ACTIVE-SEMI ACT334 High performance activepsrtm primary switching regulator Datasheet

ACT334
Rev 2, 14-Nov-12
High Performance ActivePSRTM Primary Switching Regulator
FEATURES
over temperature conditions.
• Ultra Low Standby Power < 30mW
The ACT334 ActivePSRTM is optimized for high
performance, cost-sensitive applications, and
utilizes Active-Semi’s proprietary primary-side
feedback architecture to provide accurate constant
voltage, constant current (CV/CC) regulation
without the need of an opto-coupler or reference
device. Integrated line and primary inductance
compensation circuitry provides accurate constant
current operation despite wide variations in line
voltage and primary inductance. Integrated output
cord resistance compensation further enhances
output accuracy. The ACT334 achieves excellent
regulation and transient response, yet requires less
than 30mW of standby power.
• Patented Primary Side Regulation
Technology
• Suitable Operation Frequency up to 85kHZ
• Proprietary Fast Startup Circuit
• Integrated Line and Primary Inductance
Compensation
• Integrated Programmable Output Cord
Resistance Compensation
• Line Under-Voltage, Output Over-Voltage,
Output Short-Circuit and Over-Temperature
Protection
The ACT334 is optimized for compact size 2W to
6W charger applications. It is available in spacesaving 6 pin SOT23-6 package.
• Complies with all Global Energy Efficiency
and CEC Average Efficiency Standards
• Adjustable Power from 2W to 6W
• Minimum External Components
• Tiny SOT23-6 Package
Figure 1:
Simplified Application Circuit
APPLICATIONS
• Chargers for Cell Phones, PDAs, MP3,
Portable Media Players, DSCs, and Other
Portable Devices and Appliances
• RCC Adapter Replacements
• Linear Adapter Replacements
• Standby and Auxiliary Supplies
GENERAL DESCRIPTION
The ACT334 belongs to the high performance
patented ActivePSRTM Family of Universal-input
AC/DC off-line controllers for battery charger and
adapter applications. It is designed for flyback
topology working in discontinuous conduction mode
(DCM). The ACT334 meets all of the global energy
efficiency regulations (CEC, European Blue Angel,
and US Energy Star standards) while using very
few external components.
The ACT334 ensures safe operation with complete
protection against all fault conditions. Built-in
protection circuitry is provided for output shortcircuit, output over-voltage, line under-voltage, and
Innovative PowerTM
-1-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
ORDERING INFORMATION
PART NUMBER
TEMPERATURE RANGE
PACKAGE
PINS
PACKING
METHOD
TOP MARK
ACT334US-T
-40°C to 85°C
SOT23-6
6
TAPE & REEL
FSTA
PIN CONFIGURATION
SOT23-6
ACT334US-T
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
1
SW
Switch Drive. Switch node for the external NPN transistor. Connect this pin to the external
power NPN’s emitter. This pin also supplies current to VDD during startup.
2
GND
3
BD
4
VDD
Power Supply. This pin provides bias power for the IC during startup and steady state
operation.
5
FB
Feedback Pin. Connect this pin to a resistor divider network from the auxiliary winding.
6
CS
Current Sense Pin. Connect an external resistor (RCS) between this pin and ground to set
peak current limit for the primary switch. The peak current limit is set by (0.396V × 0.9) /
RCS. For more detailed information, see Application Information.
Innovative PowerTM
Ground.
Base Drive. Base driver for the external NPN transistor.
