LM136-2.5-N www.ti.com SNVS749F – MAY 1998 – REVISED APRIL 2013 LM136-2.5-N, LM236-2.5-N, LM336-2.5-NV Reference Diode Check for Samples: LM136-2.5-N FEATURES 1 • • • • • • • 2 Low Temperature Coefficient Wide Operating Current of 400 μA to 10 mA 0.2Ω Dynamic Impedance ±1% Initial Tolerance Available Specified Temperature Stability Easily Trimmed for Minimum Temperature Drift Fast Turn-On DESCRIPTION The LM136-2.5-N/LM236-2.5-N and LM336-2.5-N integrated circuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the LM136-2.5-N allows the reference voltage and temperature coefficient to be trimmed easily. The LM136-2.5-N series is useful as a precision 2.5V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 2.5V make it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136-2.5-N operates as a shunt regulator, it can be used as either a positive or negative voltage reference. The LM136-2.5-N is rated for operation over −55°C to +125°C while the LM236-2.5-N is rated over a −25°C to +85°C temperature range. The LM336-2.5-N is rated for operation over a 0°C to +70°C temperature range. See the connection diagrams for available packages. Connection Diagram TO-92 Plastic Package TO Metal Can Package Figure 1. Bottom View See Package Number LP Figure 2. Bottom View See Package Number NDV SOIC Package Figure 3. Top View See Package Number D 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1998–2013, Texas Instruments Incorporated LM136-2.5-N SNVS749F – MAY 1998 – REVISED APRIL 2013 www.ti.com Typical Applications Figure 4. 2.5V Reference † Adjust to 2.490V Any silicon signal diode * Figure 5. 2.5V Reference with Minimum Temperature Coefficient Figure 6. Wide Input Range Reference 2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N LM136-2.5-N www.ti.com SNVS749F – MAY 1998 – REVISED APRIL 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Reverse Current 15 mA Forward Current 10 mA −60°C to +150°C Storage Temperature Operating Temperature Range (3) Soldering Information LM136 −55°C to +150°C LM236 −25°C to +85°C LM336 0°C to +70°C TO-92 Package (10 sec.) 260°C TO Package (10 sec.) SOIC Package (1) (2) (3) 300°C Vapor Phase (60 sec.) 215°C Infrared (15 sec.) 220°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified operating conditions. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. For elevated temperature operation, Tj max is: LM136 150°C LM236 125°C LM336 100°C Thermal Resistance θja (Junction to Ambient) TO-92 TO SOIC 180°C/W (0.4″ leads) 440°C/W 165°C/W 80°C/W n/a 170°C/W (0.125″ lead) θja (Junction to Case) n/a Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N 3 LM136-2.5-N SNVS749F – MAY 1998 – REVISED APRIL 2013 Electrical Characteristics www.ti.com (1) Parameter Conditions Reverse TA=25°C, IR=1 mA Breakdown Voltage LM136A-2.5-N/ LM236A-2.5-N LM136-2.5-N/ LM236-2.5-N LM336B-2.5-N LM336-2.5-N Units Min Typ Max Min Typ Max LM136, LM236, LM336 2.440 2.490 2.540 2.390 2.490 2.590 V LM136A, LM236A, LM336B 2.465 2.490 2.515 2.440 2.490 2.540 V Reverse Breakdown Change With Current TA=25°C, 400 μA≤IR≤10 mA 2.6 6 2.6 10 mV Reverse Dynamic Impedance TA=25°C, IR=1 mA, f = 100 Hz 0.2 0.6 0.2 1 Ω Temperature Stability (2) VR Adjusted to 2.490V IR=1 mAFigure 15 1.8 6 mV Reverse Breakdown Change With Current 400 μA≤IR≤10 mA Reverse Dynamic Impedance IR=1 mA 0°C≤TA≤70°C (LM336) −25°C≤TA≤+85°C (LM236H, LM236Z) 3.5 9 mV −25°C ≤ TA ≤ +85°C (LM236M) 7.5 18 mV −55°C≤TA≤+125°C (LM136) 12 18 3 10 3 12 mV 0.4 1 0.4 1.4 Ω Long Term Stability TA=25°C ±0.1°C, IR=1 mA, t = 1000 hrs (1) (2) 4 20 mV 20 ppm Unless otherwise specified, the LM136-2.5-N is specified from −55°C ≤ TA ≤ +125°C, the LM236-2.5-N from −25°C ≤ TA ≤ +85°C and the LM336-2.5-N from 0°C ≤ TA ≤ +70°C. Temperature stability for the LM336 and LM236 family is specified by design. Design limits are ensured (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum change in Vref from 25°C to TA (min) or TA (max). Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N LM136-2.5-N www.ti.com SNVS749F – MAY 1998 – REVISED APRIL 2013 Typical Performance Characteristics Reverse Voltage Change Zener Noise Voltage Figure 7. Figure 8. Dynamic Impedance Response Time Figure 9. Figure 10. Reverse Characteristics Forward Characteristics Figure 11. Figure 12. Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N 5 LM136-2.5-N SNVS749F – MAY 1998 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) Temperature Drift Figure 13. APPLICATION HINTS The LM136 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance. Figure 14 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment potentiometer as shown in Figure 15. When the device is adjusted to 2.490V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1 is not critical and any value from 2k to 20k will work. Figure 14. LM136 With Pot for Adjustment of Breakdown Voltage (Trim Range = ±120 mV typical) 6 Figure 15. Temperature Coefficient Adjustment (Trim Range = ±70 mV typical) Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N LM136-2.5-N www.ti.com SNVS749F – MAY 1998 – REVISED APRIL 2013 * L1 60 turns #16 wire on Arnold Core A-254168-2 Efficiency ≈ 80% † Figure 16. Low Cost 2 Amp Switching Regulator† Figure 17. Precision Power Regulator with Low Temperature Coefficient Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N 7 LM136-2.5-N SNVS749F – MAY 1998 – REVISED APRIL 2013 www.ti.com Figure 18. 5V Crowbar * Does not affect temperature coefficient Figure 19. Trimmed 2.5V Reference with Temperature Coefficient Independent of Breakdown Voltage Figure 20. Adjustable Shunt Regulator 8 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N LM136-2.5-N www.ti.com SNVS749F – MAY 1998 – REVISED APRIL 2013 Figure 21. Linear Ohmmeter Figure 22. Op Amp with Output Clamped Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N 9 LM136-2.5-N SNVS749F – MAY 1998 – REVISED APRIL 2013 www.ti.com Figure 23. Bipolar Output Reference Figure 24. 2.5V Square Wave Calibrator Figure 25. 5V Buffered Reference 10 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N LM136-2.5-N www.ti.com SNVS749F – MAY 1998 – REVISED APRIL 2013 Figure 26. Low Noise Buffered Reference Schematic Diagram Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N 11 LM136-2.5-N SNVS749F – MAY 1998 – REVISED APRIL 2013 www.ti.com REVISION HISTORY Changes from Revision E (April 2013) to Revision F • 12 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 11 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM136-2.5-N PACKAGE OPTION ADDENDUM www.ti.com 17-Dec-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LM136AH-2.5 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -40 to 125 ( LM136AH2.5 ~ LM136AH2.5) LM136AH-2.5/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 125 ( LM136AH2.5 ~ LM136AH2.5) LM136H-2.5 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 ( LM136H2.5 ~ LM136H2.5) LM136H-2.5/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 ( LM136H2.5 ~ LM136H2.5) LM236H-2.5 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -25 to 85 ( LM236H2.5 ~ LM236H2.5) LM236H-2.5/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -25 to 85 ( LM236H2.5 ~ LM236H2.5) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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