MMBT9012 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT9013 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL -VCBO -VCEO -VEBO -IC Ptot Tj Tstg VALUE 40 30 5 500 200 150 - 55 to + 150 UNIT V V V mA mW ℃ ℃ Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 1 V, -IC = 50 mA SYMBOL Current Gain Group at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Voltage at -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA Website: www.kingtronics.com G H MIN. MAX. UNIT 100 160 40 250 400 - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CBO 40 - V -V(BR)CEO 30 - V -V(BR)EBO 5 - V -VCE(sat) - 0.6 V -VBE(sat) - 1.2 V -VBE - 1 V fT 100 - MHz hFE Email: [email protected] Tel: (852) 8106 7033 - Fax: (852) 8106 7099 1 MMBT9012 PNP Silicon Epitaxial Planar Transistors RATINGS AND CHARACTERISTIC CURVES MMBT9012 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2