Order this document by MGS13002D/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. IGBT 0.5 A @ 25°C 600 V • • • • Built–In Free Wheeling Diodes Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA C E C G G CASE 029–05 STYLE 35 TO–226AE E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGES ± 15 Vdc IC25 IC90 ICM 0.5 0.3 2.0 Adc PD 1.0 Watt TJ, Tstg – 55 to 150 °C RθJC RθJA 25 125 °C/W TL 260 °C Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Energy – Starting @ TC = 125°C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W EAS mJ 125 40 (1) Pulse width is limited by maximum junction temperature repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. REV 2 IGBT Motorola Motorola, Inc. 1998 Device Data 1 MGS13002D ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 600 — 680 0.7 — — Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) V(BR)CES Vdc V/°C µAdc Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C) ICES — — 0.1 5.0 5.0 50 Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc) IGES — 10 100 — — 1.6 1.5 2.0 — 3.5 — — 6.0 6.0 — mV/°C gfe 0.3 0.42 — Mhos Cies — 75 100 pF Coes — 11 20 Cres — 1.6 5.0 — — — — 5.0 5.2 2.3 2.3 6.0 — 3.0 — trr — 150 — ns QRR — 35 — mC (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd Vdc, L = 3 3.0 0 mH, H RG = 25 Ω Ω, TC = 25 25°C, C, dV/dt = 1000 V/ms) Energy losses include “tail” td(off) — 28 — ns tf — 150 — Eoff — 3.25 — mJ (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd Vdc, L = 3 3.0 0 mH, H RG = 25 Ω Ω, TC = 125°C, 125 C, dV/dt = 1000 V/ms) Energy losses include “tail” td(off) — 21 — ns tf — 280 — Eoff — 8.0 — mJ (VCC = 300 Vdc, IC = 0.3 Adc, VGE = 15 Vdc) QT — 6.4 — nC mAdc ON CHARACTERISTICS Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 0.3 Adc) (VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 250 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 20 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 0.3 Adc) (IEC = 0.3 Adc, TC = 125°C) (IEC = 0.1 Adc) (IEC = 0.1 Adc, TC = 125°C) Reverse Recovery Time Reverse Recovery Stored Charge VFEC ((IF = 0.4 Adc,, VR = 300 Vdc,, dIF/dt = 10 A/ms) Vdc SWITCHING CHARACTERISTICS(1) Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–Off Delay Time Fall Time Turn–Off Switching Loss Gate Charge (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGS13002D 2.5 TC = 25°C VGE = 15 V 12.5 V 10 V IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 2.5 2.0 1.5 8.0 V 1.0 0.5 0 2 10 V 2.0 1.5 8.0 V 1.0 0.5 4 3 1 2 3 4 5 Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics 12.5 V VGE = 15 V 10 V 2.0 1.5 8.0 V 1.0 0.5 0 1 2 3 4 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TC = –20°C IC = 700 mA 1.9 500 mA 1.8 300 mA 1.7 1.6 1.5 VG = 15 V 1.4 –25 0 25 50 75 100 125 Figure 3. Saturation Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Case Temperature –20°C 17 25°C 12 7 2 0.5 1.0 1.5 2.0 V FEC , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) TC = 150°C 150 10 IC = 500 mA 8 300 mA 6 4 100 mA 2 0 25 50 75 100 125 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 5. Diode Forward Voltage Drop Figure 6. Diode Forward Voltage versus Case Temperature Motorola IGBT Device Data 6 2.0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 22 0 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 2.5 IC , COLLECTOR CURRENT (AMPS) 12.5 V 0 1 V FEC , EMITTER–TO–COLLECTOR VOLTAGE (VOLTS) VGE = 15 V TC = 150°C 150 3 MGS13002D VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 150 C, CAPACITANCE (pF) TC = 25°C VGE = 0 V 100 Cies Coes 50 Cres 0 5 10 20 15 0 1 2 3 4 6 5 7 Figure 7. Capacitance Variation Figure 8. Gate–To–Emitter Voltage versus Total Charge TJ = 125°C 30 20 25°C 10 0 0 0 Qg, TOTAL GATE CHARGE (nC) L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 40 VCE = 300 V VGE = 15 V IC = 0.3 A TC = 25°C 5 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 50 10 25 Ets , TOTAL SWITCHING ENERGY LOSSES ( m J) Ets , TOTAL SWITCHING ENERGY LOSSES ( m J) 0 15 0.5 1.0 20 15 IC = 0.7 A 10 0.3 A 5 0 2.0 1.5 L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 25 75 50 100 125 IC, COLLECTOR CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 9. Total Switching Losses versus Collector Current Figure 10. Total Switching Losses versus Case Temperature 150 IC , COLLECTOR CURRENT (AMPS) 2.5 2.0 1.5 1.0 TC = 125°C VGE = 15 V RG = 25 W L = 3.0 mH 0.5 0 0 100 200 300 400 500 600 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 11. Minimum Turn–Off Safe Operating Area 4 Motorola IGBT Device Data MGS13002D 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 (RqJC(t)) 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (ms) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 12. Typical Thermal Response Motorola IGBT Device Data 5 MGS13002D PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 SECTION X–X N C N CASE 029–05 TO–226AE ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. 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