AP95T06GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic 60V RDS(ON) 8.5mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 75A S Description AP95T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP95T06GP) are available for low-profile applications. G D S G D TO-263(S) TO-220(P) S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Drain Current, VGS @ 10V ID@TC=100℃ Drain Current, VGS @ 10V 3 1 Rating Units 60 V +20 V 75 A 66 A IDM Pulsed Drain Current 260 A PD@TC=25℃ Total Power Dissipation 138 W 1.11 W/℃ Linear Derating Factor 4 EAS Single Pulse Avalanche Energy 450 mJ IAR Avalanche Current 30 A TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 5 Value Units 0.9 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201501154 AP95T06GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 8.5 mΩ VGS=4.5V, ID=20A - - 12 mΩ V VGS=0V, ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 gfs Forward Transconductance VDS=10V, ID=45A - 72 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125 C) VDS=48V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=45A - 72 115 nC Qgs Gate-Source Charge VDS=48V - 16 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 53 - nC td(on) Turn-on Delay Time VDS=30V - 20 - ns tr Rise Time ID=45A - 76 - ns td(off) Turn-off Delay Time RG=3.3Ω - 67 - ns tf Fall Time VGS=10V - 109 - ns Ciss Input Capacitance VGS=0V - 5700 9200 pF Coss Output Capacitance VDS=25V - 900 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 560 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Min. Typ. IS=45A, VGS=0V - - 1.3 V o Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=20A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 60 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A . 4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. 5.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP95T06GS/P-HF 250 120 10V 7.0 V ID , Drain Current (A) 200 10V 7.0 V 5.0V 4.5V T C = 150 o C ID , Drain Current (A) o T C = 25 C 5.0V 150 4.5V 100 80 40 V G =3.0V 50 V G =3.0V 0 0 0 3 6 12 8.0V 9 0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6 9 12 Fig 2. Typical Output Characteristics 11 1.6 I D =45A V G =10V I D =20A o Normalized RDS(ON) T C =25 C 10 RDS(ON) (mΩ ) 3 V DS , Drain-to-Source Voltage (V) 9 1.2 0.8 8 7 0.4 2 4 6 8 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 50 40 Normalized VGS(th) IS(A) 1.5 30 o T j =150 C o T j =25 C 20 1.0 0.5 10 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP95T06GS/P-HF f=1.0MHz 10 10000 I D = 45 A C iss V DS = 30 V V DS = 38 V V DS = 48 V 6 C (pF) VGS , Gate to Source Voltage (V) 8 4 1000 C oss C rss 2 0 100 0 20 40 60 80 100 120 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 1000 ID (A) 100 100us 1ms 10 10ms 100ms DC T c =25 o C Single Pulse 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 130 VG V DS =5V o T j =25 C 104 ID , Drain Current (A) o T j =150 C QG 4.5V 78 QGS QGD 52 26 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP95T06GS/P-HF MARKING INFORMATION TO-263 95T06GS Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence TO-220 95T06GP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5