IRF840S
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Ease of Paralleling
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
500V
RDS(ON)
0.85Ω
ID
G
8A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
GD
S
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
TO-263(S)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
8
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5.1
A
32
A
125
W
320
mJ
8
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
1.0
℃/W
40
℃/W
1
200904141
IRF840S
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
500
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.8A
-
-
0.85
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.8A
-
4.2
-
S
IDSS
Drain-Source Leakage Current
VDS=500V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=400V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=8A
-
45
72
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
25
-
nC
3
td(on)
Turn-on Delay Time
VDD=250V
-
12
-
ns
tr
Rise Time
ID=8A
-
31
-
ns
td(off)
Turn-off Delay Time
RG=9.1Ω,VGS=10V
-
48
-
ns
tf
Fall Time
RD=31Ω
-
33
-
ns
Ciss
Input Capacitance
VGS=0V
-
1250 2000
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
Max. Units
Tj=25℃, IS=8A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
515
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
IRF840S
16
8
10V
7.0V
ID , Drain Current (A)
10V
7 .0V
6 .0V
T C =150 o C
ID , Drain Current (A)
o
T C =25 C
12
6.0V
8
4
6
5 .0 V
4
V G = 4. 5 V
2
5.0V
V G =4.5V
0
0
0
4
8
12
16
20
0
24
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =4.8A
V G =10V
1.1
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
o
Fig 3. Normalized BVDSS v.s. Junction
50
100
150
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
8
1.2
Normalized VGS(th) (V)
10
T j = 150 o C
IS (A)
0
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
T j = 25 o C
6
4
2
1
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
IRF840S
f=1.0MHz
2400
12
I D =8A
2000
V DS =100V
V DS =250V
V DS =400V
8
1600
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
1200
4
800
2
400
0
C oss
C rss
0
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
ID (A)
100us
1ms
1
10ms
100ms
DC
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4