Cypress CY7C1061AV33 16-mbit (1m x 16) static ram Datasheet

CY7C1061AV33
16-Mbit (1M x 16) Static RAM
Features
Functional Description
• High speed
The CY7C1061AV33 is a high performance CMOS Static RAM
organized as 1,048,576 words by 16 bits.
— tAA = 10 ns
• Low active power
To write to the device, enable the chip (CE1 LOW and CE2
HIGH) while forcing the Write Enable (WE) input LOW. If Byte
Low Enable (BLE) is LOW, then data from IO pins (IO0 through
IO7), is written into the location specified on the address pins
(A0 through A19). If Byte High Enable (BHE) is LOW, then data
from IO pins (IO8 through IO15) is written into the location
specified on the address pins (A0 through A19).
— 990 mW (max)
• Operating voltages of 3.3 ± 0.3V
• 2.0V data retention
• Automatic power down when deselected
• TTL compatible inputs and outputs
• Easy memory expansion with CE1 and CE2 features
• Available in Pb-free and non Pb-free 54-pin TSOP II
package and non Pb-free 60-ball fine pitch ball grid array
(FBGA) package
To read from the device, enable the chip by taking CE1 LOW
and CE2 HIGH while forcing the Output Enable (OE) LOW and
the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is
LOW, then data from the memory location specified by the
address pins will appear on IO0 to IO7. If Byte High Enable
(BHE) is LOW, then data from memory will appear on IO8 to
IO15. See “Truth Table” on page 7 for a complete description
of Read and Write modes.
The input/output pins (IO0 through IO15) are placed in a
high-impedance state when the device is deselected (CE1
HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the
BHE and BLE are disabled (BHE, BLE HIGH), or a Write
operation is in progress (CE1 LOW, CE2 HIGH, and WE LOW).
Logic Block Diagram
1M x 16
ARRAY
SENSE AMPS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
ROW DECODER
INPUT BUFFER
IO0–IO7
IO8–IO15
A10
A11
A 12
A 13
A 14
A 15
A 16
A 17
A18
A19
COLUMN
DECODER
BHE
WE
OE
BLE
Cypress Semiconductor Corporation
Document #: 38-05256 Rev. *G
•
198 Champion Court
•
CE2
CE1
San Jose, CA 95134-1709
•
408-943-2600
Revised March 26, 2007
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CY7C1061AV33
Selection Guide
–10
–12
Unit
10
12
ns
Commercial
275
260
mA
Industrial
275
260
Commercial/Industrial
50
50
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
mA
Pin Configurations [1, 2]
1
NC
2
60-ball FBGA
Top View
4
3
5
54-pin TSOP II
(Top View)
