CEP6426/CEB6426 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 17A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit 60 Units V VGS ±20 V ID 17 A IDM 68 A 35 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.29 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Dec http://www.cetsemi.com CEP6426/CEB6426 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS(th) RDS(on) gFS VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 8A 1 45 66 mΩ VGS = 4.5V, ID = 6.4A VDS = 10V, ID = 4.5A 65 7 85 mΩ S Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 680 pF 80 pF 45 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 1A, VGS = 10V, RGEN = 6Ω 10 20 ns 2.9 5.8 ns 29.7 59.4 ns Turn-Off Fall Time tf 2.5 5 ns Total Gate Charge Qg 12.9 17.1 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 30V, ID = 4.5A, VGS = 10V 1.6 nC 2.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 17 A 1.2 V CEP6426/CEB6426 25 25 25 C 20 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V VGS=4.0V 15 10 5 0 0 1 2 3 4 TJ=125 C 0.0 1.0 2.0 3.0 4.0 5.0 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 600 400 Coss 200 Crss 0 5 10 15 20 25 2.2 1.9 ID=8A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 5 VDS, Drain-to-Source Voltage (V) 800 1.2 10 0 1000 1.3 15 5 1200 0 20 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 V =30V DS ID=4.5A 6 4 2 0 0 2 1ms RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP6426/CEB6426 3 6 9 12 10 1 100ms DC 10 10 15 10ms 0 TC=25 C TJ=175 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff td(off) tr td(on) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 10 PDM 0.1 -1 0.05 0.02 0.01 Single Pulse t1 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2