ON MMBZ15VALT1G 24 and 40 watt peak power zener transient voltage suppressor Datasheet

MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
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SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
CATHODE 1
Features
CATHODE 2
 SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
 Working Peak Reverse Voltage Range − 3 V to 26 V
 Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
 Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),







per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOT−23
CASE 318
STYLE 12
3 ANODE
MARKING DIAGRAM
xxxMG
G
1
xxx
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
260C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 13
1
Publication Order Number:
MMBZ5V6ALT1/D
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TL  25C
MMBZ5V6ALT1G thru MMBZ9V1ALT1G
MMBZ12VALT1G thru MMBZ33VALT1G
Symbol
Value
Unit
Ppk
24
40
W
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25C
Derate above 25C
PD
Thermal Resistance Junction−to−Ambient
RqJA
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25C
Derate above 25C
PD
Thermal Resistance Junction−to−Ambient
RqJA
417
C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
C
TL
260
C
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 6 and derate above TA = 25C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Package
Shipping†
MMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ5V6ALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ6VxALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ6VxALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ6VxALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ9V1ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ9V1ALT13G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZxxVALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
I
IF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
VC VBR VRWM
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
V
IR VF
IT
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
24 WATTS
Max Zener
Impedance (Note 5)
VC @ IPP
(Note 6)
@ IT
ZZT
@ IZT
ZZK @ IZK
VC
IPP
QVBR
mA
W
W
mA
V
A
mV/5C
Breakdown Voltage
IR @
VRWM
Device*
Device
Marking
VRWM
Volts
mA
Min
Nom
Max
MMBZ5V6ALT1G/T3G
5A6
3.0
5.0
5.32
5.6
5.88
20
11
1600
0.25
8.0
3.0
1.26
MMBZ6V2ALT1G
6A2
3.0
0.5
5.89
6.2
6.51
1.0
−
−
−
8.7
2.76
2.80
MMBZ6V8ALT1G
6A8
4.5
0.5
6.46
6.8
7.14
1.0
−
−
−
9.6
2.5
3.4
MMBZ9V1ALT1G
9A1
6.0
0.3
8.65
9.1
9.56
1.0
−
−
−
14
1.7
7.5
VBR (Note 4) (V)
(VF = 0.9 V Max @ IF = 10 mA)
40 WATTS
Device
Marking
VRWM
IR @
VRWM
Volts
nA
MMBZ12VALT1G
12A
8.5
MMBZ15VALT1G
15A
12
MMBZ18VALT1G
18A
MMBZ20VALT1G
20A
MMBZ27VALT1G/T3G
MMBZ33VALT1G
Device*
VC @ IPP (Note 6)
Breakdown Voltage
VBR (Note 4) (V)
@ IT
VC
IPP
QVBR
Min
Nom
Max
mA
V
A
mV/5C
200
11.40
12
12.60
1.0
17
2.35
7.5
50
14.25
15
15.75
1.0
21
1.9
12.3
14.5
50
17.10
18
18.90
1.0
25
1.6
15.3
17
50
19.00
20
21.00
1.0
28
1.4
17.2
27A
22
50
25.65
27
28.35
1.0
40
1.0
24.3
33A
26
50
31.35
33
34.65
1.0
46
0.87
30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
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3
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
1000
15
100
12
10
IR (nA)
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
18
9
1
6
0.1
3
0
−40
0
+ 50
+ 100
TEMPERATURE (C)
0.01
−40
+ 150
Figure 1. Typical Breakdown Voltage
versus Temperature
+ 85
+ 25
TEMPERATURE (C)
+ 125
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
60
320
C, CAPACITANCE (pF)
50
240
200
5.6 V
160
120
15 V
80
0
40
27 V
30
20
10
40
0
1
2
0
3
33 V
0
1
BIAS (V)
2
3
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
PD, POWER DISSIPATION (mW)
C, CAPACITANCE (pF)
280
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0
25
50
75
100
125
TEMPERATURE (C)
150
175
Figure 5. Steady State Power Derating Curve
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4
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
tr  10 ms
100
VALUE (%)
PEAK VALUE − IPP
IPP
HALF VALUE −
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
Figure 6. Pulse Waveform
RECTANGULAR
WAVEFORM, TA = 25C
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
Figure 7. Pulse Derating Curve
BIDIRECTIONAL
1
200
100
100
10
50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (C)
UNIDIRECTIONAL
0.1
1
10
100
RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
1000
0.1
1
10
100
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 9. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
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5
1000
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
D
FUNCTIONAL
DECODER
GND
MMBZ5V6ALT1G
THRU
MMBZ33VALT1G
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
I/O
CPU
CLOCK
MMBZ5V6ALT1G
THRU
MMBZ33VALT1G
CONTROL BUS
GND
MMBZ5V6ALT1G
THRU
MMBZ33VALT1G
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6
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MMBZ5V6ALT1/D