KEC MMBTA63 Epitaxial planar pnp transistor Datasheet

SEMICONDUCTOR
MMBTA63/64
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
E
B
2
CHARACTERISTIC
Collector-Base
SYMBOL
RATING
UNIT
VCBO
-30
V
MMBTA63/64
Voltage
H
A
)
3
G
MAXIMUM RATING (Ta=25
L
D
L
1
VEBO
-10
V
DC
IC
-500
mA
Pulse
ICP
-1
A
PC *
350
mW
Tj
150
Tstg
-55 150
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* : Package Mounted On 99.5% Alumina 10 8
2. BASE
3. COLLECTOR
SOT-23
)
V(BR)CES
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
MMBTA63
M
0.6mm.
SYMBOL
Collector-Emitter Breakdown Voltage
MILLIMETERS
_ 0.20
2.93 +
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
1. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
J
V
K
-30
P
N
VCES
MMBTA63/64
Voltage
C
P
Collector-Emitter
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
TEST CONDITION
IC=-0.1mA, IB=0
VCB=-30V, IE=0
VEB=-10V, IC=0
MIN.
TYP.
MAX.
UNIT
-30
-
-
V
-
-
-0.1
A
-
-
-0.1
A
5,000
-
-
10,000
-
-
10,000
-
-
20,000
-
-
hFE(1)
IC=-10mA, VCE=-5V
hFE(2)
IC=-100mA, VCE=-5V
MMBTA63/64
VCE(sat)
IC=-100mA, IB=-0.1mA
-
-
-1.5
V
MMBTA63/64
VBE
IC=-100mA, VCE=-5V
-
-
-2.0
V
MMBTA63/64
fT
125
-
-
MHz
MMBTA64
DC Current Gain
MMBTA63
MMBTA64
Collector-Emitter
Saturation Voltage
Base Emitter
Voltage
Current Gain
Bandwith Product
IC=-10mA, f=100MHz
VCE=-5V
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
Marking
MARK SPEC
Lot No.
TYPE
MMBTA63
MMBTA64
MARK
AGX
AFX
2008. 8. 29
Revision No : 5
Type Name
A X
1/2
h FE - I C
DC CURRENT GAIN h FE
1M
VCE =-5V
300k
100k
30k
10k
3k
1k
-1
-3
-10
-30
-100
-300
-1k
CURRENT GAIN BANDWIDTH PRODUCT
f T (MHz)
MMBTA63/64
f T - IC
1k
VCE =-5V
300
100
30
10
3
1
-1
-3
COLLECTOR CURRENT I C (mA)
-10
COLLECTOR CURRENT I C (mA)
SATURATION VOLTAGE
VBE(sat) , VCE(sat) (V)
VBE(sat)
-1
V CE(sat)
-0.3
-0.1
-0.03
-0.01
-1k
-200
VCE =-5V
-100
-30
-10
-3
-1
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
2008. 8. 29
-300
I C - V BE
I C =1000I B
-3
-100
COLLECTOR CURRENT I C (mA)
VBE(sat) , VCE(sat) - I C
-10
-30
Revision No : 5
-1k
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
BASE-EMITTER VOLTAGE VBE (V)
2/2
Similar pages