-2-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VALUE
UNIT
-0.3 to + 28
V
100
mA
-0.3 to + 6
V
Internally limited
A
Maximum Power Dissipation (derate 4.5mW/˚C above TA = 50˚C)(SOT23-6)
0.45
W
Junction to Ambient Thermal Resistance (θJA)(SOT23-6)
220
˚C/W
Operating Junction Temperature
-40 to 150
˚C
Storage Junction
-55 to 150
˚C
300
˚C
VDD, BD, SW to GND
Maximum Continuous VDD Current
FB, CS to GND
Continuous SW Current
Lead Temperature (Soldering, 10 sec)
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
(VDD = 14V, VOUT = 5V, LP = 1.6mH, NP = 140, NS = 8, NA = 23, TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply
VDD Turn-On Voltage
VDDON
VDD Rising from 0V
17.6
18.6
19.6
V
VDD Turn-Off Voltage
VDDOFF
VDD Falling after Turn-on
5.25
5.5
5.75
V
IDD
VDD = 14V, after Turn-on
240
340
440
uA
25
45
µA
1
µA
Supply Current
Start Up Supply Current
IDDST
BD Current during Startup
IBDST
VDD = 14V, before Turn-on
Internal Soft Startup Time
10
ms
Oscillator
Switching Frequency
Maximum Switching Frequency
fSW
100% VOUTCV @ full load
80
25% VOUTCV @ full load
40
kHz
FCLAMP
89
98
107
kHz
DMAX
65
75
85
%
Effective FB Voltage
VFB
2.17
2.192
2.216
V
FB Leakage Current
IFBLK
1
µA
Maximum Duty Cycle
Feedback
Output Cable Resistance
Compensation
Innovative PowerTM
DVCOMP
No RCORD between VDD and SW
0
RCORD = 300k
3
RCORD = 150k
6
RCORD = 75k
9
RCORD = 33k
12
-3-
%
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
ELECTRICAL CHARACTERISTICS CONT’D
(VDD = 14V, VOUT = 5V, LP = 1.5mH, NP = 140, NS = 8, NA = 23, TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
600
mA
412
mV
Current Limit
SW Current Limit Range
100
ILIM
CS Current Limit Threshold
VCSLIM
tOFF_DELAY = 0
Leading Edge Blanking Time
380
396
200
300
ns
Driver Outputs
Switch ON-Resistance
RON
ISW = 50mA
SW Off Leakage Current
1.6
VSW = VDD = 22V
3
Ω
1
µA
VDDON
+4
V
Protection
VDD Latch-Off Voltage
VDDON
+2
VDDOVP
VDDON
+3
Thermal Shutdown Temperature
135
˚C
Thermal Hysteresis
20
˚C
134
µA
Line UVLO
IFBUVLO
FUNCTIONAL BLOCK DIAGRAM
VDD
BD
SW
REGULATOR ON
&
UVLO
BASE
DRIVER
OTP
REFERENCE
OVP
+
-
+
-
+
2.20V
SIGNAL
FILTER
-
FB
LOGIC
+
CABLE
COMPENSATION
OSCILLATOR
0.4V
-
CURRENT
SHAPING
+
G
Innovative PowerTM
CS
-4-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
FUNCTIONAL DESCRIPTION
increases to ramp up the switch current to bring the
secondary output back to regulation. The output
regulation voltage is determined by the following
relationship:
As shown in the Functional Block Diagram, to
regulate the output voltage in CV (constant voltage)
mode, the ACT334 compares the feedback voltage
at FB pin to the internal reference and generates an
error signal to the pre-amplifier. The error signal,
after filtering out the switching transients and
compensated with the internal compensation
network, modulates the external NPN transistor
peak current at CS pin with current mode PFWM
(Pulse Frequency and Width Modulation) control.
To regulate the output current in CC (constant
current) mode, the oscillator frequency is modulated
by the output voltage.
⎛
R
VOUTCV = 2 .20 V × ⎜⎜1 + FB 1
R FB 2
⎝
(1)
where RFB1 (R5) and RFB2 (R6) are top and bottom
feedback resistor, NS and NA are numbers of
transformer secondary and auxiliary turns, and VD
is the rectifier diode forward drop voltage at
approximately 0.1A bias.
SW is a driver output that drives the emitter of an
external high voltage NPN transistor. This baseemitter-drive method makes the drive circuit the
most efficient.
Standby (No Load) Mode
In no load standby mode, the ACT334 oscillator
frequency is further reduced to a minimum
frequency while the current pulse is reduced to a
minimum level to minimize standby power. The
actual minimum switching frequency is
programmable with an output preload resistor.
Fast Startup
VDD is the power supply terminal for the ACT334.
During startup, the ACT334 typically draws only
25μA supply current. The startup resistor from the
rectified high voltage DC rail supplies current to the
base of the NPN transistor. This results in an
amplified emitter current to VDD through the SW
pin via Active-Semi's proprietary fast-startup
circuitry until it exceeds the VDDON threshold 19V. At
this point, the ACT334 enters internal startup mode
with the peak current limit ramping up in 10ms.
