Diode Semiconductor Korea Schottky Barrier diode FEATURES z Pb Extremely Fast switching speed. CMPSH-3/A/C/S Lead-free z Low forward voltage. z Power dissipation Pd=350mW z Pb-Free package is available. CMPSH-3 APPLICATIONS z CMPSH-3A CMPSH-3C CMPSH-3S Fast switching application. SOT-23 ORDERING INFORMATION Type No. CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Marking Package Code D95 DB1 DB2 DA5 SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak Repetitive Peak reverse voltage VRRM 30 V Forward Continuous Current IF 100 mA Peak Repetitive Forward Current IFRM 350 mA IFSM 750 mA Power Dissipation Pd 350 mW Thermal Resistance RθJA 357 ℃/W Junction Storage temperature TJ,TSTG -55-150 ℃ Forward Surge Current tp=10ms www.diode.kr Diode Semiconductor Korea Schottky Barrier diode CMPSH-3/A/C/S ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Reverse Breakdown Voltage V(BR) 30 Typ. Max. Unit Conditions V IR=100μA VF1 0.29 0.33 V IF=2.0mA VF2 0.40 0.45 V IF=15mA VF3 0.74 1.00 V IF=100mA Reverse current IR 90 25 500 100 nA μA VR=25V VR=25V TA=100℃ Diode Capacitanc CD 7.0 pF VR=1V,f=1MHz Reverse Recovery Time trr ns IF=IR=10mA Irr=0.1XIR,RL=100Ω Forward voltage 5 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm www.diode.kr Diode Semiconductor Korea Schottky Barrier diode CMPSH-3/A/C/S SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping CMPSH-3/A/C/S SOT-23 3000/Tape&Reel www.diode.kr