JCH3201 Ordering number : ENA0711 JCH3201 NPN Epitaxial Planar Silicon Transistors For Automotive Audios Features • • • • Adoption of MBIT processes. High breakdown voltage and large current capacity. High-speed switching. High reliability. / Reliability test 2000 hours guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 100 V Collector-to-Emitter Voltage VCBO VCEO 100 V Emitter-to-Base Voltage VEBO 6 V IC 1 A Collector Current (Pulse) ICP 2 A Collector Dissipation PC 0.9 W 150 °C --55 to +150 °C Collector Current Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (600mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=100V, IE=0A 100 nA Emitter Cutoff Current IEBO hFE VEB=4V, IC=0A 100 nA DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : 5B fT Cob VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz 140 400 120 MHz 8.5 pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22008EA TI IM TC-00001205 No. A0711-1/4 JCH3201 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time min typ IC=400mA, IB=40mA IC=400mA, IB=40mA V(BR)CBO V(BR)CEO IC=10μA, IE=0A IC=1mA, RBE=∞ V(BR)EBO ton tstg IE=10μA, IC=0A See specified Test Circuit. tf Fall Time Ratings Conditions Unit max 0.1 0.4 V 0.85 1.2 V 100 V 100 V 6 V 80 ns See specified Test Circuit. 850 ns See specified Test Circuit. 50 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7015A-003 0.6 2.9 0.15 OUTPUT IB2 3 INPUT RB 0.2 VR RL 0.05 1.6 2.8 IB1 PW=20μs D.C.≤1% 1 + 470μF + 100μF 2 0.95 1 : Base 2 : Emitter 3 : Collector 0.4 --5V 50V IC=10IB1= --10IB2=400mA 0.9 0.2 0.6 50Ω SANYO : CPH3 IC -- VCE 0.8 0.7 10mA VCE=5V 0.4 1mA 0.3 0.4 --40°C 0.5 0.6 25°C 5mA 3mA 2mA 0.6 0.8 Ta=8 5°C Collector Current, IC -- A 0.9 IC -- VBE 1.0 25mA 20mA 15mA Collector Current, IC -- A 1.0 0.2 0.2 0.1 IB=0mA 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 0.2 0.1 0.3 0.4 0.5 0.7 0.6 VCE=10V Gain-Bandwidth Product, fT -- MHz 3 25°C 2 --40°C 100 7 5 3 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT13168 1.0 IT13167 f T -- IC 3 Ta=85°C 0.9 0.8 Base-to-Emitter Voltage, VBE -- V VCE=5V 5 DC Current Gain, hFE 0 IT07233 hFE -- IC 7 2 0.01 0 5.0 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT07239 No. A0711-2/4 JCH3201 Cob -- VCB 5 IC / IB=10 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 10 7 5 3 2 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 100 IT07241 0.1 °C 85 7 Ta= 5 3 C 25° 2 3 5 7 Collector Current, IC -- A 2 0.1 3 5 Collector Current, IC -- A ICP=2A IC=1A ssi pa 10 0m op s era tio 10 ms tio nL n ite d im 0.1 7 5 S /B 3 2 Li m 3 2 0.01 7 5 3 2 ite d Ta=85°C Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V pa tio DC nL 10 era im n d s S /B Li m 3 2 0.01 7 5 7 1.0 IT13169 0m tio ite 0.1 7 5 ms 10 op ite d Ta=25°C Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- W DC s ssi 2 IT07246 PC -- Ta When mounted on ceramic substrate (600mm2✕0.8mm) 0.9 s 0μ Di 3 2 0μ s s 5 <10μs Di 0.001 0.1 <10μs 50 1m 3 1m IC=1A 1.0 10 1.0 7 5 1.0 IT13170 ASO 5 3 2 7 2 0.1 ICP=2A 1.0 7 5 3 2 2 7 μs s 0μ 50 85°C 3 2 0.01 5 100 7 5 3 ASO 3 2 Ta= --40°C 25°C 2 5 2 1.0 0°C --4 Collector Current, IC -- A IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.01 0.01 7 VBE(sat) -- IC 3 Collector Current, IC -- A VCE(sat) -- IC 5 f=1MHz 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 IT13378 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07247 No. A0711-3/4 JCH3201 JCH3201 Reliability Assurance Test Test Conditions Test Time LTPD Environmental Test Temperature Cycle --55°C to 150°C (30 min each) 500 cycles 10% Thermal Shock 100°C to 0°C (5 min each) 250 cycles 10% Pressure Cooker Test (Autoclave) Ta=121°C, 100%RH, 203kPa 200 hrs 10% Steady State Operating Life Ta=25°C, Tj=150°C 2000 hrs 10% Intermittent Operating Life Ta=25°C, ΔTj=90°C 20000 cycles 10% High Temperature Reverse Bias Ta=150°C, VCES=100V 2000 hrs 10% Temperature Humidity Storage Ta=85°C, 85%RH 2000 hrs 10% High Temperature Storage Ta=150°C 2000 hrs 10% Low Temperature Storage Ta=--55°C 2000 hrs 10% Temperature Humidity Reverse Bias Ta=85°C, 85%RH, VCES=100V 2000 hrs 10% C=200pF, R=0Ω, 3 times 200V Endurance Test Electrostatic Discharges Machine Model SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. A0711-4/4