6
NC
NC
NC
NC
BLE
OE
A0
A1
A2
CE2
A
IO 8
BHE
A3
A4
CE1
IO 0
B
IO 9
IO 10
A5
A6
IO 1
IO 2
C
VSS
IO11
A17
A7
IO 3
VCC
D
VCC
IO 12
NC
A16
IO 4
VSS
E
IO 14
IO 13
A14
A15
IO 5
IO 6
F
IO 15 DNU
A12
A13
WE
IO 7
G
A9
A10
A11
A19
H
A18
A8
IO 12
VCC
IO 13
IO 14
VSS
IO 15
A4
A3
A2
A1
A0
BHE
CE1
VCC
WE
CE2
A19
A18
A17
A16
A15
IO 0
VCC
IO 1
IO 2
VSS
IO 3
1
2
3
54
53
4
52
51
5
6
50
49
7
8
9
10
11
12
48
47
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
IO 11
VSS
IO 10
IO 9
VCC
IO 8
A5
A6
A7
A8
A9
NC
OE
VSS
DNU
BLE
A10
A11
A12
A13
A14
IO 7
VSS
IO 6
IO 5
VCC
IO 4
NC
NC
NC
NC
NC
NC
NC
Notes
1. NC pins are not connected on the die.
2. DNU (Do Not Use) pins have to be left floating or tied to VSS to ensure proper operation.
Document #: 38-05256 Rev. *G
Page 2 of 10
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CY7C1061AV33
Maximum Ratings
DC Input Voltage [3] ............................... –0.5V to VCC + 0.5V
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Current into Outputs (LOW)......................................... 20 mA
Storage Temperature ................................. –65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Range
Ambient
Temperature
VCC
Supply Voltage on VCC to Relative GND [3] ... –0.5V to +4.6V
Commercial
0°C to +70°C
3.3V ± 0.3V
DC Voltage Applied to Outputs
in High-Z State [3] ...................................–0.5V to VCC + 0.5V
Industrial
–40°C to +85°C
DC Electrical Characteristics (Over the Operating Range)
Parameter
Description
–10
Test Conditions
VOH
Output HIGH Voltage
IOH = –4.0 mA
VOL
Output LOW Voltage
IOL = 8.0 mA
VIH
Input HIGH Voltage
Min
–12
Max
2.4
Min
Unit
Max
2.4
0.4
V
0.4
V
2.0
VCC + 0.3
2.0
VCC + 0.3
V
VIL
Input LOW Voltage
[3]
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage Current GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage Current GND < VO < VCC, Output Disabled
–1
+1
–1
+1
µA
ICC
VCC Operating
Supply Current
VCC = max,
f = fmax = 1/tRC
ISB1
Automatic CE
Power-down Current
—TTL Inputs
ISB2
Automatic CE
Power-down Current
—CMOS Inputs
Commercial
275
260
mA
Industrial
275
260
mA
CE2 <= VIL, max VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fmax
70
70
mA
CE2 <= 0.3V
Commercial/
Industrial
max VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
50
50
mA
Capacitance [4]
Parameter
Description
CIN
Input Capacitance
COUT
IO Capacitance
Test Conditions
TSOP II
TA = 25°C, f = 1 MHz, VCC = 3.3V
FBGA
Unit
6
8
pF
8
10
pF
AC Test Loads and Waveforms [5]
50Ω
VTH = 1.5V
OUTPUT
Z0 = 50Ω
(a)
OUTPUT
30 pF* * Capacitive Load consists of all components of the test environment.
3.3V
GND
R1 317 Ω
3.3V
5 pF*
ALL INPUT PULSES
90%
90%
R2
351Ω
INCLUDING
JIG AND
SCOPE
(b)
10%
10%
Rise time > 1V/ns
(c)
Fall time:
> 1V/ns
Notes
3. VIL (min) = –2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (3.0V). As soon as 1 ms (Tpower) after reaching the
minimum operating VDD, normal SRAM operation can begin including reduction in VDD to the data retention (VCCDR, 2.0V) voltage.
Document #: 38-05256 Rev. *G
Page 3 of 10
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CY7C1061AV33
AC Switching Characteristics (Over the Operating Range) [6]
Parameter
–10
Description
Min
–12
Max
Min
Max
Unit
Read Cycle
tpower
VCC(typical) to the first access [7]
1
tRC
Read Cycle Time
10
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE1 LOW/CE2 HIGH to Data Valid
tDOE
OE LOW to Data Valid
tLZOE
OE LOW to Low-Z
tHZOE
OE HIGH to High-Z
CE1 HIGH/CE2 LOW to High-Z
tPU
CE1 LOW/CE2 HIGH to Power Up [9]
tPD
CE1 HIGH/CE2 LOW to Power Down
tDBE
Byte Enable to Data Valid
tLZBE
Byte Enable to Low-Z
tHZBE
Byte Disable to High-Z
3
ns
6
ns
ns
6
5
[9]
12
3
0
ns
ns
1
5
tHZCE
ns
ns
6
0
ns
ns
10
12
ns
5
6
ns
1
1
5
ns
6
ns
[10, 11]
tWC
Write Cycle Time
tSCE
CE1 LOW/CE2 HIGH to Write End
tAW
Address Setup to Write End
tHA
Address Hold from Write End
tSA
Address Setup to Write Start
tPWE
WE Pulse Width
tSD
Data Setup to Write End
tHD
Data Hold from Write End
10
WE HIGH to Low-Z
[8]
tHZWE
WE LOW to High-Z
[8]
tBW
Byte Enable to End of Write
tLZWE
10
5
[8]
ns
12
3
1
CE1 LOW/CE2 HIGH to Low-Z
Write Cycle
3
[8]
ms
12
10
[8]
tLZCE
1
12
ns
7
8
ns
7
8
ns
0
0
ns
0
0
ns
7
8
ns
5.5
6
ns
0
0
ns
3
3
ns
5
7
6
8
ns
ns
Notes
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and specified transmission line loads. Test conditions for the Read cycle use output loading shown in (a) of the “AC Test Loads and Waveforms [5]” on
page 3, unless specified otherwise.
