HBM11PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere HBM18PT FEATURES * * * * * For surface mounted applications Low forward voltage, high current capability Low leakage current Metallurgically bonded construction Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals SMB 0.083 (2.11) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) (2) (1) 0.190 (4.75) MECHANICAL DATA 0.160 (4.06) Case: JEDEC SMB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.003 ounces, 0.093 gram 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. SMB Dimensions in inches and (millimeters) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts o Maximum Average Forward Rectified Current TL = 110 C IO 1.0 Amps IFSM 30 Amps Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range CJ 15 TJ, TSTG 12 pF o -65 to +150 C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Maximum Instantaneous Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 2) NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A VF HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT 1.0 1.3 1.5 1.7 UNITS Volts 5.0 uAmps 100 uAmps IR trr 50 70 nSec 2002-5 RATING CHARACTERISTIC CURVES ( HBM11PT THRU HBM18PT ) 10 NONINDUCTIVE trr +0.5A (-) D.U.T (+) 0 PULSE GENERATOR (NOTE 2) 25 Vdc (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A 1cm NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. SET TIME BASE FOR 10/20 nS/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.5 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) TJ =100oC 1.0 TJ =25oC .1 8P T HB HB T~ 7P HB M1 M1 HB M1 M1 6P BM ~H ~H 4PT 1PT M1 T 15P T 13P BM Pulse Width = 300uS 1% Duty Cycle 1.0 HB TJ =125oC 10 T 10 INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) 1.5 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 0.1 TJ =25oC .01 .001 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1.8 FIG. 6 - TYPICAL JUNCTION CAPACITANCE 35 200 30 JUNCTION CAPACITANCE, ( pF ) PEAK FORWARD SURGE CURRENT, ( A ) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, ( A ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 100 60 40 HBM 11PT 20 HBM1 ~HBM 15PT 6PT~H 10 BM18P T 6 4 TJ =25oC 2 1 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100