After switching starts, the output voltage begins to
rise. The VDD bypass capacitor must supply the
ACT334 internal circuitry and the NPN base drive
until the output voltage is high enough to sustain
VDD through the auxiliary winding. The VDDOFF
threshold is 5.5V; therefore, the voltage on the VDD
capacitor must remain above 5.5V while the output
is charging up.
Loop Compensation
The ACT334 integrates loop compensation circuitry
for simplified application design, optimized transient
response, and minimal external components.
Output Cable Resistance Compensation
The ACT334 provides programmable output cable
resistance compensation during constant voltage
regulation, monotonically adding an output voltage
correction up to predetermined percentage at full
power. There are four levels to program the output
cable compensation by connecting a resistor (R10
in Figure 6) from the SW pin to VDD pin. The
percentage at full power is programmable to be 3%,
6%, 9% or 12%, and by using a resistor value of
300k, 150k, 75k or 33k respectively. If there is no
resistor connection, there is no cord compensation.
Constant Voltage (CV) Mode Operation
This feature allows for better output voltage
accuracy by compensating for the output voltage
droop due to the output cable resistance.
In constant voltage operation, the ACT334 captures
the auxiliary flyback signal at FB pin through a
resistor divider network R5 and R6 in Figure 6. The
signal at FB pin is pre-amplified against the internal
reference voltage, and the secondary side output
voltage is extracted based on Active-Semi's
proprietary filter architecture.
Constant Current (CC) Mode Operation
When the secondary output current reaches a level
set by the internal current limiting circuit, the
ACT334 enters current limit condition and causes
the secondary output voltage to drop. As the output
voltage decreases, so does the flyback voltage in a
proportional manner. An internal current shaping
circuitry adjusts the switching frequency based on
the flyback voltage so that the transferred power
remains proportional to the output voltage, resulting
This error signal is then amplified by the internal
error amplifier. When the secondary output voltage
is above regulation, the error amplifier output
voltage decreases to reduce the switch current.
When the secondary output voltage is below
regulation, the error amplifier output voltage
Innovative PowerTM
⎞ NS
⎟⎟ ×
− VD
⎠ NA
-5-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
FUNCTIONAL DESCRIPTION CONT’D
in a constant secondary side output current profile.
The energy transferred to the output during each
switching cycle is ½(LP × ILIM2) × η, where LP is the
transformer primary inductance, ILIM is the primary
peak current, and η is the conversion efficiency.
From this formula, the constant output current can
be derived:
2
IOUTCC =
⎛ 0.396V × 0.9 ⎞ ⎛ η × fSW
1
⎟⎟ × ⎜⎜
× LP × ⎜⎜
2
RCS
⎝
⎠ ⎝ VOUTCV
⎞
⎟⎟
⎠
die temperature. The typical over temperature
threshold is 135°C with 20°C hysteresis. When the
die temperature rises above this threshold the
ACT334 is disabled until the die temperature falls
by 20°C, at which point the ACT334 is re-enabled.
TYPICAL APPLICATION
Design Example
(2)
The design example below gives the procedure for
a DCM flyback converter using the ACT334. Refer
to Application Circuit in Figure 6, the design for a
charger application starts with the following
specification:
where fSW is the switching frequency and VOUTCV is
the nominal secondary output voltage.
The constant current operation typically extends
down to lower than 40% of nominal output voltage
regulation.
Input Voltage Range
Primary Inductance Compensation
The ACT334 integrates a built-in proprietary
(patent-pending) primary inductance compensation
circuit to maintain constant current regulation
despite variations in transformer manufacturing.
The compensated range is ±7%.
