Advance Technical Information IXFK 44N55Q IXFX 44N55Q HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) Q-CLASS N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM (IXFX) Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 550 550 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 44 A IDM TC = 25°C, pulse width limited by TJM 176 A IAR TC = 25°C 44 A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C (TAB) D TO-264 AA (IXFK) G D TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight PLUS 247 TO-264 TO-264 0.4/6 Nm/lb.in. 6 10 g g Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA 550 V VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved 550 V 44 A Ω 120 mΩ trr ≤ 250 ns Single MOSFET Die Symbol = = = Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ±100 nA TJ = 125°C 100 µA 2 mA 120 mΩ G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l 98918 (04/02) IXFK 44N55Q IXFX 44N55Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25 Note 1 30 Ciss S 6400 pF 850 pF Crss 180 pF td(on) 30 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 ns td(off) RG = 1 Ω (External), 75 ns 10 ns 190 nC 40 nC 86 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.26 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM K/W IF = 25A,-di/dt = 100 A/µs, VR = 100 V 44 A 176 A 1.5 V 250 ns 1.0 µC 8 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1