Transistors SMD Type PNP Transistors BCX69 (KCX69) ■ Features ● For general AF applications 1.70 ● High collector current 0.1 ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCX 68 (NPN) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Peak Collector Current ICM -2 IB -100 Peak Base Current IBM -200 Collector Power Dissipation PC 1 Thermal Resistance.Junction- to-Ambient RthJA 75 Thermal Resistance.Case-to-Sink Typ RthJS 20 TJ 150 Tstg -65 to 150 Base Current Junction Temperature Storage Temperature range Unit V A mA W K/W ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BCX69 (KCX69) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions VCBO Ic= -100μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -10mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current Collector- base cut-off current ICBO Ta=150℃ Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE IC=-1A, IB=-100mA hFE BCX 69-16 BCX 69-25 IC = -1 A, VCE = -1 V Transition frequency fT VCE= -5V, IC= -100mA,f=20MHz ■ Classification of hfe(2) Marking BCX69 BCX69-10 BCX69-16 BCX69-25 Range CE CF CG CH www.kexin.com.cn nA -10 μA -10 μA -0.6 IC= -1A, VCE=-1V VCE=- 1V, IC= -500mA Unit -100 -0.5 IC= -5mA, VCE=-10V V -1 50 85 BCX 69-10 Max V VEB= -5V , IC=0 VCE= -10V, IC= -5mA DC current gain Typ VCB= -25 V , IE=0 BCX 69 2 Min Collector- base breakdown voltage 85 375 100 160 100 160 250 160 250 375 60 100 MHz Transistors SMD Type PNP Transistors BCX69 (KCX69) ■ Typical Characterisitics Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (t p) Collector cutoff current ICB0 = f (TA) VCB = 25 V www.kexin.com.cn 3 Transistors SMD Type PNP Transistors BCX69 (KCX69) ■ Typical Characterisitics Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V . 4 www.kexin.com.cn