Micronas HAL401 Linear hall-effect sensor ic Datasheet

Hardware
Documentation
Data Sheet
®
HAL 401
Linear Hall-Effect Sensor IC
Edition Dec. 8, 2008
DSH000018_002EN
HAL401
DATA SHEET
Copyright, Warranty, and Limitation of Liability
Micronas Trademarks
The information and data contained in this document are
believed to be accurate and reliable. The software and
proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas.
– HAL
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the suitability of its products for any particular purpose due to
these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Patents
Choppered Offset Compensation protected by Micronas
patents no. US5260614A, US5406202A, EP052523B1,
and EP0548391B1.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications, and
actual performance may vary over time.
All operating parameters must be validated for each customer application by customers technical experts. Any
new issue of this document invalidates previous issues.
Micronas reserves the right to review this document and
to make changes to the documents content at any time
without obligation to notify any person or entity of such
revision or changes. For further advice please contact
us directly.
Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties, Micronas products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the product could create
a situation where personal injury or death could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without
the express written consent of Micronas.
2
Micronas
HAL401
DATA SHEET
Contents
Page
Section
Title
4
4
4
4
4
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
Introduction
Features
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability and Welding
6
2.
Functional Description
7
7
8
8
8
8
9
10
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Area
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
18
18
18
18
4.
4.1.
4.2.
4.3.
Application Notes
Ambient Temperature
EMC and ESD
Application Circuit
20
5.
Data Sheet History
Micronas
3
HAL401
Linear Hall Effect Sensor IC
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 401 is a Linear Hall Effect Sensors produced in
CMOS technology. The sensor includes a temperaturecompensated Hall plate with choppered offset compensation, two linear output stages, and protection devices (see Fig. 2–1).
DATA SHEET
1.2. Marking Code
Type
Temperature Range
A
HAL401
401A
K
401K
1.3. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
The output voltage is proportional to the magnetic flux
density through the hall plate. The choppered offset
compensation leads to stable magnetic characteristics
over supply voltage and temperature.
A: TJ = –40 °C to +170 °C
The HAL 401 can be used for magnetic field measurements, current measurements, and detection of any mechanical movement. Very accurate angle measurements or distance measurements can also be done. The
sensor is very robust and can be used in electrical and
mechanical hostile environments.
Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction
temperature. Please refer to section 4.1. on page
18 for details.
The sensor is designed for industrial and automotive applications and operates in the ambient temperature
range from –40 °C up to 150 °C and is available in the
SMD-package SOT89B-1.
1.4. Hall Sensor Package Codes
1.1. Features:
K: TJ = –40 °C to +140 °C
HALXXXPA-T
Temperature Range: A or K
Package: SF for SOT89B-1
Type: 401
– switching offset compensation at 147 kHz
Example: HAL401SF-K
– low magnetic offset
→ Type: 401
→ Package: SOT89B-1
→ Temperature Range: TJ = –40 °C to +140 °C
– extremely sensitive
– operates from 4.8 to 12 V supply voltage
– wide temperature range TA = –40 °C to +150 °C
– overvoltage protection
– reverse voltage protection of VDD-pin
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Hall Sensors: Ordering
Codes, Packaging, Handling”.
– differential output
– accurate absolute measurements of DC and low frequency magnetic fields
– on-chip temperature compensation
4
Micronas
HAL401
DATA SHEET
1.5. Solderability and Welding
Soldering
During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not
be exceeded.
Welding
Device terminals should be compatible with laser and resistance welding. Please note that the success of the
welding process is subject to different welding parameters which will vary according to the welding technique
used. A very close control of the welding parameters is
absolutely necessary in order to reach satisfying results.
Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component.
1 VDD
2
3
4
OUT1
OUT2
GND
Fig. 1–1: Pin configuration
Micronas
5
HAL401
DATA SHEET
External filtering or integrating measurement can be
done to eliminate the AC component of the signal. Resultingly, the influence of mechanical stress and temperature cycling is suppressed. No adjustment of magnetic
offset is needed.
2. Functional Description
GND
4
Chopper
Oscillator
Temp.
Dependent
Bias
The sensitivity is stabilized over a wide range of temperature and supply voltage due to internal voltage regulation and circuits for temperature compensation.
Offset
Compensation;
Hallplate
Switching
Matrix
Offset Compensation (see Fig. 2–2)
The Hall Offset Voltage is the residual voltage measured
in absence of a magnetic field (zero-field residual voltage). This voltage is caused by mechanical stress and
can be modeled by a displacement of the connections
for voltage measurement and/or current supply.
