N-Channel MOSFET 600V, 7.0A, 1.15Ω Ω General Description Features These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V N-channel MOSFET 600V Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply PFC High Current, High Speed Switching D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Pulsed Drain Current 600 V 660 V VGSS ±30 V ID o TC=100 C IDM o TC=25 C Power Dissipation o Derate above 25 C (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range Unit VDSS TC=25 C (1) MDF7N60B VDSS @ Tjmax o Continuous Drain Current MDP7N60B PD 7.0 7.0* A 4.4 4.4* A 28 28* A 131 42 1.05 0.33 W o W/ C EAR 13.1 mJ dv/dt 4.5 V/ns EAS 220 mJ TJ, Tstg -55~150 o C * Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Oct. 2010 Version 1.3 (1) (1) 1 Symbol MDP7N60B MDF7N60B RθJA 62.5 62.5 RθJC 0.95 3.01 MDP7N60B / MDF7N60B MDP7N60B / MDF7N60B Unit o C/W MagnaChip Semiconductor Ltd. MDP7N60B / MDF7N60B Ordering Information Part Number Temp. Range MDP7N60BTH MDF7N60BTH Package Packing RoHS Status o TO-220 Tube Halogen Free o TO-220F Tube Halogen Free -55~150 C -55~150 C Electrical Characteristics (Ta = 25oC Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0 IDSS VDS = 600V, VGS = 0V - - 1 µA VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance IGSS RDS(ON) VGS = 10V, ID = 3.5A gfs VDS = 30V, ID = 3.5A Forward Transconductance V - 100 nA 1.0 1.15 Ω - 7.5 - S - 20.1 - - 4.5 - - 7.9 - - 800 - - 5 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 7.0A, VGS = 10V (3) nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 90 - Turn-On Delay Time td(on) - 17 - - 27 - - 64 - tf - 33 - IS - 7 - A 1.4 V Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 300V, ID = 7.0A, (3) RG = 25Ω pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD IS = 7.0A, VGS = 0V trr IF = 7.0A, dl/dt = 100A/µs - 345 - ns - 3.2 - µC (3) Qrr Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=8.2mH, IAS=7.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Oct. 2010 Version 1.3 2 MagnaChip Semiconductor Ltd. N-channel MOSFET 600V Characteristics 2.2 Vgs=15.0V =10.0V =8.0V =7.0V =6.5V =6.0V =5.5V =5.0V 8 1.8 RDS(ON) [Ω ] 10 2.0 6 VGS=10.0V 1.6 VGS=20V 1.4 4 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 2 1.2 0 1.0 0 5 10 15 20 25 0 3 VDS,Drain-Source Voltage [V] ※ Notes : 1. VGS = 10 V 2. ID = 3.5A BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 12 15 1.2 3.0 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 200 0 o IDR Reverse Drain Current [A] 10 -55℃ 1 25℃ 0.1 4 6 200 ※ Notes : 1. VGS = 0 V 2.250µs Pulse test 25℃ 150℃ 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Oct. 2010 Version 1.3 150 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=30V 2 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 150℃ 50 o TJ, Junction Temperature [ C] 10 9 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 6 ID,Drain Current [A] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. N-channel MOSFET 600V ID,Drain Current [A] 12 ID(A) MDP7N60B / MDF7N60B 14 MDP7N60B / MDF7N60B 1500 10 1400 ※ Note : ID = 7.0A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C oss 1300 8 1200 300V 1100 Capacitance [pF] 480V 6 4 C iss 1000 900 800 700 600 500 2 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz C rss 400 N-channel MOSFET 600V VGS, Gate-Source Voltage [V] 120V 300 200 0 100 0 0 2 4 6 8 10 12 14 16 18 20 1 22 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 2 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 10 Operation in This Area is Limited by R DS(on) 100 µs 1 10 1 ms 10 ms DC 10 2 10 µs ID, Drain Current [A] 10 100 ms 0 -1 100 µs 1 ms 10 0 DC -1 Single Pulse TJ=Max rated TC=25℃ -2 10 -1 10 10 ms 100 ms 1s 10 10 10 µs 1 Single Pulse TJ=Max rated TC=25℃ 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 0 10 1 10 -2 2 10 -1 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig.10 Maximum Safe Operating Area MDF7N60B(TO-220F) Fig.9 Maximum Safe Operating Area MDP7N60B(TO-220) 0 10 D=0.5 D=0.5 0.2 Zθ JC(t), Thermal Response Zθ JC(t), Thermal Response 0 10 0.1 -1 10 0.05 0.02 0.1 0.05 -1 0.02 10 0.01 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=0.95℃/W 0.01 single pulse ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.01℃/W single pulse -2 -2 10 0.2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.12 Transient Thermal Response Curve MDF7N60B(TO-220F) Fig.11 Transient Thermal Response Curve MDP7N60B(TO-220) Oct. 2010 Version 1.3 -5 10 10 t1, Rectangular Pulse Duration [sec] 4 MagnaChip Semiconductor Ltd. MDP7N60B / MDF7N60B 15000 14000 single Pulse RthJC = 0.95℃/W TC = 25℃ 12000 single Pulse RthJC = 3.01℃/W TC = 25℃ 12000 9000 Power (W) Power (W) 10000 6000 8000 6000 4000 2000 0 1E-5 1E-4 1E-3 0.01 0.1 1 0 1E-5 10 Pulse Width (s) 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.14 Single Pulse Maximum Power Dissipation MDF7N60B(TO-220F) Fig.13 Single Pulse Maximum Power Dissipation MDP7N60B(TO-220) 8 7 ID, Drain Current [A] 6 5 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [℃] Fig.15 Maximum Drain Current vs. Case Temperature Oct. 2010 Version 1.3 5 MagnaChip Semiconductor Ltd. N-channel MOSFET 600V 3000 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified MDP7N60B / MDF7N60B Physical Dimensions N-channel MOSFET 600V Oct. 2010 Version 1.3 6 MagnaChip Semiconductor Ltd. 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified MDP7N60B / MDF7N60B Physical Dimensions N-channel MOSFET 600V S y mbol A b b1 C D E e F G L L1 Q Q1 ￠R Oct. 2010 Version 1.3 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 7 MagnaChip Semiconductor Ltd. MDP7N60B / MDF7N60B N-channel MOSFET 600V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Oct. 2010 Version 1.3 8 MagnaChip Semiconductor Ltd.