5 1 2 3 4 8 7 6 5 1 2 3 4 Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Operating Temperature Storage Temperature Symbol Max. Unit TJ -55 to +150 °C TSTG -55 to +150 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) CDNBS08Parameter Symbol Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Unit T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C Breakdown Voltage @ 1 mA VBR 3.3 6.0 8.5 13.3 16.7 26.7 40.0 V Working Peak Voltage VWM 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V VF 4.0 9.8 13.4 19.0 24.0 43.0 51.0 V VF 10.9 V @ 43 A 13.5 V @ 42 A 16.9 V @ 34 A 25.9 V @ 27 A 30.0 V @ 17 A 49.0 V @ 12 A 76.8 V @9A V ID 125 20 10 1 1 1 1 µA C j(SD) 800 550 500 185 140 88 80 pF C j(SD) 450 308 300 105 80 50 45 pF Maximum Clamping Voltage VC @ IP1 Maximum Clamping Voltage @ 8/20 µs VC @ IPP1 Maximum Leakage Current @ VWM Maximum Cap Unidirectional @ 0 V, 1 MHz Maximum Cap Bidirectional @ 0 V, 1 MHz Peak Pulse Power (tp = 8/20 µs)2 PPP 500 W Forward Voltage @ 100 mA, 300 µs – Square Wave3 VF 1.5 V Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-T03~T36C – TVS Diode Array Series Product Dimensions Recommended Footprint This is a molded JEDEC narrow body SO-8 package with lead free 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a flammability rating of UL 94V-0. A B A F B D C H C G E Dimensions DIMENSIONS = MILLIMETERS (INCHES) D A 1.143 - 1.397 (0.045 - 0.055) B 0.635 - 0.889 (0.025 - 0.035) E 6.223 Min. (0.245) C Dimensions 4.80 - 5.00 (0.189 - 0.196) D A 3.937 - 4.191 (0.155 - 0.165) 3.80 - 4.00 (0.150 - 0.157) E B 1.016 - 1.27 (0.040 - 0.050) C 5.80 - 6.20 (0.229 - 0.244) D 1.35 - 1.75 (0.054 - 0.068) E 0.10 - 0.25 (0.004 - 0.008) F 0.25 - 0.50 (0.010 - 0.019) G 0.40 - 1.250 (0.016 - 0.049) H 0.18 - 0.25 (0.007 - 0.009) How To Order CD NBS08 - T 03 C Common Code Chip Diode Package • NBS08 = Narrow Body SOIC8 Package Model T = Transient Voltage Supressor Working Peak Voltage 3 = 3 VRWM (Volts) Suffix C = Bidirectional Diode *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-T03~T36C – TVS Diode Array Series Performance Graphs Peak Pulse Power vs Pulse Time Pulse Wave Form 120 IPP – Peak Pulse Current (% of IPP) PPP – Peak Pulse Power (kW) 10,000 500 W, 8/20 µs Waveform 1,000 100 Test Waveform Parameters tt = 8 µs td = 20 µs tt 100 80 et 60 40 td = t|IPP/2 20 0 10 0.01 1 10 100 1,000 0 10,000 10 5 Block Diagram Bidirectional 25 30 6 5 8 100 7 6 Peak Pulse Power 8/20 µs 5 % of Rated Power 7 20 Power Derating Curve Unidirectional 8 15 t – Time (µs) td – Pulse Duration (µs) 80 60 40 20 1 2 3 4 1 2 3 Average Power 4 0 0 25 50 75 100 TL – Lead Temperature (°C) Device Pinout Pin Function 1 I/O 1 2 I/O 2 3 I/O 3 4 I/O 4 5 GND 6 GND 7 GND 8 GND *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 125 150 CDNBS08-T03~T36C – TVS Diode Array Series Packaging The surface mount product is packaged in a 12 mm x 8 mm Tape and Reel format per EIA-481 standard. TOP SIDE VIEW (INTO COMPONENT POCKET) DIMENSIONS = MILLIMETERS (INCHES) 4.0 ± 0.1 (.16 ± .004) 0.3 ± 0.05 (.01 ± .002) 1.5 ± 0.1/-0 (.06 ± .004/-0) DIA. 2.0 ± 0.05 (.08 ± .002) R 1.75 ± 0.1 (.07 ± .004) 0.3 MAX. (0.01) 2.1 ± 0.1 (.083 ± .004) 12.0 ± 0.3 (.47 ± .01) 6.4 ± 0.1 (.252 ± .004) 5.5 ± 0.3 (.22 ± .01) 9.0 ± 0.1 (.354 ± .004) 8.0 ± 0.3 (.31 ± .01) ORIENTATION OF COMPONENT IN POCKET R 0.25 TYP. (0.010) BACKSIDE FACING UP Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A., IPA0501 04/05