Primary Inductor Current Limit Compensation
5W
Output Voltage, VOUTCV
5.0V
Full Load Current, IOUTFL
1A
OCP Current, IOUTMAX
1.3A
Transformer Efficiency, ηxfm
0.90
System Efficiency CC, ηsystem
0.72
System Efficiency CV, η
0.73
The operation for the circuit shown in Figure 6 is as
follows: the rectifier bridge D1−D4 and the capacitor
C1/C2 convert the AC line voltage to DC. This
voltage supplies the primary winding of the
transformer T1 and the startup resistor R7/R8. The
primary power current path is formed by the
transformer’s primary winding, the NPN transistor,
the ACT334 internal MOSFET and the current
sense resistor R9. The network consisting of
capacitor C4 and diode D6 provides a VDD supply
voltage for ACT334 from the auxiliary winding of the
transformer. C4 is the decoupling capacitor of the
supply voltage and energy storage component for
startup. The diode D8 and the capacitor C5 rectifies
and filters the output voltage. The resistor divider
consisting of R5 and R6 programs the output
voltage.
The ACT334 integrates a primary inductor peak
current limit compensation circuit to achieve
constant input power over line and load ranges.
Protection
The ACT334 incorporates multiple protection
functions including over-voltage, over-current and
over-temperature.
Output Short Circuit Protection
When the secondary side output is short circuited,
the ACT334 enters hiccup mode operation. In this
condition, the VDD voltage drops below the VDDOFF
threshold and the auxiliary supply voltage
collapses. This turns off the ACT334 and causes it
to restart. This hiccup behavior continues until the
short circuit is removed.
The minimum and maximum DC input voltages can
be calculated:
Output Over Voltage Protection
The ACT334 includes output over-voltage
protection circuitry, which shuts down the IC when
the output voltage is 40% above the normal
regulation voltage for 4 consecutive switching
cycles. The ACT334 enters hiccup mode when an
output over voltage fault is detected.
1
− tC )
2 fL
η × C IN
2 POUT (
VINDCMIN =
=
Over Temperature Shutdown
2V
2
ACMIN
−
1
2 × 5(
− 3 . 8 ms )
2
2
×
50
2 × 85 −
≈ 90 V
72 % × 2 × 6 . 8 μ F
VINDCMAX = 2 × VACMAX = 2 × 265 = 375V
The thermal shutdown circuitry detects the ACT334
Innovative PowerTM
85VAC - 265VAC, 50/60Hz
Output Power, PO
-6-
(3)
(4)
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
TYPICAL APPLICATION CONT’D
where η is the estimated circuit efficiency, fL is the
line frequency, tC is the estimated rectifier
conduction time, CIN is empirically selected to be
2 × 6.8µF electrolytic capacitors based on the
3µF/W rule of thumb.
VINDCMAX × ( VOUTCV + VDS ) 375 × ( 5 + 0 .2 )
=
= 73 V
VDREV − VOUTCV
40 × 0 . 8 − 5
2 × I IN
2 × 75 .6
=
= 338 mA
D
45 %
VINDCMIN × D
90 × 45%
=
≈ 1.6 mH
IPK × fSW
338mA × 76kHz
LP × IPK
OUTCV
+ VDS ) ×
NP
NS
<
0.9
N
⇒ P > 17.1
fSW
NS
(13)
0.9 ×VCSLIM
(IOUTFL + IOUTMAX) ×VOUT
=
0.9 × 0.396
= 1R
(1 +1.3 ) × 5
⎛ 0.72 ⎞
1.6 ×75 × ⎜
⎟
⎝ 0.90 ⎠
are
NA LP
23 1.6
×
×K =
×
× 229656 ≈ 60.4k
NP RCS
140 1
R FB 2 =
(14)
selected
(15)
VFB
( VOUTCV + VDS )
NA
− VFB
NS
R FB 1
(16)
2 .20
=
× 60 .4 = 10 .5 k
( 5 + 0 . 4 ) × 2 . 87 − 2 .20
(6)
When selecting the output capacitor, a low ESR
electrolytic capacitor is recommended to minimize
ripple from the current ripple. The approximate
equation for the output capacitance value is given by:
(7)
COUT =
(8)
IOUTCC× D
1× 0.45
=
= 120μF
fSW ×△VRIPPLE 75kHz× 50mV
(17)
A 470µF electrolytic capacitor is used to keep the
ripple small.
PCB Layout Guideline
Good PCB layout is critical to have optimal
performance. Decoupling capacitor (C4), current
sense resistor (R9) and feedback resistor (R5/R6)
should be placed close to VDD, CS and FB pins
respectively. There are two main power path loops.