7. This part has a voltage regulator that steps down the voltage from 3V to 2V internally. tpower time must be provided initially before a Read/Write operation is started.
8. tHZOE, tHZCE, tHZWE, tHZBE and tLZOE, tLZCE, t\LZWE, tLZBE are specified with a load capacitance of 5 pF as in (b) of “AC Test Loads and Waveforms [5]” on page 3.
Transition is measured ±200 mV from steady-state voltage.
9. These parameters are guaranteed by design and are not tested.
10. The internal Write time of the memory is defined by the overlap of CE1 LOW (CE2 HIGH) and WE LOW. Chip enables must be active and WE and byte enables
must be LOW to initiate a Write, and the transition of any of these signals can terminate the Write. The input data setup and hold timing should be referenced to
the leading edge of the signal that terminates the Write.
11. The minimum Write cycle time for Write Cycle No. 2 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05256 Rev. *G
Page 4 of 10
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CY7C1061AV33
Data Retention Waveform
DATA RETENTION MODE
3.0V
VCC
3.0V
VDR > 2V
tR
tCDR
CE
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [12, 13]
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled) [13, 14]
ADDRESS
tRC
CE1
tPD
tHZCE
CE2
tACE
BHE/BLE
tDBE
tHZBE
tLZBE
OE
tHZOE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
tPU
50%
50%
ICC
ISB
Notes
12. Device is continuously selected. OE, CE, BHE or BHE, or both = VIL. CE2 = VIH.
13. WE is HIGH for Read cycle.
14. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
Document #: 38-05256 Rev. *G
Page 5 of 10
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CY7C1061AV33
Switching Waveforms (continued)
Write Cycle No. 1 (CE1 or CE2 Controlled) [15, 16]
tWC
ADDRESS
tSCE
CE1
CE2
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
tHD
tSD
DATA IO
NOTE 17
VALID DATA
tHZOE
Write Cycle No. 2 (WE Controlled, OE LOW) [15, 16]
tWC
ADDRESS
tSCE
CE1
CE2
tBW
BHE/BLE
tAW
tSA
tHA
tPWE
WE
tSD
DATA IO
NOTE 17
tHD
VALID DATA
tHZWE
tLZWE
Notes
15. Data IO is high impedance if OE, or BHE or BLE or both = VIH.
16. If CE1 goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
17. During this period, the IOs are in output state and input signals should not be applied.
Document #: 38-05256 Rev. *G
Page 6 of 10
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CY7C1061AV33
Switching Waveforms (continued)
Write Cycle No. 3 (BHE/BLE Controlled)
tWC
ADDRESS
CE1
CE2
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
NOTE 17
DATA IO
tHD
VALID DATA
Truth Table
CE1
CE2
OE
WE
BLE
BHE
H
X
X
X
X
X
High-Z
High-Z
Power Down
Standby (ISB)
X
L
X
X
X
X
High-Z
High-Z
Power Down
Standby (ISB)
L
H
L
H
L
L
Data Out
Data Out
Read All Bits
Active (ICC)
L
H
L
H
L
H
Data Out
High-Z
Read Lower Bits Only
Active (ICC)
L
H
L
H
H
L
High-Z
Data Out
Read Upper Bits Only
Active (ICC)
L
H
X
L
L
L
Data In
Data In
Write All Bits
Active (ICC)
L
H
X
L
L
H
Data In
High-Z
Write Lower Bits Only
Active (ICC)
L
H
X
L
H
L
High-Z
Data In
Write Upper Bits Only
Active (ICC)
L
H
H
H
X
X
High-Z
High-Z
Selected, Outputs Disabled
Active (ICC)
Document #: 38-05256 Rev. *G
IO0–IO7
IO8–IO15
Mode
Power
Page 7 of 10
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CY7C1061AV33
Ordering Information
Speed
(ns)
10
12
Ordering Code
CY7C1061AV33-10ZXC
CY7C1061AV33-10BAC
CY7C1061AV33-10ZI
CY7C1061AV33-10ZXI
CY7C1061AV33-10BAXI
CY7C1061AV33-12ZC
CY7C1061AV33-12ZXC
CY7C1061AV33-12BAC
CY7C1061AV33-12ZXI
Package
Diagram
51-85160
51-85162
51-85160
51-85162
51-85160
51-85162
51-85160
Package Type
54-pin TSOP II (Pb-free)
60-ball FBGA
54-pin TSOP II
54-pin TSOP II (Pb-free)
60-ball FBGA (Pb-free)
54-pin TSOP II
54-pin TSOP II (Pb-free)
60-ball FBGA
54-pin TSOP II (Pb-free)
Operating Range
Commercial
Industrial
Commercial
Industrial
Contact local Cypress representative for availability of the these parts.