Protection
Device
VDD
OUT1
OUT2
1
2
3
Compensation of this kind of offset is done by cyclic
commutating the connections for current flow and voltage measurement.
Fig. 2–1: Block diagram of the HAL 401 (top view)
– First cycle:
The hall supply current flows between points 4 and 2.
In the absence of a magnetic field, V13 is the Hall Offset Voltage (+VOffs). In case of a magnetic field, V13 is
the sum of the Hall voltage (VH) and VOffs.
V13 = VH + VOffs
The Linear Hall Sensor measures constant and low frequency magnetic flux densities accurately. The differential output voltage VOUTDIF (difference of the voltages on
pin 2 and pin 3) is proportional to the magnetic flux density passing vertically through the sensitive area of the
chip. The common mode voltage VCM (average of the
voltages on pin 2 and pin 3) of the differential output amplifier is a constant 2.2 V.
– Second cycle:
The hall supply current flows between points 1 and 3.
In the absence of a magnetic field, V24 is the Hall Offset Voltage with negative polarity (–VOffs). In case of
a magnetic field, V24 is the difference of the Hall voltage (VH) and VOffs.
V24 = VH – VOffs
The differential output voltage consists of two components due to the switching offset compensation technique. The average of the differential output voltage represents the magnetic flux density. This component is
overlaid by a differential AC signal at a typical frequency
of 147 kHz. The AC signal represents the internal offset
voltages of amplifiers and hall plates that are influenced
by mechanical stress and temperature cycling.
In the first cycle, the output shows the sum of the Hall
voltage and the offset; in the second, the difference of
both. The difference of the mean values of VOUT1 and
VOUT2 (VOUTDIF) is equivalent to VHall.
for Bu0 mT
V
1
1
4
VOffs
IC
VOUT1
IC
Note: The numbers do not
represent pin numbers.
VOffs
2
VCM
VOUTDIF/2
VOUTDIF
VOUTDIF/2
VOUTAC
2
3
4
3
V
a) Offset Voltage
1/fCH = 6.7 μs
VOUT2
V
b) Switched Current Supply
c) Output Voltage
t
Fig. 2–2: Hall Offset Compensation
6
Micronas
DATA SHEET
HAL401
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Weight approximately 0.034 g
Micronas
7
HAL401
DATA SHEET
3.2. Dimensions of Sensitive Area
0.37 mm x 0.17 mm
3.3. Position of Sensitive Area
SOT89B-1
y
0.95 mm nominal
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute
maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–12
12
V
VO
Output Voltage
2, 3
–0.3
12
V
IO
Continuous Output Current
2, 3
–5
5
mA
TJ
Junction Temperature Range
–40
170
°C
TA
Ambient Temperature
at VDD = 5 V
at VDD = 12 V
–
–
150
125
°C
°C
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
8
Micronas
HAL401
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
Remarks
IO
Continuous Output Current
2, 3
–2.25
2.25
mA
TJ = 25 °C
IO
Continuous Output Current
2, 3
–1
1
mA
TJ = 170 °C
CL
Load Capacitance
2, 3
–
1
nF
VDD
Supply Voltage
1
4.8
12
V
B
Magnetic Field Range
–50
50
mT
see Fig. 3–2
ÈÈÈÈÈÈÈÈÈÈÈÈ
ÈÈÈÈÈÈÈÈÈÈÈÈ
ÈÈÈÈÈÈÈÈÈÈÈÈ
ÈÈÈÈÈÈÈÈÈÈÈÈ
ÈÈÈÈÈÈÈÈÈÈÈÈ
ÈÈÈÈÈÈÈÈÈÈÈÈ
ÈÈÈÈÈÈÈÈÈÈÈÈ
VDD
power dissipation limit
12 V
11.5 V
8.0 V
6.8 V
4.8 V
4.5 V
–40 °C
min. VDD
for specified
sensitivity
25 °C
125 °C 150 °C TA
Fig. 3–2: Recommended Operating Supply Voltage
Micronas
9
HAL401
DATA SHEET
3.6. Characteristics at TJ = –40 °C to +170 °C , VDD = 4.8 V to 12 V, GND = 0 V
at Recommended Operation Conditions (Fig. 3–2 for TA and VDD) as not otherwise specified in the column “Conditions”.