One is formed by C1/C2, primary winding, NPN
transistor and the ACT334. The other is the
secondary winding, rectifier D8 and output
capacitors (C5). Keep these loop areas as small as
possible. Connect high current ground returns, the
input capacitor ground lead, and the ACT334 G pin
(9)
(10)
Where VDA is diode forward voltage of the auxiliary
side and VR is the resister voltage.
An EFD15 transformer gapped core with an
effective inductance ALE of 82nH/T2 is selected.
The number of turns of the primary winding is:
Innovative PowerTM
NA
× N S = 2 . 87 × 8 = 23
NS
Where K is IC constant and K = 229656.
The auxiliary to secondary turns ratio NA/NS:
NA
VDD +VDA +VR
15 + 0.3 + 0.8
=
=
= 2.87
NS VOUTCV +VDS +VCORD 5 + 0.20 + 0.402
NA =
RFB1 =
ACT334 needs to work in DCM in all conditions,
thus NP/NS should meet
LP × IPK
+
VINDCMIN (V
(12)
The voltage feedback resistors
according to below equation:
(5)
The primary inductance of the transformer:
LP =
NS
1
× NP =
× 140 = 8
NP
17 .5
⎛η
⎞
LP × fSW × ⎜⎜ system ⎟⎟
⎝ ηxfm ⎠
The maximum input primary peak current at full
load base on duty of 45%:
I PK =
NS =
RCS =
The maximum duty cycle is set to be 45% at low
line voltage 85VAC and the circuit efficiency is
estimated to be 73%. Then the full load input
current is:
VOUTCV × IOUTPL
5 ×1
=
= 75 .6 mA
VINDCMIN × η
90 × 72 %
(11)
The current sense resistance (RCS) determines the
current limit value based on the following equation:
where VDS is the Schottky diode forward voltage,
VDREV is the maximum reverse voltage rating of the
diode and VOUTCV is the output voltage.
IIN =
1 .6 mH
= 140
82 nH / T 2
The number of turns of secondary and auxiliary
windings can be derived when Np/Ns=17.5:
When the transistor is turned off, the voltage on the
transistor’s collector consists of the input voltage
and the reflected voltage from the transformer’s
secondary winding. There is a ringing on the rising
top edge of the flyback voltage due to the leakage
inductance of the transformer. This ringing is
clamped by a RCD network if it is used. Design this
clamped voltage as 50V below the breakdown of
the NPN transistor. The flyback voltage has to be
considered with selection of the maximum reverse
voltage rating of secondary rectifier diode. If a 40V
Schottky diode is used, then the flyback voltage can
be calculated:
VRO =
LP
=
ALE
NP =
-7-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
TYPICAL APPLICATION CONT’D
to a single point (star ground configuration).
output information can be sent back into the IC to
do the appropriate control.
NPN Selection Guideline
VFB waveforms of Figure 3, Figure 4, and Figure 5
violate the sampling design margin and are not
recommended. Figure 3 has very long overshoot
period. Figure 4, and Figure 5 have very long
ringing period. The undesired waveforms cause the
IC to operate in an unstable mode easily due to
wrong feedback information.
NPN transistors with HFE of 20 to 30 are highly
recommended in the design due to the start up
time. If the HFE is too low the start up time
becomes longer because of 30M start up resister.
VFB Sampling Waveforms
ACT334 senses the output voltage information
through the VFB waveforms. Proper VFB waveforms
are required for IC to operate in a stable status. To
avoid mis-sampling, 1.8µs blanking time is added to
blank the ringing period due to the leakage
inductance and the circuit parasitic capacitance.