Package Diagrams
Figure 1. 54-pin TSOP II, 51-85160
51-85160-**
Document #: 38-05256 Rev. *G
Page 8 of 10
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CY7C1061AV33
Package Diagrams (continued)
Figure 2. 60-ball FBGA (8 x 20 x 1.2 mm), 51-85162
TOP VIEW
A1 CORNER
1
2
3
4
5
BOTTOM VIEW
6
A1 CORNER
6
5
4
3
2
1
DUMMY BALL (0.3) X12
Ø0.05 M C
Ø0.25 M C A B
Ø0.30±0.05(48X)
A
B
A
G
H
C
D
E
0.75
F
18.00
20.00±0.10
E
2.625
B
D
5.25
20.00±0.10
C
F
G
H
0.75
DIMENSIONS IN MM
1.00
PART #
A
B
8.00±0.10
1.875
A
BA60A
STANDARD PKG.
BK60A
LEAD FREE PKG.
0.75
0.75
1.00
PKG WEIGHT: 0.30 gms
6.00
0.15 C
0.21±0.05
0.25 C
0.53±0.05
3.75
B
8.00±0.10
0.15(4X)
C
1.20 MAX
0.36
SEATING PLANE
51-85162-*D
All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05256 Rev. *G
Page 9 of 10
© Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1061AV33
Document History Page
Document Title: CY7C1061AV33 16-Mbit (1M x 16) Static RAM
Document Number: 38-05256
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
113725
03/28/02
NSL
New Data Sheet
*A
117058
07/31/02
DFP
Removed 15-ns bin
*B
117989
08/30/02
DFP
Added 8-ns bin
Changed Icc for 8, 10, 12 bins
tpower changed from 1 µs to 1 ms.
Load Cap Comment changed (for Tx line load)
tSD changed to 5.5 ns for the 10-ns bin
Changed some 8-ns bin numbers (tHZ, tDOE, tDBE)
Removed hz<lz comments from data sheet
*C
120383
11/06/02
DFP
Final data sheet
Added note 3 to “AC Test Loads and Waveforms” and note 7 to tpu and tpd
Updated Input/Output Caps (for 48BGA only) to 8 pF/10 pF and for the
54-pin TSOP to 6/8 pF
*D
124439
2/25/03
MEG
Changed ISB1 from 100 mA to 70 mA
Shaded fBGA production ordering information
*E
492137
See ECN
NXR
Corrected Block Diagram on page #1
Removed 8 ns speed bin
Changed 48-Ball FBGA to 60-Ball FBGA in Pin Configuration
Included Note #1 and 2 on page #2
Changed the description of IIX from Input Load Current to Input Leakage
Current in DC Electrical Characteristics table
Updated the Ordering Information Table
*F
508117
See ECN
NXR
Updated FBGA Pin Configuration
Updated Ordering Information table
*G
877322
See ECN
VKN
Updated Ordering Information table
Document #: 38-05256 Rev. *G
Page 10 of 10
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