DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor Product specification Supersedes data of 1995 Apr 10 1997 Nov 17 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base station transmitters in the 820 to 960 MHz range. handbook, halfpage 2 4 c 6 PINNING - SOT171A PIN SYMBOL 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter b DESCRIPTION 1 3 e 5 Top view MAM141 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 20 ≥10 ≥ 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Nov 17 2 Philips Semiconductors Product specification UHF power transistor BLV920 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 3 A IC(AV) average collector current − 3 A Ptot total power dissipation − 50 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C up to Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE Ptot = 49 W; Tmb = 25 °C 3.5 K/W 0.4 K/W MLC669 10 MLC670 80 handbook, halfpage UNIT handbook, halfpage Ptot (W) IC (A) 60 (1) (2) (2) 1 40 (1) 20 10 1 1 10 V CE (V) 0 10 2 0 (1) Tmb = 25 °C. (2) Th = 70 °C. 40 60 80 100 120 140 Th ( oC) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1997 Nov 17 20 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power transistor BLV920 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 15 mA 70 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 30 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.6 mA 3 − − V ICES collector leakage current VBE = 0; VCE = 28 V − − 1.5 mA hFE DC current gain VCE = 10 V; IC = 1 A; note 1 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz − 17 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 11 − pF Note 1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01. MLC671 MLC672 60 100 handbook, halfpage handbook, halfpage h FE (1) Cc (pF) 80 40 60 (2) 40 20 20 0 0 1 2 3 4 5 0 6 0 10 I C (A) Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01. (1) VCE = 26 V. (2) VCE = 10 V. Fig.4 30 40 50 VCB (V) IE = ie = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. 1997 Nov 17 20 Fig.5 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLV920 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.4 K/W. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 50 20 ≥10 ≥55 Ruggedness in class-AB operation The BLV920 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 50 mA; Th = 25 °C; Rth mb-h = 0.4 K/W. MLC673 16 MLC674 80 handbook, halfpage 30 handbook, halfpage η (%) Gp (dB) Gp 12 PL (W) 60 20 η 40 8 10 20 4 0 0 0 10 20 0 30 0 P L (W) VCE = 26 V. ICQ = 50 mA. VCE = 26 V. ICQ = 50 mA. f = 960 MHz. f = 960 MHz. Fig.6 Power gain and efficiency as functions of load power; typical values. 1997 Nov 17 Fig.7 5 1 2 3 P i (W) 4 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth R1 VB C6 C18 C14 C20 C15 C17 L13 C8 input 50 Ω BLV920 C1 R2 VCC L14 C7 L12 C16 L11 ,,,,,,,,,,, ,,,,,,,,,,, L1 L2 C2 L3 C3 C5 DUT L4 C10 L5 L6 L7 L8 C4 C9 L9 L10 C11 C13 C19 output 50 Ω C12 MGC325 Fig.8 Class-AB test circuit at f = 960 MHz. List of components (see Figs 8 and 9) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C13 multilayer ceramic chip capacitor; note 1 43 pF C2, C3, C11, C12 film dielectric trimmer 1.4 pF to 5.5 pF C4, C5 multilayer ceramic chip capacitor; note 2 10 pF C6, C17 multilayer ceramic chip capacitor; note 1 150 pF C7, C16 ceramic capacitor 22 nF 2222 640 08223 C8, C19 solid aluminium capacitor 10 µF, 63 V 2222 030 38109 C14 multilayer ceramic chip capacitor; note 1 20 pF C9, C10 multilayer ceramic chip capacitor; note 2 11 pF C20 multilayer ceramic chip capacitor; note 1 1 nF C15, C18 multilayer ceramic chip capacitor; note 1 62 pF L1 stripline; note 3 50 Ω length 16.8 mm width 2.4 mm L2 stripline; note 3 50 Ω length 14.8 mm width 2.4 mm L3 stripline; note 3 50 Ω length 13.7 mm width 2.4 mm 1997 Nov 17 6 2222 809 09001 Philips Semiconductors Product specification UHF power transistor COMPONENT BLV920 DESCRIPTION VALUE DIMENSIONS L4 stripline; note 3 43 Ω length 3.5 mm width 3 mm L5 stripline; note 3 43 Ω length 6.4 mm width 3 mm L6 stripline; note 3 43 Ω length 5.8 mm width 3 mm L7 stripline; note 3 43 Ω length 2.4 mm width 3 mm L8 stripline; note 3 50 Ω length 3 mm width 2.4 mm L9 stripline; note 3 50 Ω length 15.5 mm width 2.4 mm L10 stripline; note 3 50 Ω length 20 mm width 2.4 mm L11 4 turns enamelled 0.8 mm copper wire 45 nH int. diameter 4mm length 5 mm leads 2 × 5 mm L12 3 turns enamelled 0.8 mm copper wire 30 nH int. diameter 3mm length 5 mm leads 2 × 5 mm L13, L14 grade 3B Ferroxcube wideband RF choke R1, R2 metal film resistor 4312 020 36642 10 Ω, 0.4 W Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32". 1997 Nov 17 CATALOGUE No. 7 2322 151 71009 Philips Semiconductors Product specification UHF power transistor BLV920 122 handbook, full pagewidth copper straps copper straps rivets rivets 70 rivets rivets copper straps copper straps C19 C8 C20 L13 L14 C17 C16 C6 C7 R2 R1 C18 C14 C15 L12 L11 C10 C5 L1 L2 L3 C4 C1 L4 L5 L6 L7 L8 L9 L10 C13 C9 C2 C11 C3 C12 MGC326 Dimensions in mm. The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component side and the ground plane. Fig.9 Component layout for 960 MHz class-AB test circuit. 1997 Nov 17 8 Philips Semiconductors Product specification UHF power transistor BLV920 MLC676 MLC675 5 10 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) RL 4 8 xi 6 3 4 2 XL ri 1 2 0 820 860 900 940 0 820 980 860 900 940 980 f (MHz) f (MHz) VCE = 26 V; ICQ = 50 mA; PL = 20 W; Th = 25 °C; Rth mb-h = 0.4 K/W. VCE = 26 V; ICQ = 50 mA; PL = 20 W; Th = 25 °C; Rth mb-h = 0.4 K/W. Fig.10 Input impedance as a function of frequency (series components); typical values. Fig.11 Load impedance as a function of frequency (series components); typical values. MLC677 12 handbook, halfpage Gp (dB) 8 handbook, halfpage 4 Zi ZL 0 820 860 900 940 MBA451 980 f (MHz) VCE = 26 V; ICQ = 50 mA; PL = 20 W; Th = 25 °C; Rth mb-h = 0.4 K/W. Fig.12 Power gain as a function of frequency; typical values. 1997 Nov 17 Fig.13 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLV920 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A 1997 Nov 17 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF power transistor BLV920 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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