Figure 2 is the recommended VFB waveform to
guarantee the correct sampling point so that the
Figure 3
Figure 2
1.8µs
1.8µs
Figure 5
Figure 4
1.8µs
1.8µs
Innovative PowerTM
-8-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
Figure 6:
Universal VAC Input, 5V/1A Output Charger
Table 1: ACT334 Bill of Materials
Item
Reference
1
C1,C2
2
Description
QTY
Capacitor, Electrolytic, 6.8µF/400V, 10x12mm(Low leakage current)
2
C3
Capacitor, Ceramic,220pF/500V,1206,SMD
1
3
C4
Capacitor, Ceramic,4.7µF/35V,1206,SMD
1
4
C5,C6
Capacitor, Electrolytic, 680µF/10V, 8x12mm
2
5
C9
Capacitor, Ceramic,1000pF/50V, 0805, SMD
1
6
D1-D4
Diode,Rectifier,1000V/1A,1N4007, DO-41
4
7
D5,D6
Diode,Ultra Fast, FR107,1000V/1.0A, DO-41
2
8
D8
Diode, schottky, 40V/5A, SB540, DO-15
1
9
L1
Axial Inductor, 1.5mH, 0410,Dip
1
10
Q1
Transistor, HFE 20-25, NPN,13003,TO-126
1
11
FR1
Wire Round Resistor,1W,10Ω, KNP, 5%
1
12
R2
Chip Resistor, 1.5mΩ, 1206, 5%
1
13
R3
Chip Resistor, 100Ω, 1206, 5%
1
14
R1
Chip Resistor, 22Ω, 0805, 5%
1
15
R4
Chip Resistor, 15Ω, 0805, 5%
1
16
R5
Chip Resistor, 60.4kΩ, 0805,1%
1
17
R6
Chip Resistor, 10.5kΩ, 0805, 1%
1
18
R7,R8
Chip Resistor, 15mΩ, 1206, 5%
2
19
R9
Chip Resistor, 1.0Ω, 1206,1%
1
20
R10
Chip Resistor, 162kΩ, 0805, 5%
1
21
R11
Chip Resistor, 3.6kΩ, 0805, 5%
1
22
R13
Chip Resistor, 10Ω, 0805, 5%
1
23
T1
Transformer, Lp=1.6mH, EFD15
1
24
U1
IC, ACT334US-T,SOT23-6
1
Innovative PowerTM
-9-
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(Circuit of Figure 6, unless otherwise specified.)
Start Up Supply Current vs. Temperature
VDD ON/OFF Voltage vs. Temperature
VDDON
16.5
26
24
14.5
IDDST (µA)
VDDON and VDDOFF (V)
18.5
ACT334-008
28
ACT334-007
20.5
12.5
10.5
22
20
18
8.5
VDDOFF
6.5
16
4.5
14
0
25
50
75
0
Temperature (°C)
50
75
Normalized ILIM vs. Temperature
FB Voltage vs. Temperature
1.01
Normalized ILIM (mA)
2.20
ACT334-010
1.02
ACT334-009
2.25
VFB (V)
25
Temperature (°C)
2.15
2.10
2.05
1.00
0.99
0.98
0.97
0.96
2.00
0.95
0
25
50
75
0
Temperature (°C)
25
50
75
Temperature (°C)
Internal MOSFET RON vs. Temperature
ACT334-012
2.4
2.0
RON (Ω)
1.6
1.2
0.8
0.4
0.0
0
25
50
75
Temperature (°C)
Innovative PowerTM
- 10 -
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Copyright © 2012 Active-Semi, Inc.
ACT334
Rev 2, 14-Nov-12
PACKAGE OUTLINE
SOT23-6 PACKAGE OUTLINE AND DIMENSIONS
D
θ
0.2
SYMBOL
E
E1
c
e
A
A1
A2
e1
DIMENSION IN
MILLIMETERS
DIMENSION IN
INCHES
MIN
MAX
MIN
MAX
A
-
1.450
-
0.057
A1
0.000
0.150
0.000
0.006
A2
0.900
1.300
0.035
0.051
b
0.300
0.500
0.012
0.020
c
0.080
0.220
0.003
0.009
L
b
D
2.900 BSC
0.114 BSC
E
1.600 BSC
0.063 BSC
E1
2.800 BSC
0.110 BSC
e
0.950 BSC
0.037 BSC
e1
1.900 BSC
0.075 BSC
L
0.300
0.600
0.012
0.024
θ
0°
8°
0°
8°
Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each
product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use
as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of
the use of any product or circuit described in this datasheet, nor does it convey any patent license.
Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact
[email protected] or visit http://www.active-semi.com.
is a registered trademark of Active-Semi.
Innovative PowerTM
- 11 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
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