Typical characteristics for TJ = 25 °C, VDD = 6.8 V and –50 mT < B < 50 mT
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
11
14.5
17.1
mA
TJ = 25 °C, IOUT1,2 = 0 mA
IDD
Supply Current over
Temperature Range
1
9
14.5
18.5
mA
IOUT1,2 = 0 mA
VCM
Common Mode Output Voltage
VCM = (VOUT1 + VOUT2 ) / 2
2, 3
2.1
2.2
2.3
V
IOUT1,2 = 0 mA,
CMRR
Common Mode Rejection Ratio
2, 3
–2.5
0
2.5
mV/V
IOUT1,2 = 0 mA,
CMRR is limited by the influence of power dissipation.
SB
Differential Magnetic Sensitivity
2–3
42
48.5
55
mV/mT
–50 mT < B < 50 mT
TJ = 25 °C
SB
Differential Magnetic Sensitivity
over Temperature Range
2–3
37.5
46.5
55
mV/mT
–50 mT < B < 50 mT
Boffset
Magnetic Offset
over Temperature
2–3
–1.5
–0.2
1.5
mT
B = 0 mT, IOUT1,2 = 0 mA
ΔBOFFSET/
ΔT
Magnetic Offset Change
–25
0
25
μT/K
B = 0 mT, IOUT1,2 = 0 mA
BW
Bandwidth (–3 dB)
2–3
–
10
–
kHz
without external Filter1)
NLdif
Non-Linearity
of Differential Output
2–3
–
0.5
2
%
–50 mT < B < 50 mT
NLsingle
Non-Linearity
of Single Ended Output
2, 3
–
2
–
%
fCH
Chopper Frequency over Temp.
2, 3
–
147
–
kHz
VOUTACpp
Peak-to-Peak
AC Output Voltage
2, 3
–
0.6
1.3
V
nmeff
Magnetic RMS Differential
Broadband Noise
2–3
–
10
–
μT
BW = 10 Hz to 10 kHz
fCflicker
Corner Frequency
of 1/f Noise
2–3
–
10
–
Hz
B = 0 mT
fCflicker
Corner Frequency
of 1/f Noise
2–3
–
100
–
Hz
B = 50 mT
ROUT
Output Impedance
2, 3
–
30
50
Ω
IOUT1,2 v 2.5 mA,
TJ = 25 °C, VDD = 6.8 V
ROUT
Output Impedance
over Temperature
2, 3
–
30
150
Ω
IOUT1,2 v 2.5 mA
RthJSB
case
SOT89B-1
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
pad size (see Fig. 3–3)
1)
10
with external 2 pole filter (f3db = 5 kHz), VOUTAC is reduced to less than 1 mV by limiting the bandwith
Micronas
HAL401
DATA SHEET
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–3: Recommended footprint SOT89B,
Dimensions in mm
Note: All dimensions are for reference only. The pad
size may vary depending on the requirements of
the soldering process.
Micronas
11
HAL401
DATA SHEET
V
5
VOUT1
VOUT2
V
0.05
TA = 25 °C
VDD = 6.8 V
B = 0 mT
0.04
TA = –40 °C
VOFFS 0.03
4
VOUT1
VOUT2
TA = 25 °C
TA = 125 °C
0.02
TA = 150 °C
3
0.01
0.00
2
–0.01
–0.02
1
–0.03
–0.04
0
–150 –100 –50
0
50
100
150 mT
–0.05
2
4
6
8
B
14 V
Fig. 3–6: Typical differential output offset
voltage versus supply voltage
mT
2.0
mT
2.0
B = 0 mT
1.5
B = 0 mT
1.5
TA = –40 °C
BOFFS
BOFFS
TA = 25 °C
1.0
VDD = 4.8 V
1.0
TA = 125 °C
0.5
0.0
0.0
–0.5
–0.5
–1.0
–1.0
–1.5
–1.5
2
4
6
8
10
VDD = 6.0 V
VDD = 12 V
TA = 150 °C
0.5
12
14 V
VDD
Fig. 3–5: Typical magnetic offset of
differential output versus supply voltage
12
12
VDD
Fig. 3–4: Typical output voltages
versus magnetic flux density
–2
10
–2
–50 –25
0
25
50
75 100 125 150 °C
TA
Fig. 3–7: Typical magnetic offset of differential
output versus ambient temperature
Micronas
HAL401
DATA SHEET
mV/mT
60
B = ±50 mT
mV/mT
60
55
SB
B = ±50 mT
55
SB
50
50
45
45
40
40
35
35
30
30
TA = –40 °C
TA = 25 °C
25
VDD = 4.8 V
25
VDD = 6.0 V
TA = 125 °C
TA = 150 °C
20
15
2
4
6
8
10
VDD = 12 V
20
12
15
–50 –25
14 V
0
25
50
75 100 125 150 °C
VDD
TA
Fig. 3–8: Typical differential magnetic
sensitivity versus supply voltage
%
1.5
%
1.5
TA = 25 °C
VDD = 6.8 V
1.0
NLdif
Fig. 3–10: Typical differential magnetic
sensitivity versus ambient temperature
NLdif
1.0
0.5
0.5
0.0
0.0
–0.5
–0.5
TA = –40 °C
