CJ4803A SOP8 Plastic-Encapsulate MOSFETS CJ4803A Dual P-Channel 30-V(D-S) MOSFET SOP8 DESCRIPTION The CJ4803A uses advanced trench technology to provide excellent RDS(on).This device is suitable for use as a load switch or in PWM applications. S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS -30 Gate-source voltage VGS ±20 Continuous drain current ID -5 Pulsed drain current IDM -30 Maximum body- diode continuous current IS -2 Power dissipation PD 0.35 W RθJA 357 ℃/W Junction temperature TJ 150 Storage temperature Tstg -55 ~+150 Thermal resistance from junction to ambient [email protected] www.zpsemi.com V A ℃ 1 of 2 CJ4803A Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =-250µA Gate-source leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =-30V, VGS =0V -1.0 µA Gate-source threshold voltage VGS(th) -2 -2.5 V Drain-source On-State resistance RDS(on) VGS =-10V, ID =-5.0A 37 46 VGS =-4.5V, ID =-4A 60 74 -0.77 -1 VDS =VGS, ID =-250µA Forward diode voltage VSD VGS =0V,IS=-1A Forward transconductance gFS VDS =-5V, ID =-5A -30 -1.5 V 10 mΩ V S DYNAMIC PARAMETERS 830 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 92 td(on) 7.7 VDS =-15V,VGS =0V,f =1MHz 126 pF SWITCHING PARAMETERS Turn-on delay time Rise time Turn-off delay time Fall time [email protected] tr td(off) VGS=-10V,VDS=-15V, 6.8 RL=3Ω,RGEN=3Ω 20 tf ns 10 www.zpsemi.com 2 of 2