CET CEB6426 N-channel enhancement mode field effect transistor Datasheet

CEP6426/CEB6426
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 17A , RDS(ON) = 66mΩ @VGS = 10V.
RDS(ON) = 85mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter
CEP SERIES
TO-220
Tc = 25 C unless otherwise noted
Symbol
Limit
60
Units
V
VGS
±20
V
ID
17
A
IDM
68
A
35
W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
S
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
0.29
W/ C
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
3.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Dec
http://www.cetsemi.com
CEP6426/CEB6426
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 60V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 8A
1
45
66
mΩ
VGS = 4.5V, ID = 6.4A
VDS = 10V, ID = 4.5A
65
7
85
mΩ
S
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
680
pF
80
pF
45
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6Ω
10
20
ns
2.9
5.8
ns
29.7
59.4
ns
Turn-Off Fall Time
tf
2.5
5
ns
Total Gate Charge
Qg
12.9
17.1
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 30V, ID = 4.5A,
VGS = 10V
1.6
nC
2.5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
17
A
1.2
V
CEP6426/CEB6426
25
25
25 C
20
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6,5V
VGS=4.0V
15
10
5
0
0
1
2
3
4
TJ=125 C
0.0
1.0
2.0
3.0
4.0
5.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
600
400
Coss
200
Crss
0
5
10
15
20
25
2.2
1.9
ID=8A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
5
VDS, Drain-to-Source Voltage (V)
800
1.2
10
0
1000
1.3
15
5
1200
0
20
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10 V =30V
DS
ID=4.5A
6
4
2
0
0
2
1ms
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP6426/CEB6426
3
6
9
12
10
1
100ms
DC
10
10
15
10ms
0
TC=25 C
TJ=175 C
Single Pulse
-1
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
td(off)
tr
td(on)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
10
PDM
0.1
-1
0.05
0.02
0.01
Single Pulse
t1
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-2
t2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
3
10
4
2
Similar pages