MSN23P09S 20V P-Channel MOSFETs Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V • Improved dv/dt capability • Green Device Available • 100% EAS Guaranteed • Fast Switching • RoHS compliant package Application • Notebook • Load Switch • Battery Protection • Hand-held Instruments SOT23-3S Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±10 V Continuous Drain Current (TC=25°C) -5.8 Continuous Drain Current (TC=100°C) -3.7 ID IDM 1 Drain Current Pulsed Publication Order Number: [MS69P05] -23.2 A A © Bruckewell Technology Corporation Rev. A -2016 MSN23P09S 20V P-Channel MOSFETs Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter PD Value Unit Power Dissipation (TC = 25°C) 1.56 W Power Dissipation – Derate above 25°C 0.012 W/°C TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature Range -55 to +150 °C Thermal Characteristics Symbol Parameter RθJA Thermal Resistance,Junction-to-Ambient Min. -- Value Typ. Units Max. -- 80 °C/W Electrical Characteristics (TJ=25°C, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS VGS =0 V , ID = 250μA -60 -- -- V -- -0.05 -- V/°C -- -- -- -- △BVDSS /△TJ Drain-Source Breakdown Voltage BVDSS Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage,Forward ID = -1mA, Referenced to 25°C VDS = -20 V , TJ= 25°C VDS = -16 V , TJ= 125°C VGS = ±10 V , VDS = 0 V -1 -10 ±100 uA nA On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS(th) VDS = VGS, ID = 250 uA -0.3 -0.6 -1 V VGS = -4.5 V , ID = -4 A 28 33 VGS = -2.5 V , ID = -3 A 37 45 VGS = -1.8 V , ID = -2 A 49 65 2 mV/°C 8.4 S RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resis-tance △VGS(th) Gate Threshold Voltage VGS = VGS, ID = 250 uA gfs Forward Transconductance VDS = -10V , IS = -3 A Dynamic Characteristics Symbol Parameter Test Conditions mΩ Min Typ. Max. Units VDS = -10 V, -- 16.1 25 nC VGS = -4.5 V, -- 1.8 3 nC ID = -4 A -- 3.8 7 nC 2,3 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance VGS = 0 V, -- 1440 2100 pF COSS Output Capacitance VDS = -15 V, -- 155 230 pF CRSS Reverse Transfer Capacitance f = 1MHz -- 115 170 pF 2,3 2,3 Publication Order Number: [MS69P05] © Bruckewell Technology Corporation Rev. A -2016 MSN23P09S 20V P-Channel MOSFETs Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Min Typ. Max. Units IS Continuous Source Current VD=VG=0V -- -- -5.8 A ISM Pulsed Source Current Force Current -- -- -23.2 A VSD Diode Forward Voltage IS = -1 A , VGS = 0 V , TJ=25°C -- -- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Publication Order Number: [MS69P05] © Bruckewell Technology Corporation Rev. A -2016 MSN23P09S 20V P-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MS69P05] © Bruckewell Technology Corporation Rev. A -2016 MSN23P09S 20V P-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MS69P05] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2016 MSN23P09S 20V P-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. 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Publication Order Number: [MS69P05] © Bruckewell Technology Corporation Rev. A -2016