FZT849 Green 30V NPN MEDIUM POWER HIGH CURRENT TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 30V IC = 7A High Continuous Collector Current ICM = 20A Peak Pulse Current PD = 3W Power Dissipation Very Low Saturation Voltages Complimentary PNP Type FZT949 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) C B E Top View Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Product FZT849TA Notes: Compliance AEC-Q101 Marking FZT849 Reel size (inches) 7 Tape width (mm) 12mm Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information FZT 849 FZT849 Document number: DS33173 Rev. 4 - 2 YWW SOT223 FZT 849 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com June 2015 © Diodes Incorporated FZT849 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit VCBO 80 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC 7 A ICM 20 A Value 3.0 24 1.6 12.8 42 78 8.8 -55 to +150 Unit Collector-Base Voltage Continuous Collector Current Peak Pulse Current Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance Junction to Lead Operating and Storage Temperature Range Symbol (Note 5) PD (Note 6) (Note 5) (Note 6) (Note 7) RJA RJA RJL TJ, TSTG W mW/°C °C/W °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT849 Document number: DS33173 Rev. 4 - 2 2 of 7 www.diodes.com June 2015 © Diodes Incorporated FZT849 Thermal Characteristics and Derating Information DC 1 1s 100ms 10ms 100m Single Pulse Tamb=25°C 10m 100m 1ms 52mmX52mm Single sided 2oz Cu 100µs 1 10 100 VCE Collector-Emitter Voltage (V) 3.0 Max Power Dissipation (W) IC Collector Current (A) VCE(sat) 10 Limit 2.5 52mmX52mm Single sided 2oz Cu 2.0 1.5 1.0 25mmX25mm Single sided 1oz Cu 0.5 0.0 0 20 D=0.5 20 Single Pulse 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 30 D=0.2 Document number: DS33173 Rev. 4 - 2 100 120 140 160 Single Pulse T amb=25°C 100 Transient Thermal Impedance FZT849 80 Derating Curve 52mmX52mm Single sided 2oz Cu 10 60 Temperature (°C) Safe Operating Area 40 40 52mmX52mm Single sided 2oz Cu 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com June 2015 © Diodes Incorporated FZT849 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 80 120 V IC = 100µA Test Condition Collector-Emitter Breakdown Voltage (Note 9) BVCEO 30 40 V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100µA Collector-Base Cut-Off Current ICBO 50 nA VCB = 70V Collector Cut-Off Current ICES 50 nA VCES = 45V Emitter Cut-Off Current IEBO 10 nA VEB = 6V 35 67 188 50 110 215 350 mV IC = 500mA, IB = 20mA IC = 1A, IB = 20mA IC = 2A, IB = 20mA IC = 6.5A, IB = 300mA Collector-Emitter Saturation Voltage (Note 9) VCE(sat) Base-Emitter Saturation Voltage (Note 9) VBE(sat) 1.2 V IC = 6.5A, IB = 300mA VBE(on) 1.13 V IC = 6.5A, VCE = 1V hFE 100 100 100 30 200 200 150 65 300 IC = 10mA, VCE = 1V IC = 1A, VCE = 1V IC = 7A, VCE = 1V IC = 20A, VCE = 2V fT 100 MHz Cobo 75 pF VCB= 10V, f=1MHz 45 630 ns ns IC= 1A, IB1= 100mA IB2= 100mA, VCC= 10V Base-Emitter Turn-On Voltage (Note 9) DC Current Gain (Note 9) Transitional Frequency Output Capacitance Switching Times Note: ton toff IC = 100mA, VCE = 10V f=50MHz 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FZT849 Document number: DS33173 Rev. 4 - 2 4 of 7 www.diodes.com June 2015 © Diodes Incorporated FZT849 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) FZT849 Document number: DS33173 Rev. 4 - 2 5 of 7 www.diodes.com June 2015 © Diodes Incorporated FZT849 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b A A1 0° -1 0° e SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7° 7° Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X FZT849 Document number: DS33173 Rev. 4 - 2 C 6 of 7 www.diodes.com June 2015 © Diodes Incorporated FZT849 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com FZT849 Document number: DS33173 Rev. 4 - 2 7 of 7 www.diodes.com June 2015 © Diodes Incorporated