VDD = 4.8 V
–1.0
VDD = 6.0 V
–1.0
VDD = 12 V
TA = 25 °C
TA = 125 °C
TA = 150 °C
–1.5
–80 –60 –40 –20
0
20
40
60
80 mT
B
Fig. 3–9: Typical non-linearity of differential
output versus magnetic flux density
Micronas
–1.5
–80 –60 –40 –20
0
20
40
60
80 mT
B
Fig. 3–11: Typical non-linearity of differential
output versus magnetic flux density
13
HAL401
DATA SHEET
%
3
NLsingle
%
3
TA = 25 °C
VDD = 6.0 V
2
NLsingle
2
1
1
0
0
–1
–1
VDD = 4.8 V
TA = –40 °C
VDD = 12 V
–2
TA = 25 °C
–2
TA = 125 °C
TA = 150 °C
–3
–80 –60 –40 –20
0
20
40
60
–3
–80 –60 –40 –20
80 mT
0
40
60
80 mT
B
B
Fig. 3–12: Typical single-ended non-linearity
versus magnetic flux density
fCH
20
Fig. 3–14: Typical non-linearity of singleended output versus magnetic flux density
kHz
200
kHz
200
180
180
fCH
160
160
140
140
120
120
100
100
80
80
TA = –40 °C
60
60
TA = 25 °C
VDD = 4.8 V
TA = 125 °C
40
40
VDD = 6.0 V
TA = 150 °C
20
0
2
4
6
8
10
12
14 V
VDD
Fig. 3–13: Typical chopper frequency
versus supply voltage
14
VDD = 12 V
20
0
–50 –25
0
25
50
75 100 125 150 °C
TA
Fig. 3–15: Typical chopper frequency
versus ambient temperature
Micronas
HAL401
DATA SHEET
V
2.25
V
2.4
2.24
2.2
VCM
VCM 2.23
2.0
2.22
2.21
1.8
VDD = 4.8 V
2.20
1.6
VDD = 12 V
2.19
TA = –40 °C
1.4
2.18
TA = 25 °C
2.17
TA = 150 °C
1.2
2.16
1
2
4
6
8
10
12
14 V
2.15
–50 –25
0
25
50
TA
VDD
Fig. 3–16: Typical common mode output
voltage versus supply voltage
mV
1000
VOUT1pp,
VOUT2pp
75 100 125 150 °C
Fig. 3–18: Typical common mode output
voltage versus ambient temperature
mV
1000
TA = 25 °C
VOUT1pp,
VOUT2pp
800
800
VDD = 4.8 V
VDD = 6.0 V
600
600
400
400
200
200
0
2
4
6
8
10
12
VDD
Fig. 3–17: Typical output AC voltage
versus supply voltage
Micronas
14 V
0
–50 –25
VDD = 12 V
0
25
50
75 100 125 150 °C
TA
Fig. 3–19: Typical output AC voltage
versus ambient temperature
15
HAL401
DATA SHEET
mA
25
mA
20
IOUT1,2 = 0 mA
IOUT1,2 = 0 mA
20
IDD 15
IDD
15
10
5
0
10
–5
TA = –40 °C
–10
TA = 25 °C
TA = 125 °C
–15
TA = –40 °C
5
TA = 25 °C
TA = 150 °C
TA = 125 °C
–20
–25
–15
TA = 150 °C
–10
–5
0
5
10
15 V
0
2
3
4
5
6
7
VDD
VDD
Fig. 3–20: Typical supply current
versus supply voltage
Fig. 3–22: Typical supply current
versus supply voltage
mA
20
8 V
mA
25
B = 0 mT
B = 0 mT
IDD
IDD 20
15
15
10
10
VDD = 4.8 V
VDD = 12 V
5
VDD = 4.8 V
5
VDD = 6.0 V
VDD = 12 V
0
–50 –25
0
25
50
75 100 125 150 °C
TA
Fig. 3–21: Typical supply current
versus temperature
16
0
–6
–4
–2
0
2
4
6 mA
IOUT1,2
Fig. 3–23: Typical supply current
versus output current
Micronas
HAL401
DATA SHEET
dBT rms
ǸHz
Ω
200
–100
TA = 25 °C
B = 0 mT
180
VDD = 4.8 V
ROUT 160
nmeff –110
VDD = 6.0 V
VDD = 12 V
140
B = 0 mT
B = 65 mT
120
–120
100
80
–130
60
40
–140
83 nT
ǸHz
20
0
–50 –25
0
25
50
75 100 125 150 °C
f
TA
Fig. 3–24: Typical dynamic differential
output resistance versus temperature
dB
20
sB
–150
0.1
10.0
1000000.0
0.1 1.0
1
10 100.0
100 1000.0
1k 10000.0
10k 100000.0
100k
1M Hz
Fig. 3–26: Typical magnetic noise spectrum
TA = 25 °C
0 dB = 42.5 mV/mT
10
0
–10
–20
–30
–40
10
10
100
100
1000
1k
10000
10 k
100000
100 k
fB
Fig. 3–25: Typical magnetic frequency
response
Micronas
17
HAL401
DATA SHEET
4. Application Notes
4.3. Application Circuit
Mechanical stress on the device surface (caused by the
package of the sensor module or overmolding) can influence the sensor performance.
The normal integrating characteristics of a voltmeter is
sufficient for signal filtering.
The parameter VOUTACpp (see Fig. 2–2) increases with
external mechanical stress. This can cause linearity errors at the limits of the recommended operation conditions.
VDD
4.7n
1
VDD
47 n
330 p
Oscilloscope
HAL 401
OUT1
4.1. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temperature TA).
TJ = TA + ΔT
At static conditions and continuous operation, the following equation applies:
2
Ch1
3.3 k
6.8 n
3.3 k
1k
OUT2
3
1k
Ch2
47 n
330 p
GND
4
Do not connect OUT1 or OUT2 to Ground.
Fig. 4–1: Filtering of output signals
ΔT = IDD * VDD * RthJSB
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ΔT
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Display the difference between channel 1 and channel
2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF
for electromagnetic immunity are recommended.
VDD
1
VDD
Voltage
Meter
HAL 401
OUT1
2
High
4.2. EMC and ESD
Please contact Micronas for detailed information on
EMC and ESD results.
OUT2
3
Low
GND
4
Do not connect OUT1 or OUT2 to Ground.
Fig. 4–2: Flux density measurement with voltmeter
18
Micronas
HAL401
DATA SHEET
VCC
VDD
4.7n
1
VDD
1.33 C
330 p
R+ΔR
0.75 R
HAL 401
OUT1
OUT2
ADC
1.5 R
2
–
R
3
0.22 R
CMOS
OPV
+
330 p
4.4 C
R–ΔR
GND
4
3C
Do not connect OUT1 or OUT2 to Ground.
Fig. 4–3: Differential HAL 401 output to single-ended output
R = 10 kΩ, C = 7.5 nF, ΔR for offset adjustment, BW–3dB = 1.3 kHz
VCCy6 V
VDD
2.2 n
1
4.7 n
330 p
VDD
4.7 k
HAL 401
OUT1
2
–
4.7 k
OUT2
3
CMOS
OPV
+
4.7 k
330 p
4.7 k
4.7 n
1n
4.7 k
–
4.7 k
3.0 k
8.2 n
CMOS
OPV
+
OUT
GND
4
Do not connect OUT1 or OUT2 to Ground.
VEEx*6 V
Fig. 4–4: Differential HAL 401 output to single-ended output (referenced to ground), filter – BW–3dB = 14.7 kHz
Micronas
19
HAL401
DATA SHEET
5. Data Sheet History
1. Final Data Sheet: “HAL 401 Linear Hall Effect Sensor IC”, June 26, 2002, 6251-470-1DS.
First release of the final data sheet.
2. Final Data Sheet: “HAL 401 Linear Hall Effect Sensor IC”, Sept. 14, 2004, 6251-470-2DS.
Second release of the final data sheet.
Major changes:
– new package diagram for SOT89-1
3. Final Data Sheet: “HAL 401 Linear Hall Effect Sensor IC”, Dec. 8, 2008, DSH000018_002EN
Third release of the final data sheet.
Major changes:
– Section 1.5. “Solderability and Welding” updated
– package diagrams updated
– Fig. 3–3: “Recommended footprint SOT89B” added
Micronas GmbH
Hans-Bunte-Strasse 19 · D-79108 Freiburg · P.O. Box 840 · D-79008 Freiburg, Germany
Tel. +49-761-517-0 · Fax +49-761-517-2174 · E-mail: [email protected] · Internet: www.micronas.com
20
Micronas